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SARA-R4/N4 series - System Integration Manual

UBX-16029218 - R11

Design-in

Page 61 of 157

10 nF Capacitor Ceramic X7R 16 V

GRM155R71C103KA01 - Murata

68 pF Capacitor Ceramic C0G 0402 5% 50 V

GRM1555C1E680JA01 - Murata

15 pF Capacitor Ceramic C0G 0402 5% 50 V

GRM1555C1E150JA01 - Murata

9.1 k



Resistor 0402 5% 0.1 W

Generic manufacturer

3.9 k



Resistor 0402 5% 0.1 W

Generic manufacturer

LDO Linear Regulator ADJ 3.0 A

LT1764AEQ#PBF - Linear Technology

Table 12: Suggested components for high reliability VCC circuit for SARA-R4/N4 series modules, using an LDO regulator

☞

See the section

2.2.1.10

, and in particular

Figure 27

Table 19

, for the parts recommended to be

provided if the application device integrates an internal antenna.

Figure 20

and the components listed in

Table 13

show an example of a high reliability power supply circuit

for SARA-R404M, SARA-R410M and SARA-N410 modules, which do not support the 2G radio access
technology, where the module

VCC

is supplied by an LDO linear regulator capable of delivering maximum

peak / pulse current specified for LTE use-case, with suitable power handling capability.

It is recommended to configure the LDO linear regulator to generate a voltage supply value slightly below
the maximum limit of the module

VCC

normal operating range (e.g. ~4.1 V for the

VCC

, as in the circuits

described in

Figure 20

and

Table 13

). This reduces the power on the linear regulator and improves the

thermal design of the circuit.

OUT

ADJ

GND

SARA-R4 0 4 M

SARA-R4 10 M

SARA-N410

VCC

GND

Figure 20: Example of high reliability VCC supply circuit for SARA-R404M /-R410M /-N410, using an LDO linear regulator

Reference

Description

Part Number - Manufacturer

F Capacitor Ceramic X5R 6.3 V

Generic manufacturer

F Capacitor Ceramic X5R 25 V

Generic manufacturer

100 nF Capacitor Ceramic X7R 16 V

GRM155R71C104KA01 - Murata

10 nF Capacitor Ceramic X7R 16 V

GRM155R71C103KA01 - Murata

68 pF Capacitor Ceramic C0G 0402 5% 50 V

GRM1555C1E680JA01 - Murata

15 pF Capacitor Ceramic C0G 0402 5% 50 V

GRM1555C1E150JA01 - Murata

47 k



Resistor 0.1 W

Generic manufacturer

41 k



Resistor 0.1 W

Generic manufacturer

10 k



Resistor 0.1 W

Generic manufacturer

Содержание SARA-N4 Series

Страница 1: ...ribes the features and the integration of the size optimized SARA R4 N4 series cellular modules These modules are a complete cost efficient performance optimized multi mode and multi band LTE Cat M1 N...

Страница 2: ...SARA R404M SARA R404M 00B 00 K0 0 00 00 07 06 UBX 17047084 End of Life SARA R404M 00B 01 K0 0 00 00 07 08 UBX 18053670 Initial Production SARA R410M SARA R410M 01B 00 L0 0 00 00 02 03 UBX 17051617 In...

Страница 3: ...function interfaces 30 1 6 1 Module power on 30 1 6 2 Module power off 31 1 6 3 Module reset 33 1 7 Antenna interface 35 1 7 1 Antenna RF interface ANT 35 1 7 2 Antenna detection interface ANT_DET 36...

Страница 4: ...aces supply output V_INT 75 2 3 System functions interfaces 76 2 3 1 Module power on PWR_ON 76 2 3 2 Module reset RESET_N 78 2 4 Antenna interface 79 2 4 1 Antenna RF interface ANT 79 2 4 2 Antenna de...

Страница 5: ...ntenna checklist 119 3 Handling and soldering 120 3 1 Packaging shipping storage and moisture preconditioning 120 3 2 Handling 120 3 3 Soldering 122 3 3 1 Soldering paste 122 3 3 2 Reflow soldering 12...

Страница 6: ...ean Conformance CE mark 136 4 5 Taiwanese National Communication Commission 137 5 Product testing 138 5 1 u blox in series production test 138 5 2 Test parameters for OEM manufacturers 139 5 2 1 Go No...

Страница 7: ...s connected health smart metering smart cities and wearables The modules support handover capability and delivers the technology necessary for use in applications such as vehicle asset and people trac...

Страница 8: ...TE Cat M1 NB1 module mainly designed for operation in LTE bands 2 3 4 5 8 12 13 20 28 SARA R410M 52B LTE Cat M1 module mainly designed for operation in LTE bands 2 4 5 12 13 SARA R412M 02B LTE Cat M1...

