3
VX-8R/E and VX-8DR/E Technical Supplement
Specifications
T
RANSMITTER
RF Power Output
:
50/144/430 MHz
1.0 W (@4.5 V: AA x 3)
5.0 W (@7.4 V or EXT DC)
50 MHz AM
1.0 W (Fixed)
222 MHz (USA only) 0.5 W (@4.5 V: AA x 3)
1.5 W (@7.4 V or EXT DC)
L3: 2.5 W, L2: 1 W, L1: 0.05 W (0.2 W*) (@7.4 V, 50/144/430 MHz)
L3: 1 W, L2: 0.5 W, L1: 0.05 W (@7.4 V, 222 MHz)
Modulation Type
:
F2E, F3E: Variable Reactance
A3E: Low Level Amplitude Modulation (50 MHz only)
Maximum Deviation
:
±5 kHz (F2E/F3E)
Spurious Emission
:
At least 60 dB below (@ TX power HI/L3)
At least 50 dB below (@ TX power L2/L1)
Microphone Impedance
:2k Ohms
R
ECEIVER
Circuit Type
:
NFM, AM:
Double-Conversion Superheterodyne
WFM:
Triple-Conversion Superheterodyne
AM/FM Radio: Single-Conversion Superheterodyne
IF
:
NFM, AM
1st: 47.25 MHz (A (Main) Band),
46.35 MHz (B (Sub) Band),
2nd: 450 kHz
WFM
1st: 45.8 MHz, 2nd: 10.7 MHz, 3rd: 1 MHz
AM/FM Radio: 130 kHz
Sensitivity
:
3.0 µV for 10 dB S/N (0.5-30 MHz @AM)
(A (Main) Band)
0.35 µV (TYP) for 12 dB SINAD (30-54 MHz @NFM)
1.0 µV (TYP) for 12 dB SINAD (54-76 MHz @NFM)
1.0 µV (TYP) for 12 dB SINAD (54-59 MHz @NFM, USA Version)
0.5 µV (TYP) for 12 dB SINAD (76-88 MHz @NFM)*
1.5 µV (TYP) for 12 dB SINAD (76-108 MHz @WFM)
1.5 µV (TYP) for 12 dB SINAD (88-108 MHz @WFM)*
1.5 µV (TYP) for 12 dB SINAD (59-108 MHz @WFM, USA Version)
1.5 µV (TYP) for 10 dB SN (108-137 MHz @AM)
0.2 µV for 12 dB SINAD (137-140 MHz @NFM)
0.16 µV for 12 dB SINAD (140-150 MHz @NFM)
0.2 µV for 12 dB SINAD (150-174 MHz @NFM)
1.0 µV for 12 dB SINAD (174-222 MHz @WFM)
0.5 µV for 12 dB SINAD (300-350 MHz @NFM)
0.2 µV for 12 dB SINAD (350-400 MHz @NFM)
0.18 µV for 12 dB SINAD (400-470 MHz @NFM)
1.5 µV for 12 dB SINAD (470-540 MHz @WFM)
3.0 µV (TYP) for 12 dB SINAD (540-800 MHz @WFM)
1.5 µV (TYP) for 12 dB SINAD (800-999.90 MHz @NFM) (Cellular Blocked)
Sensitivity
:
0.18 µV(TYP) for 12 dB SINAD (50-54 MHz @NFM)
(B (Sub) Band)
0.18 µV for 12 dB SINAD (144-148 MHz @NFM)
0.2 µV for 12 dB SINAD (430-450 MHz @NFM)
Selectivity
:
12 kHz/35 kHz (–6dB/–60dB: NFM, AM)
200 kHz/300 kHz (–6dB/–20dB: WFM)
AF Output
:
200 mW @ 8 Ohms for 10 % THD (@ 7.4 V DC)
400 mW @ 8 Ohms for 10 % THD (@ 13.8 V DC)
Specifications are subject to change without notice, and are guaranteed within the 50/144/(222)/430 MHz amateur bands only.
Cellular Blocked per FCC rule Part 15.121, may not receive 900 MHz Amateur band.
The frequency ranges are different according to a transceiver version.
*: VX-8E and VX-8DE Type
Содержание VX-8DR/E
Страница 5: ...5 VX 8R E and VX 8DR E Technical Supplement Block Diagram ...
Страница 6: ...6 VX 8R E and VX 8DR E Technical Supplement Block Diagram Note ...
Страница 25: ...25 RF Unit Lot 1 4 VX 8R E Technical Supplement Circuit Diagram ...
Страница 27: ...27 RF Unit Lot 5 7 VX 8R E Technical Supplement Circuit Diagram ...
Страница 47: ...47 RF 2 Unit Lot 8 15 VX 8R E Technical Supplement Circuit Diagram ...
Страница 49: ...49 RF 2 Unit Lot 16 VX 8R E Technical Supplement Circuit Diagram ...
Страница 51: ...51 RF 2 Unit Lot 24 VX 8R E and VX 8DR Technical Supplement Circuit Diagram ...
Страница 73: ...73 CNTL Unit Lot 1 4 VX 8R E Technical Supplement Circuit Diagram ...
Страница 75: ...75 CNTL Unit Lot 5 7 VX 8R E Technical Supplement Circuit Diagram ...
Страница 87: ...87 CNTL 2 Unit Lot 8 15 VX 8R E Technical Supplement Circuit Diagram ...
Страница 89: ...89 CNTL 2 Unit Lot 16 VX 8R E Technical Supplement Circuit Diagram ...
Страница 91: ...91 CNTL 2 Unit Lot 24 VX 8R E and VX 8DR Technical Supplement Circuit Diagram ...
Страница 104: ...104 VX 8R E Technical Supplement Note CONNECTOR Unit Lot 1 7 ...
Страница 106: ...106 VX 8R E and VX 8DR E Technical Supplement Note CONNECTOR 2 Unit Lot 8 ...
Страница 108: ...108 VX 8R E and VX 8DR E Technical Supplement Note MAIN VCO Unit ...
Страница 112: ...112 VX 8R E and VX 8DR E Technical Supplement Note MAIN VCO Unit ...
Страница 114: ...114 VX 8R E and VX 8DR E Technical Supplement Note SUB VCO Unit ...
Страница 117: ...117 VX 8R E and VX 8DR E Technical Supplement ...