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CY7C1141V18, CY7C1156V18
CY7C1143V18, CY7C1145V18

Document Number: 001-06583  Rev. *D

Page 13 of 28

IEEE 1149.1 Serial Boundary Scan (JTAG)

These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8V IO logic levels.

Disabling the JTAG Feature

It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(V

SS

) to prevent clocking of the device. TDI and TMS are inter-

nally pulled up and may be unconnected. They may alternately
be connected to V

DD

 through a pull up resistor. TDO must be left

unconnected. Upon power up, the device comes up in a reset
state which does not interfere with the operation of the device.

Test Access Port—Test Clock

The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.

Test Mode Select

The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to leave
this pin unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.

Test Data-In (TDI)

The TDI pin is used to serially input information into the registers
and connect to the input of any of the registers. The register
between TDI and TDO is chosen by the instruction that is loaded
into the TAP instruction register. For information about loading
the instruction register, see 

“TAP Controller State Diagram” 

on

page 15 TDI is internally pulled up and unconnected if the TAP
is unused in an application. TDI is connected to the most signif-
icant bit (MSb) on any register. 

Test Data-Out (TDO)

The TDO output pin is used to serially clock data-out from the
registers. The output is active depending upon the current state
of the TAP state machine (see 

“Instruction Codes” 

on page 18).

The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSb) of any register.

Performing a TAP Reset

A Reset is performed by forcing TMS HIGH (V

DD

) for five rising

edges of TCK. This RESET does not affect the operation of the
SRAM and may be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high-Z state.

TAP Registers

Registers are connected between the TDI and TDO pins and
enable data to be scanned into and out of the SRAM test circuitry.
Only one register can be selected at a time through the
instruction registers. Data is serially loaded into the TDI pin on
the rising edge of TCK. Data is output on the TDO pin on the
falling edge of TCK. 

Instruction Register

Serially load three-bit instructions into the instruction register.
This register is loaded when it is placed between the TDI and
TDO pins as shown in 

“TAP Controller Block Diagram” 

on

page 16. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as described
in the previous section.

When the TAP controller is in the Capture IR state, the two least
significant bits are loaded with a binary “01” pattern to enable for
fault isolation of the board level serial test path.

Bypass Register

To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables data to be shifted through the SRAM
with minimal delay. The bypass register is set LOW (V

SS

) when

the BYPASS instruction is executed.

Boundary Scan Register

The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices. 

The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. Use the
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions to
capture the contents of the input and output ring.

The 

“Boundary Scan Order” 

on page 19 shows the order in which

the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSb of the register is connected to
TDI, and the LSb is connected to TDO.

Identification (ID) Register

The ID register is loaded with a vendor-specific 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in the 

“Identification Register Definitions”

on page 18

.

TAP Instruction Set

Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the 

“Instruction

Codes” 

on page 18. Three of these instructions are listed as

RESERVED and must not be used. The other five instructions
are described in this section.

Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.

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Summary of Contents for CY7C1141V18

Page 1: ...of two separate ports to access the memory array The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations QDR II ar...

Page 2: ...Reg Reg Reg 16 19 8 32 8 NWS 1 0 VREF Write Add Decode Write Reg 16 A 18 0 19 512K x 8 Array 512K x 8 Array 512K x 8 Array Write Reg Write Reg Write Reg 8 CQ CQ DOFF QVLD 512K x 9 Array CLK A 18 0 Gen...

Page 3: ...Reg 36 18 18 72 18 BWS 1 0 VREF Write Add Decode Write Reg 36 A 17 0 18 256K x 18 Array 256K x 18 Array 256K x 18 Array Write Reg Write Reg Write Reg 18 CQ CQ DOFF QVLD 128K x 36 Array CLK A 16 0 Gen...

Page 4: ...C VSS NC Q2 NC NC NC VREF NC NC VDDQ NC VDDQ NC NC VDDQ VDDQ VDDQ D1 VDDQ NC Q1 NC VDDQ VDDQ NC VSS NC D0 NC TDI TMS VSS A NC A NC D2 NC ZQ NC Q0 NC NC NC NC A NC 144M CY7C1156V18 2M x 9 2 3 4 5 6 7 1...

Page 5: ...5 NC NC VREF NC Q3 VDDQ NC VDDQ NC Q5 VDDQ VDDQ VDDQ D4 VDDQ NC Q4 NC VDDQ VDDQ NC VSS NC D2 NC TDI TMS VSS A NC A D7 D6 NC ZQ D3 Q2 D1 Q1 D0 NC A NC CY7C1145V18 512K x 36 2 3 4 5 6 7 1 A B C D E F G...

Page 6: ...nd write operations Internally the device is organized as 2M x 8 4 arrays each of 512K x 8 for CY7C1141V18 2M x 9 4 arrays each of 512K x 9 for CY7C1156V18 1M x 18 4 arrays each of 256K x 18 for CY7C1...

Page 7: ...m those listed in this data sheet For normal operation connect this pin to a pull up through a 10 K or less pull up resistor The device behaves in QDR I mode when the DLL is turned off In this mode op...

Page 8: ...rising edge of the Positive Input Clock K This enables for a seamless transition between devices without the insertion of wait states in a depth expanded memory Write Operations Write operations are i...