Страница 9: ...900 MHz Band 12 700 MHz Band 28 700 MHz Band 13 750 MHz Band 20 800 MHz Band 5 850 MHz Band 8 900 MHz Band 4 1700 MHz Band 3 1800 MHz Band 2 1900 MHz LTE TDD bands Band 39 1900 MHz 3 4 2G bands GSM 85...

Страница 10: ...DL LTE category M1 up to 375 kb s UL up to 300 kb s DL LTE category NB1 up to 62 5 kb s UL up to 27 2 kb s DL GPRS multi slot class 336 Up to 85 6 kb s UL Up to 107 kb s DL EGPRS multi slot class 336...

Страница 11: ...mplified block diagram SARA R404M 00B and SARA R410M 01B modules i e the 00 and 01 product versions of the SARA R4 N4 series modules do not support the following interfaces which should be left unconn...

Страница 12: ...or diagnostic access is recommended See section 1 5 2 for functional description See section 2 2 2 for external circuit design in System PWR_ON 15 I Power on input Internal 200 k pull up resistor Test...

Страница 13: ...section 1 9 1 for functional description See section 2 6 1 for external circuit design in CTS 11 O UART clear to send output 1 8 V output Circuit 106 CTS in ITU T V 24 Not supported by 00 01 and R410...

Страница 14: ...nominal common mode impedance ZCM Pull up or pull down resistors and external series resistors as required by the USB 2 0 specifications 4 are part of the USB pin driver and need not be provided exte...

Страница 15: ...See section 2 6 4 for external circuit design in DDC SCL 27 O I2C bus clock line 1 8 V open drain for communication with I2C slave devices Internal pull up to V_INT external pull up is not required No...

Страница 16: ...xternal circuit design in GPIO3 24 I O GPIO 1 8 V GPIO with alternatively configurable functions See section 1 11 for functional description See section 2 8 for external circuit design in GPIO4 25 I O...

Страница 17: ...l oscillator Connected Mode RF Tx Rx data connection enabled and processor core runs with 19 2 MHz reference Table 4 SARA R4 N4 series modules operating modes definition Mode Description Transition be...

Страница 18: ...itches on to the active mode upon expiration of Periodic Update Timer according to the Power Saving Mode defined in 3GPP Rel 13 see 1 13 9 and the SARA R4 N4 series AT Commands Manual 2 AT CPSMS comma...

Страница 19: ...om active to low power deep sleep mode whenever possible if power saving is enabled see 1 13 9 The module switches from active to connected mode when a RF Tx Rx data connection is initiated or when RF...

Страница 20: ...at ion of t he Periodic Updat e Timer Using PWR_ON pin Incoming out going dat a or ot her dedicat ed device net work communicat ion No RF Tx Rx in progress Communicat ion dropped Remove VCC Swit ch ON...

Страница 21: ...ly inputs over the three VCC pins VCC pins 52 and 53 represent the supply input for the internal RF power amplifier demanding most of the total current drawn of the module when RF transmission is enab...

Страница 22: ...limit Operation above VCC extended operating range is not recommended and may affect device reliability VCC average current Support with adequate margin the highest averaged VCC current consumption va...

Страница 23: ...SARA R4 N4 series System Integration Manual UBX 16029218 R11 System description Page 23 of 157 Table 6 Summary of VCC modules supply requirements...

Страница 24: ...t 1 Time ms Current mA 0 300 200 100 500 400 Current consumption value depends on TX power and act ual ant enna load 1Slot 1Resource Block 0 5 ms 1LTE Radio Frame 10 ms 1Slot 1Resource Block 0 5 ms 1L...

Страница 25: ...MON slot unused slot GSM frame 4 615 ms 1frame 8 slot s Current A 200 mA 60 120 mA 1900 mA Peak current depends on TX power and act ual ant enna load GSM frame 4 615 ms 1frame 8 slot s 1 5 1 0 0 5 0...

Страница 26: ...X slot TX slot MON slot unused slot GSM frame 4 615 ms 1frame 8 slot s Current A 60 120mA GSM frame 4 615 ms 1frame 8 slot s 1 5 1 0 0 5 0 0 60 120mA 10 40mA 200mA Peak current depends on TX power and...

Страница 27: ...rs the low power mode whenever possible but it must periodically monitor the paging channel of the current base station paging block reception in accordance to the 2G LTE system requirements even if c...

Страница 28: ...ver possible Figure 8 illustrates a typical example of the module current consumption profile when the module is in active mode In such case the module is registered with the network and while active...

