5
5
.
.
4
4
D
D
C
C
E
E
l
l
e
e
c
c
t
t
r
r
i
i
c
c
a
a
l
l
C
C
h
h
a
a
r
r
a
a
c
c
t
t
e
e
r
r
i
i
s
s
t
t
i
i
c
c
s
s
o
o
f
f
3
3
.
.
3
3
V
V
I
I
/
/
O
O
C
C
e
e
l
l
l
l
s
s
Table 5.4 DC Electrical Characteristics of 3.3V I/O Cells
Limits
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V
DDH
Power supply
3.3V I/O
3.0
3.3
3.6
V
V
il
Input low voltage
0.8
V
V
ih
Input high voltage
LVTTL
2.0
V
V
ol
Output low voltage
∣
I
ol
∣
=2~16mA
0.4
V
V
oh
Output high voltage
∣
I
oh
∣
=2~16mA
2.4
V
R
pu
Input pull-up resistance
PU=high, PD=low
55
75
110
K
Ω
R
pd
Input pull-down resistance
PU=low, PD=high
40
75
150
K
Ω
I
in
Input leakage current
V
in
= V
DDH
or 0
-10
±
1
10
μ
A
I
oz
Tri-state output leakage
current
-10
±
1
10
μ
A
5
5
.
.
5
5
U
U
S
S
B
B
T
T
r
r
a
a
n
n
s
s
c
c
e
e
i
i
v
v
e
e
r
r
C
C
h
h
a
a
r
r
a
a
c
c
t
t
e
e
r
r
i
i
s
s
t
t
i
i
c
c
s
s
Table 5.5 Electrical characteristics
Symbol
Parameter
Conditions
Min.
Typ. Max. Unit
VD33P
Analog supply Voltage
3.0
3.3
3.6
V
VDD
V18
Digital supply Voltage
1.62
1.8
1.98
V
I
CC
Operating supply current
High speed operating
at 480 MHz
55
mA
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