Cypress Semiconductor CY25822-2, Specification Sheet

Page: 6 / 9

CY25822-2
Document #: 38-07531 Rev. ** Page 6 of 9
Table 5. Absolute Maximum Ratings
Parameter Description Condition Min. Max. Unit
V
DD
Core Supply Voltage –0.5 4.6 V
V
DD_A
Analog Supply Voltage –0.5 4.6 V
V
IN
Input Voltage Relative to V
SS
–0.5 V
DD
+ 0.5 VDC
T
S
Temperature, Storage Non Functional –65 +150 °C
T
A
Temperature, Operating Ambient Functional 0 70 °C
T
J
Temperature, Junction Functional – 150 °C
ESD
HBM
ESD Protection (Human Body Model) MIL-STD-883, Method 3015 2000 – Volts
UL–94 Flammability Rating @1/8 in. V–0
MSL Moisture Sensitivity Level 1
Table 6. DC Parameters (T
A
= 0°C to +70°C, V
DD
= 3.3V ± 5%)
Parameter Description Condition Min. Max Unit Notes
V
DD
Supply Voltage – 3.135 3.465 V V
DD
= 3.3 ± 5%
V
IH
Input High Voltage – 2.0 V
DD
+ 0.3 V
V
IL
Input Low Voltage – V
SS
– 0.3 0.8 V
I
IL1
Input Leakage Current SCLOCK
or SDATA
–25 +25
µ
A
I
IL2
Input Leakage Current PWRDWN# –75 –15
µ
A
V
OH
Output High Voltage I
OH
= –4 mA 2.4 – V Single edge is required to
be monotonic when transi-
tioning through this region.
V
OL
Output Low Voltage I
OL
= 4 mA – 0.4 V Single edge is required to
be monotonic when transi-
tioning through this region.
C
IN
Input Pin Capacitance – – 5 pF
C
OUT
Output Pin Capacitance – – 6 pF
L
IN
Pin Inductance – – 7 nH
T
A
Ambient Temperature – 0 70 °C No air flow
I
DD1
Supply Current @ 66 MHz – 50 mA
I
DD2
Supply Current @ 48 MHz – 40 mA
I
PD
Power Down Supply Current – – 500
µ
A
Table 7. AC Parameters (T
A
= 0°C to +70°C, V
DD
= 3.3V ± 5%)
Parameter Description Conditions Min. Max. Unit Notes
t
HIGH
CLK High Time, 48MHz Measured @2.4V 9.45 10.95 ns Specification applies to
48MHz output mode.
t
LOW
CLK, Low Time, 48MHz Measured @0.4V 8.50 10.10 ns Specification applies to
48MHz output mode.
t
HIGH
CLK High Time, 66MHz Measured @2.4V 6.85 7.90 ns Specification applies to
66.7MHz output mode.
t
LOW
CLK Low Time, 66MHz Measured @0.4V 5.95 6.95 ns Specification applies to
66.7MHz output mode.
t
RISEH1
Rising Edge Rate Measured from 0.4V to 2.4V
REFOUT and CLOCKOUT 2.0 5.0 V/ns High Buffer Strength
Refer to I
2
C Control
t
FALLH1
Falling Edge Rate Measured from 2.4V to 0.4V
REFOUT and CLOCKOUT 2.0 5.0 V/ns High Buffer Strength
Refer to I
2
C Control
t
RISEL1
Rising Edge Rate Measured from 0.4V to 2.4V
REFOUT and CLOCKOUT 1.33 4.0 V/ns Low Buffer Strength
Refer to I
2
C Control
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