Страница 29: ...ption Page 29 of 157 The typical operating voltage is 1 8 V whereas the current capability is specified in the SARA R4 N4 series Data Sheet 1 The V_INT voltage domain can be used in place of an extern...

Страница 30: ...ow for a valid time All the generic digital pins are tri stated until the switch on of their supply source V_INT The internal reset signal is held low the baseband core and all digital pins are held i...

Страница 31: ...e storage of the current parameter settings in the non volatile memory of the module and a clean network detach procedure An abrupt under voltage shutdown occurs on SARA R4 N4 series modules when the...

Страница 32: ...le replies OK on the AT interface the switch off routine is in progress At the end of the switch off routine all the digital pins are tri stated and all the internal voltage regulators are turned off...

Страница 33: ...ies modules when a low level is applied on RESET_N input pin for a valid time period In this case the current parameter settings are not saved in the module s non volatile memory and a clean network d...

Страница 34: ...SARA R4 N4 series System Integration Manual UBX 16029218 R11 System description Page 34 of 157 18 RESET_N SARA R4 N4 Power Management Unit Reset Shut down 1 8V Figure 12 RESET_N input description...

Страница 35: ...dance of the antenna RF connection must match the 50 impedance of the ANT port Frequency Range See the SARA R4 N4 series Data Sheet 1 The required frequency range of the antenna connected to ANT port...

Страница 36: ...ted if the application requires it The antenna detection is forced by the UANTR AT command See the SARA R4 N4 series AT Commands Manual 2 for more details on this feature The ANT_DET pin generates a D...

Страница 37: ...xternal interrupt to detect the SIM card mechanical physical presence The pin is configured as input with an internal active pull down enabled and it can sense SIM card presence only if cleanly connec...

Страница 38: ...s See section 1 9 5 1 9 1 UART interface 1 9 1 1 UART features The UART interface is a 9 wire 1 8 V unbalanced asynchronous serial interface available on all the SARA R4 N4 series modules supporting A...

Страница 39: ...rrently used for this purpose the module waits for AT command instructions and interprets all the characters received as commands to execute All the functionalities supported by SARA R4 N4 series modu...

Страница 40: ...cessor DTE and allows a number of simultaneous sessions over the used physical link UART The following virtual channels are defined Channel 0 for Multiplexer control Channel 1 for all AT commands and...

Страница 41: ...alid USB VBUS supply voltage 5 0 V typical is applied at the VUSB_DET input of the module since the switch on of the module and then held during normal operations In this case the UART will be not ava...

Страница 42: ...odules include a 4 bit Secure Digital Input Output interface SDIO_D0 SDIO_D1 SDIO_D2 SDIO_D3 SDIO_CLK and SDIO_CMD designed to communicate with external compatible SDIO devices 1 9 5 DDC I2 C interfac...

Страница 43: ...rer for providing audio services SARA R4 N4 series modules include an I2 S digital audio interface to transfer digital audio data to from an external compatible audio device The digital audio interfac...

Страница 44: ...detection SIM card physical presence detection GPIO5 Module status indication Module switched off or in PSM low power deep sleep mode versus active or connected mode GPIO1 GPIO2 GPIO3 GPIO4 GPIO5 GPI...

Страница 45: ...a detection interface functional description and see section 2 4 2 for detection circuit on application board and diagnostic circuit on antenna assembly design in guidelines 1 13 3 Dual stack IPv4 IPv...

Страница 46: ...For more details see the SARA R4 N4 series AT Commands Manual 2 1 13 7 Firmware update Over AT FOAT This feature allows upgrading of the module firmware over the AT interface using AT commands The UF...

Страница 47: ...oid voltage translators which helps to minimize current leakage If the USB interface is implemented in the design remove the external USB VBUS voltage from the VUSB_DET input when serial communication...

Страница 48: ...any active operation during this time the module is in Active mode The Periodic Update Timer is the Extended Tracking Area Update TAU used by the SARA R4 N4 series module to periodically notify the ne...

Страница 49: ...mmands The module uses the CPSMS AT command with its defined parameters to request PSM timers to the network See the SARA R4 N4 series AT Commands Manual 2 for details of the CPSMS operation and featu...

Страница 50: ...e to transition from PSM low power deep sleep mode to Active mode by using the Power Up procedure specified in section 1 6 1 Be aware that when the host application transitions from low power deep sle...

Страница 51: ...d certification schemes as well as the antenna circuit design Very carefully follow the suggestions provided in the relative section 2 2 1 for the schematic and layout design 3 USB interface USB_D USB...

Страница 52: ...rate design is required to guarantee correct functionality Follow the suggestions provided in the corresponding section 2 2 2 for the schematic and layout design It is recommended to follow the specif...