Page 9: ...ks are generated by the QDR II CQ is referenced with respect to K and CQ is refer enced with respect to K These are free running clocks and are synchronized to the input clock of the QDR II The timing...

Page 10: ...R CLKIN CLKIN D A K SRAM 4 RQ 250ohms ZQ CQ CQ Q K RPS WPS BWS D A K SRAM 1 RQ 250ohms ZQ CQ CQ Q K RPS WPS BWS RPS WPS BWS R 50ohms Vt V 2 DDQ R Notes 2 X Don t Care H Logic HIGH L Logic LOW represen...

Page 11: ...CY7C1141V18 only the upper nibble D 7 4 is written into the device D 3 0 remains unaltered CY7C1143V18 only the upper byte D 17 9 is written into the device D 8 0 remains unaltered H L L H During the...

Page 12: ...is written into the device D 8 0 and D 35 18 remains unaltered H L H H L H During the data portion of a write sequence only the byte D 17 9 is written into the device D 8 0 and D 35 18 remains unalter...

Page 13: ...falling edge of TCK Instruction Register Serially load three bit instructions into the instruction register This register is loaded when it is placed between the TDI and TDO pins as shown in TAP Cont...

Page 14: ...oundary scan register After the data is captured it is possible to shift out the data by putting the TAP into the Shift DR state This places the boundary scan register between the TDI and TDO pins PRE...

Page 15: ...gram 11 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR SELECT IR SCAN CAPTURE IR SHIFT IR EXIT1 IR PAUSE IR EXIT2 IR UPDATE IR 1 0 1 1 0 1 0 1...

Page 16: ...ut LOW Voltage IOL 100 A 0 2 V VIH Input HIGH Voltage 0 65 VDD VDD 0 3 V VIL Input LOW Voltage 0 3 0 35 VDD V IX Input and Output Load Current GND VI VDD 5 5 A 0 0 1 2 29 30 31 Boundary Scan Register...

Page 17: ...Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Output Times tTDOV TCK Clock LOW to TDO Valid 10 ns tTDOX TCK Clock LOW to TDO Invalid 0 ns TAP Timing and Test Condition The Tap Tim...

Page 18: ...Instruction Code Description EXTEST 000 Captures the input and output ring contents IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO This operation...

Page 19: ...2K 7 8P 34 11E 61 4B 88 1K 8 9R 35 10E 62 3A 89 2L 9 11P 36 10D 63 1H 90 3L 10 10P 37 9E 64 1A 91 1M 11 10N 38 10C 65 2B 92 1L 12 9P 39 11D 66 3B 93 3N 13 10M 40 9C 67 1C 94 3M 14 11N 41 9D 68 1B 95 1...

Page 20: ...power and clock K K for 2048 cycles to lock the DLL DLL Constraints DLL uses K clock as its synchronizing input The input must have low phase jitter which is specified as tKC Var The DLL functions at...

Page 21: ...l Impedance VDDQ 0 2 VDDQ V VOL LOW Output LOW Voltage IOL 0 1 mA Nominal Impedance VSS 0 2 V VIH Input HIGH Voltage VREF 0 1 VDDQ 0 15 V VIL Input LOW Voltage 0 15 VREF 0 1 V IX Input Leakage Current...

Page 22: ...ient Test conditions follow standard test methods and procedures for measuring thermal impedance in accordance with EIA JESD51 13 48 C W JC Thermal Resistance junction to case 4 15 C W AC Test Loads a...

Page 23: ...0 2 0 2 0 2 ns tCQDOH tCQHQX Echo Clock High to Data Invalid 0 2 0 2 0 2 ns tCQH tCQHCQL Output Clock CQ CQ HIGH 25 0 88 1 03 1 15 ns tCQHCQH tCQHCQH CQ Clock Rise to CQ Clock Rise 25 rising edge to...

Page 24: ...D A WPS RPS K K DON T CARE UNDEFINED CQ CQ tCQOH CCQO t tCQOH CCQO t tQVLD QVLD tQVLD Read Latency 2 0 Cycles CLZ t t CO tDOH tCQDOH CQD t tCHZ Q00 Q01 Q20 Q02 Q21 Q03 Q22 Q23 tCQH tCQHCQH Q Notes 30...

Page 25: ...Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Industrial CY7C1156V18 375BZI CY7C1143V18 375BZI CY7C1145V18 375BZI CY7C1141V18 375BZXI 51 85180 165 Ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Pb Fr...

Page 26: ...18 300BZXC CY7C1141V18 300BZI 51 85180 165 Ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Industrial CY7C1156V18 300BZI CY7C1143V18 300BZI CY7C1145V18 300BZI CY7C1141V18 300BZXI 51 85180 165 Ball Fi...

Page 27: ...5 M C B A 0 15 4X 0 35 0 06 SEATING PLANE 0 53 0 05 0 25 C 0 15 C PIN 1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 5 6 7 8 9 10 10 00 14 00 B C D E F G H J K L M N 11 11 10 9 8 6 7 5 4 3 2 1 P R P R K M N L J...

Page 28: ...LIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE Cypress reserves the right to make changes without further notice to the materials described herein Cypress does not assume any...

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