Страница 53: ...ypes which most common ones are the following Switching regulator Low Drop Out LDO linear regulator Rechargeable Lithium ion Li Ion or Lithium ion polymer Li Pol battery Primary disposable battery Mai...

Страница 54: ...s possible supply source then a suitable charger regulator with integrated power path management function can be selected to supply the module while simultaneously and independently charging the batte...

Страница 55: ...on VCC voltage profile Switching regulators can be used that are able to switch between low ripple PWM mode and high ripple PFM mode provided that the mode transition occurs when the module changes st...

Страница 56: ...5 A 2 4 MHz LT3972IMSE PBF Linear Technology Table 9 Components for high reliability VCC supply circuit for SARA R4 N4 series modules using a step down regulator See the section 2 2 1 10 and in parti...

Страница 57: ...Capacitor Ceramic C0G 0402 5 50 V GRM1555C1E680JA01 Murata C9 15 pF Capacitor Ceramic C0G 0402 5 50 V GRM1555C1E150JA01 Murata D1 Schottky Diode 30 V 2 A MBR230LSFT1G ON Semiconductor L1 4 7 H Induct...

Страница 58: ...02 10 50 V Generic manufacturer C5 56 pF Capacitor Ceramic C0G 0402 5 50 V Generic manufacturer C6 100 F Capacitor Tantalum B_SIZE 20 6 3V 15m T520B107M006ATE015 Kemet C7 100 nF Capacitor Ceramic X7R...

Страница 59: ...SARA R4 N4 series System Integration Manual UBX 16029218 R11 Design in Page 59 of 157...

Страница 60: ...regulator Figure 19 and the components listed in Table 12 show an example of a high reliability power supply circuit for the SARA R412M modules supporting the 2G radio access technology This example i...

Страница 61: ...ing maximum peak pulse current specified for LTE use case with suitable power handling capability It is recommended to configure the LDO linear regulator to generate a voltage supply value slightly be...

Страница 62: ...mum limit of the module VCC normal operating range e g 4 1 V as in the circuit described in Figure 21 and Table 14 This reduces the power on the linear regulator and improves the whole thermal design...

Страница 63: ...m Integration Manual UBX 16029218 R11 Design in Page 63 of 157 See the section 2 2 1 10 and in particular Figure 27 Table 19 for the parts recommended to be provided if the application device integrat...

Страница 64: ...ble battery with its related output circuit connected to the VCC pins must be capable of delivering the maximum current consumption occurring during a transmission at maximum Tx power as specified in...

Страница 65: ...B Supply U1 PG STAT2 STA1 VDD C1 5V0 THERM Vss Vbat Li Ion Li Pol Bat t ery Pack D1 B1 C2 Li Ion Li Polymer Bat t ery Charger IC D2 PROG R1 C4 Figure 22 Li Ion or Li Polymer battery charging applicati...

Страница 66: ...wer management IC should meet the following prerequisites to comply with the module VCC requirements summarized in Table 6 High efficiency internal step down converter with characteristics as indicate...

Страница 67: ...when the battery is deeply discharged the battery is charged with a low current set to 10 of the fast charge current Fast charge constant current the battery is charged with the maximum current confi...

Страница 68: ...alum D_SIZE 6 3 V 45 m T520D337M006ATE045 KEMET C7 C12 68 pF Capacitor Ceramic C0G 0402 5 50 V GRM1555C1H680JA01 Murata C8 C13 15 pF Capacitor Ceramic C0G 0402 5 25 V GRM1555C1E150JA01 Murata C11 10 n...

Страница 69: ...VCC 53 VCC 51 VCC Li Ion Li Pol Bat t ery C6 SW VIN SHDNn GND FB C7 R1 R2 L1 U1 St ep up Regulat or D1 C8 Figure 25 VCC circuit example with separate supply for SARA R412M modules Reference Descripti...

Страница 70: ...m Integration Manual UBX 16029218 R11 Design in Page 70 of 157 See the section 2 2 1 10 and in particular Figure 27 Table 19 for the parts recommended to be provided if the application device integrat...

Страница 71: ...less than 1 A to minimize the current consumption Very low RDS ON series resistance for example less than 50 m to minimize voltage drops Adequate maximum Drain current see the SARA R4 N4 series Data...

Страница 72: ...rformance especially if the application device integrates an internal antenna place the following bypass capacitors near the VCC pins 68 pF capacitor with Self Resonant Frequency in the 800 900 MHz ra...

Страница 73: ...rt depends on the specific design but it is recommended to provide all the parts described in Figure 27 Table 19 if the application device integrates an internal antenna ESD sensitivity rating of the...

Страница 74: ...t the highest operating frequency for the switcher and add a large L C filter before connecting to the SARA R4 N4 series modules in the worst case Shielding of switching DC DC converter circuit or at...

Страница 75: ...e V_INT generic digital interfaces 1 8 V supply output which can be mainly used to Indicate when the module is switched on and it is not in the deep sleep power saving mode as described in sections 1...

Страница 76: ...le on the application board e g if an accessible push button is directly connected to PWR_ON pin and it can be achieved by mounting an ESD protection e g EPCOS CA05P4S14THSG varistor close to the acce...

Страница 77: ...wer on circuit PWR_ON requires careful layout since it is the sensitive input available to switch on and switch off the SARA R4 N4 series modules It is required to ensure that the voltage level is wel...

Страница 78: ...s suitable to drive the RESET_N input from an application processor as described in Figure 30 RESET_N input pin should not be driven high by an external device as it may cause start up issues SARA R4...

Страница 79: ...n the operating bands o RF cables should be carefully selected to have minimum insertion losses Additional insertion loss will be introduced by low quality or long cable Large insertion loss reduces b...

Страница 80: ...Select an antenna providing optimal efficiency figure over all the operating frequencies Select an antenna providing appropriate gain figure i e combined antenna directivity and efficiency figure so t...

Страница 81: ...strip separated from a ground plane by a dielectric material or a strip line consists of a flat strip of metal which is sandwiched between two parallel ground planes within a dielectric material The...

Страница 82: ...g 270 m in Figure 32 1510 m in Figure 33 the dielectric constant of the dielectric material e g dielectric constant of the FR 4 dielectric material in Figure 32 and Figure 33 the gap from the transmis...

Страница 83: ...lementation detailed in section 2 4 2 In the first example shown on the left the ANT pin is directly connected to an SMA connector by means of a suitable 50 transmission line designed with the appropr...

Страница 84: ...acturer providing the best possible return loss or VSWR Provide a ground plane large enough according to the relative integrated antenna requirements The ground plane of the application PCB can be red...

Страница 85: ...SARA R4 N4 series System Integration Manual UBX 16029218 R11 Design in Page 85 of 157...

Страница 86: ...MHz 2490 2690 MHz 35 0 x 8 5 x 3 2 mm Ethertronics P822601 GSM WCDMA LTE SMD Antenna 698 960 MHz 1710 2170 MHz 2490 2700 MHz 50 0 x 8 0 x 3 2 mm Ethertronics P822602 GSM WCDMA LTE SMD Antenna 698 960...

Страница 87: ...flexible PCB with cable and U FL 698 960 MHz 1710 2700 MHz 140 0 x 75 0 mm EAD FSQS35241 UF 10 SQ7 GSM WCDMA LTE PCB Antenna with cable and U FL 690 960 MHz 1710 2170 MHz 2500 2700 MHz 110 0 x 21 0 mm...

Страница 88: ...Application Board Antenna Cable SARA R4 N4 56 ANT 62 ANT_DET R1 C1 D1 L1 C2 J 1 Z0 50 Z0 50 Z0 50 ohm Antenna Assembly R2 C4 L3 Radiating Element Diagnostic Circuit GND L2 C3 Figure 35 Suggested sche...

Страница 89: ...L2 in Figure 35 is provided at the ANT pin as ESD immunity improvement The ANT pin must be connected to the antenna connector by means of a transmission line with nominal characteristics impedance as...

Страница 90: ...t range minimum limit 1 k highlights a short to GND at antenna or along the RF cable Measurement inside the valid measurement range and outside the expected range may indicate an unclean connection a...

Страница 91: ...on 2 4 1 and the recommendations of the SMA connector manufacturer DC blocking capacitor at ANT pin C2 must be placed in series to the 50 RF line The ANT_DET pin must be connected to the 50 transmissi...

Страница 92: ...ntacts also including the auxiliary contacts C4 and C8 Only 6 contacts are required and must be connected to the module SIM interface Removable SIM cards are suitable for applications requiring a chan...

Страница 93: ...M_CLK pin of the module Connect the UICC SIM contact C2 RST to the SIM_RST pin of the module Connect the UICC SIM contact C5 GND to ground Provide a 100 nF bypass capacitor e g Murata GRM155R71C104K o...

Страница 94: ...ingle removable SIM card with SIM detection not implemented Reference Description Part Number Manufacturer C1 C2 C3 C4 47 pF Capacitor Ceramic C0G 0402 5 50 V GRM1555C1H470JA01 Murata C5 100 nF Capaci...

Страница 95: ...s placed closer than 10 30 cm from the SIM lines Limit capacitance and series resistance on each SIM signal to match the SIM requirements 18 7 ns is the maximum allowed rise time on clock line 1 0 s i...

Страница 96: ...g Murata GRM1555C1H470J on each SIM line VSIM SIM_CLK SIM_IO SIM_RST very close to each related pad of the SIM connector to prevent RF coupling especially in case the RF antenna is placed closer than...

Страница 97: ...as described below In the first case the long connection can cause the radiation of some harmonics of the digital data frequency as any other digital interface It is recommended to keep the traces sho...

Страница 98: ...terface application circuit with complete V 24 link in DTE DCE serial communication 1 8V DTE If a 3 0 V Application Processor DTE is used then it is recommended to connect the 1 8 V UART of the module...

Страница 99: ...ld be implemented as if a 1 8 V Application Processor DTE is used given that the DTE will behave correctly regardless of the DSR input setting TxD Application Processor 1 8V DTE RxD RTS CTS DTR DSR RI...

Страница 100: ...V DTE Providing the TXD RXD RTS and CTS lines only 16 If the functionality of the DSR DCD RI and DTR lines is not required or the lines are not available Connect the module DTR input to GND using a 0...

Страница 101: ...45 4 V_INT TxD Application Processor 3 0V DTE RxD RTS CTS DTR DSR RI DCD GND SARA R4 N4 1 8V DCE 12 TXD 9 DTR 13 RXD 10 RTS 11 CTS 6 DSR 7 RI 8 DCD GND 1V8 B1 A1 GND U1 B3 A3 VCCB VCCA Unidirect iona...

Страница 102: ...the Maxim MAX13234E voltage level translator can be used This chip translates voltage levels from 1 8 V module side to the RS 232 standard If a 1 8 V Application Processor DTE is used the circuit tha...

Страница 103: ...ure 47 UART interface application circuit with a partial V 24 link 3 wire in DTE DCE serial communication 3 0 V DTE Reference Description Part Number Manufacturer C1 C2 100 nF Capacitor Ceramic X7R 04...

Страница 104: ...of the DTE if any and the baud rate required by the application for the appropriate selection of the resistance value for the external pull up biased by the application processor supply rail The TXD...

Страница 105: ...on device with very low capacitance should be provided close to accessible point on the line connected to this pin as described in Figure 48 and Table 33 The USB interface pins ESD sensitivity rating...

Страница 106: ...y be degraded if PCB layout is not optimal especially when the USB signaling lines are very long Use the following general routing guidelines to minimize signal quality problems Route USB_D USB_D line...

Страница 107: ...e SDIO interface is not supported by 00 01 02 and 52 product versions the SDIO interface pins should not be driven by any external device 2 6 5 DDC I2 C interface 2 6 5 1 Guidelines for DDC I2C circui...

Страница 108: ...SCL and SDA lines route connections as short as possible ESD sensitivity rating of the DDC I2 C pins is 1 kV Human Body Model according to JESD22 A114 Higher protection level could be required if the...

Страница 109: ...eceiver SDA2 SCL2 VMAIN 1V8 U1 23 GPIO2 SDA SCL C1 26 27 VCC R1 GNSS supply enabled SARA R4 N4 except 00 01 versions TxD1 GPIO3 24 GNSS dat a ready Figure 51 Application circuit for connecting SARA R4...

Страница 110: ...VCCB VCCA Unidirect ional Volt age Translat or C4 C5 3V0 TxD1 R1 IN OUT LDO Regulat or SHDNn R2 VMAIN 3V0 U1 23 GPIO2 26 SDA 27 SCL 1V8 SDA_A SDA_B GND U2 SCL_A SCL_B VCCA VCCB I2C bus Bidirect ional...

Страница 111: ...4 series modules GPIOs can be the following Network indication provided over GPIO1 pin see Figure 53 Table 36 below GNSS supply enable function provided by the GPIO2 pin see section 2 6 5 GNSS Tx data...

Страница 112: ...low insert a multi channel digital switch e g TI SN74CB3Q16244 TS5A3159 TS5A63157 between the two circuit connections and set to high impedance before V_INT switch on ESD sensitivity rating of the GPI...

Страница 113: ...ble countermeasures to avoid any possible Electro Magnetic Compatibility issue Make sure that the module RF and analog parts circuits and high speed digital circuits are clearly separated from any sen...

Страница 114: ...d SMD pad type as it implements the solder resist mask opening 50 m larger per side than the corresponding copper pad The recommended thickness of the stencil for the soldering paste is 150 m accordin...

Страница 115: ...enerated power strictly depends on operating condition such as the actual antenna return loss the transmitting frequency band etc The generated thermal power must be adequately dissipated through the...

Страница 116: ...es good thermal dissipation Beside the reduction of the Module to Ambient thermal resistance implemented by correct application hardware design the increase of module temperature can be moderated by a...

Страница 117: ...INT B1 A1 GND B2 A2 VCCB VCCA SN74AVC2T245 Volt age Translat or 100nF 100nF 3V0 TxD1 4 7k IN OUT LDO Regulat or SHDNn 4 7k 3V8 3V0 23 GPIO2 V_INT SDA_A SDA_B GND SCL_A SCL_B VCCA VCCB TCA9406 I2C Volt...

Страница 118: ...ing pins of the SARA R4 N4 series modules V_INT PWR_ON and RESET_N for diagnostic purposes Capacitance and series resistance must be limited on each SIM signal to match the SIM specifications Insert t...

Страница 119: ...pin with application board solid ground layer Use as many vias as possible to connect the ground planes on multilayer application board providing a dense line of vias at the edges of each ground area...

Страница 120: ...4 N4 series modules as Human Body Model according to JESD22 A114F is specified in the SARA R4 N4 series Data Sheet 1 ESD prevention is based on establishing an Electrostatic Protective Area EPA The EP...

Страница 121: ...discharge through the RF pin do not touch any exposed antenna area If there is any risk that such exposed antenna area is touched in a non ESD protected work area implement adequate ESD protection me...

Страница 122: ...in section 2 11 The quality of the solder joints should meet the appropriate IPC specification 3 3 2 Reflow soldering A convection type soldering oven is strongly recommended for SARA R4 N4 series mod...

Страница 123: ...ical effects solder becomes more brittle of the solder and possible mechanical tensions in the products Controlled cooling helps to achieve bright solder fillets with a good shape and low contact angl...

Страница 124: ...s For best results use a no clean soldering paste and eliminate the cleaning step after the soldering 3 3 5 Repeated reflow soldering Repeated reflow soldering processes and soldering the module upsid...

Страница 125: ...the cellular modules and it is important to prevent them from flowing into the module The RF shields do not provide 100 protection for the module from coating liquids with low viscosity therefore care...

Страница 126: ...3 3 12 Use of ultrasonic processes The cellular modules contain components which are sensitive to ultrasonic waves Use of any ultrasonic processes cleaning welding etc may cause damage to the module...

Страница 127: ...ator in United States SARA R4 N4 series modules approvals are summarized in Table 38 Certification SARA R404M SARA R410M 01B SARA R410M 02B SARA R410M 52B SARA R412M 02B SARA N410 02B PTCRB LTE Cat M1...

Страница 128: ...nctionalities of the whole application device and on the network operators where the device is intended to operate The SARA R4 N4 series modules from 02 product versions onwards include the capability...

Страница 129: ...dules must be updated from the module PICS statement if any feature stated as supported by the module in its PICS document is not implemented or disabled in the application device For more details reg...

Страница 130: ...s device may not cause harmful interference this device must accept any interference received including interference that may cause undesired operation Radiofrequency radiation exposure information th...

Страница 131: ...ing o For SARA R404M modules Contains FCC ID XPY2AGQN1NNN o For SARA R410M and SARA N410 modules Contains FCC ID XPY2AGQN4NNN o For SARA R412M cellular modules Contains FCC ID XPYUBX18ZO01 IMPORTANT M...

Страница 132: ...erence this device must accept any interference received including interference that may cause undesired operation Radiofrequency radiation exposure information this equipment complies with the radiat...

Страница 133: ...SED Canada Certificates of the SARA R4 N4 series modules for their own final products according to the conditions referenced in the certificates The ISED Canada Label shall in the above case be visibl...

Страница 134: ...est conforme aux normes canadiennes CAN ICES 3 B NMB 3 B Son fonctionnement est soumis aux deux conditions suivantes o cet appareil ne doit pas causer d interf rence o cet appareil doit accepter tout...

Страница 135: ...t final et d poser directement leur candidature pour une certification FCC ainsi que pour un certificat ISDE Canada d livr par l organisme charg de ce type d appareil portable Ceci est obligatoire afi...

Страница 136: ...een the radiator and the body of the user or nearby persons This transmitter must not be co located or operating in conjunction with any other antenna or transmitter except as authorized in the certif...

Страница 137: ...l UBX 16029218 R11 Approvals Page 137 of 157 4 5 Taiwanese National Communication Commission The SARA R410M 02B product version has the applicable regulatory approval for Taiwan NCC SARA R410M 02B mod...

Страница 138: ...cal automatic test equipment ATE in a production line The following typical tests are among the production tests Digital self test firmware download flash firmware verification IMEI programming Measur...

Страница 139: ...example the measurement of the module current consumption when set in a specified status can detect a short circuit if compared with a Golden Device result In addition module AT commands can be used t...

Страница 140: ...allows the measurement of the transmitter and receiver power levels to check the component assembly related to the module antenna interface and to check other device interfaces on which the RF perfor...

Страница 141: ...rocessor AT commands Cellular ant enna Spect rum Analyzer or Power Met er IN Wideband ant enna TX Applicat ionBoard SARA R4 N4 Applicat ion Processor AT commands Signal Generat or OUT Wideband ant enn...

Страница 142: ...ND GND GND GND GND GND GND GND ANT_DET ANT SARA G3 Top View Pin 65 96 GND 64 63 61 60 58 57 55 54 22 23 25 26 28 29 31 32 11 10 8 7 5 4 2 1 21 19 18 16 15 13 12 43 44 46 47 49 50 52 53 33 35 36 38 39...

Страница 143: ...th the u blox nested design solution any TOBY LISA SARA or LARA module can be alternatively mounted on the same space of a single nested application board as described in Figure 60 Guidelines for impl...

Страница 144: ...GND Ground 6 DSR UART DSR Output V_INT level 1 8 V Driver strength 6 mA DSR UART DSR Output V_INT level 1 8 V Driver strength 1 mA DSR UART DSR Output V_INT level 1 8 V Driver strength 2 mA RSVD Rese...

Страница 145: ...up 8 k TXD UART Data Input V_INT level 1 8 V Internal pull up down 100k TXD UART Data Input VCC level 3 6 V typ No internal pull up down Diverse level V_INT vs VCC Diverse pull up pull down TestPoint...

Страница 146: ...ESET_N Abrupt shutdown reset input 10 k internal pull up L level 0 30 V 0 51 V H level 1 32 V 2 01 V Reset L level pulse time 50 ms min RESET_N Abrupt shutdown input 37 k internal pull up L level 0 30...

Страница 147: ...al pull up SDA I2 C Data I O AUX UART in 04 version V_INT level 1 8 V Open drain No internal pull up SDA I2 C Data I O22 V_INT level 1 8 V Open drain Internal 2 2 k pull up SDA I2 C Data I O23 V_INT l...

Страница 148: ...I2 S Data Out24 SPI chip select24 V_INT level 1 8 V Driver strength 2 mA RSVD Reserved I2S vs SPI vs Reserved 36 I2S_CLK RSVD I2 S Clock G340 G350 Reserved G300 G310 V_INT level 1 8 V Driver strength...

Страница 149: ...In Reserved RSVD Reserved SDIO_D3 SDIO serial data 3 24 RSVD Reserved Analog Audio vs SDIO vs RSVD 49 MIC_P RSVD Analog Audio In Reserved RSVD Reserved SDIO_D1 SDIO serial data 1 24 RSVD Reserved Ana...

Страница 150: ...ANT_DET Antenna Detection Input ANT_DET Antenna Detection Input ANT_DET Antenna Detection Input25 Antenna Detection vs Reserved 63 96 GND Ground GND Ground GND Ground GND Ground Table 40 SARA G3 SARA...

Страница 151: ...Reception DTE Data Terminal Equipment EDGE Enhanced Data rates for GSM Evolution EGPRS eDRX Extended Discontinuous Reception EGPRS Enhanced General Packet Radio Service EDGE EMC Electro Magnetic Comp...

Страница 152: ...o Machine protocol M2M Machine to Machine MQTT Message Queuing Telemetry Transport N A Not Applicable NAS Non Access Stratum OEM Original Equipment Manufacturer device an application device integratin...

Страница 153: ...Time Division Duplex TDMA Time Division Multiple Access TIS Total Isotropic Sensitivity TP Test Point TRP Total Radiated Power UART Universal Asynchronous Receiver Transmitter UDP User Datagram Protoc...

Страница 154: ...on Technique https www gsma com newsroom wp content uploads TS 09_v10 1 pdf 11 3GPP TS 36 521 1 Evolved Universal Terrestrial Radio Access User Equipment conformance specification Radio transmission a...

Страница 155: ...guidelines description Added I2C design guidelines description R08 26 Feb 2018 sses Updated SARA R410M 02B product status Extended document applicability to SARA R412M 02B product version Corrected p...

Страница 156: ...ox com Support support_ap u blox com Regional Office Australia Phone 61 2 8448 2016 E mail info_anz u blox com Support support_ap u blox com Regional Office China Beijing Phone 86 10 68 133 545 E mail...

Страница 157: ...157 Phone 81 3 5775 3850 E mail info_jp u blox com Support support_jp u blox com Regional Office Korea Phone 82 2 542 0861 E mail info_kr u blox com Support support_kr u blox com Regional Office Taiw...

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