Texas Instruments TPS23525EVM-815, Руководство пользователя

Страница: 13 / 20

www.ti.com
Bill of Material
13 SLVUB36 – October 2017
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
TPS23525EVM-815 Evaluation Module
5 Bill of Material
Table 5 lists the EVM BOM.
Table 5. TPS23525EVM-815 Bill of Materials
Designator Qty Value Description Package
Reference Part Number Manufacturer
!PCB1 1 Printed Circuit Board PWR815 Any
C1, C7 2 0.1uF CAP, CERM, 0.1 µF, 100 V, ±10%, X7R,
1206 1206 C3216X7R2A104K
160AA TDK
C2 1 0.015uF CAP, CERM, 0.015 µF, 100 V, ±10%,
X7R, AEC-Q200 Grade 1, 0603 0603 CGA3E2X7R2A15
3K080AA TDK
C3, C4 2 0.1uF CAP, CERM, 0.1 µF, 250 V, ±10%, X7R,
1206 1206 GRM31CR72E104
KW03L Murata
C6 1 0.15uF CAP, CERM, 0.15 µF, 50 V, ±10%, X7R,
AEC-Q200 Grade 1, 0603 0603 CGA3E3X7R1H15
4K080AB TDK
C10, C11 2 330uF CAP, AL, 330 µF, 100 V, ±20%, 0.153
ohm, SMD SMT Radial K16 EEV-FK2A331M Panasonic
C14 1 1uF CAP, CERM, 1 µF, 100 V, ±20%, X7R,
1206 1206 C3216X7R2A105M
160AA TDK
C16, C17 2 1000pF CAP, CERM, 1000 pF, 250 V, ±10%,
X7R, 0805 0805 GRM21AR72E102
KW01D Murata
C20 1 0.033uF CAP, CERM, 0.033 µF, 100 V, ±10%,
X7R, 0805 0805 GRM21BR72A333
KA01L Murata
C21 1 0.01uF CAP, CERM, 0.01 µF, 100 V, ±1%,
C0G/NP0, 0805 0805 C0805C103F1GAC
TU Kemet
D1 1 150V Diode, Schottky, 150 V, 1 A, SMA SMA STPS1150A STMicroelectronics
H1, H2, H3, H4 4 Machine Screw, Round, #4-40 x 1/4,
Nylon, Philips panhead Screw NY PMS 440 0025
PH B&F Fastener
Supply
H5, H6, H7, H8 4 Standoff, Hex, 0.5"L #4-40 Nylon Standoff 1902C Keystone
J1, J2, J3, J7, J8,
J9, J10 7 Standard Banana Jack, Uninsulated,
8.9mm Keystone575-8 575-8 Keystone
J5 1 Header, 100mil, 3x1, Gold, TH PBC03SAAN PBC03SAAN Sullins Connector
Solutions
J6 1 Header, 100mil, 2x1, Gold, TH 2x1 Header TSW-102-07-G-S Samtec
L1 1 5.6uH Inductor, Shielded Drum Core, Mn-Zn,
5.6 µH, 25 A, 0.00274 ohm, SMD 18.3x8.9x18.2mm 7443557560 Wurth Elektronik
Q5 1 100V MOSFET, N-CH, 100 V, 197 A, TO-263-
2 KTT0002A CSD19535KTT Texas Instruments
Q11, Q12, Q13,
Q14 4 200V MOSFET, N-CH, 200 V, 36 A, PG-
TDSON-8 PG-TDSON-8 BSC320N20NS3 G Infineon
Technologies
Q19 1 150 V Transistor, PNP, 150 V, 0.5 A, SOT-23 SOT-23 MMBT5401LT1G ON Semiconductor
R1 1 301k RES, 301 k, 1%, 0.125 W, 0805 0805 CRCW0805301KF
KEA Vishay-Dale
R2 1 200k RES, 200 k, 1%, 0.125 W, 0805 0805 CRCW0805200KF
KEA Vishay-Dale
R3 1 16.2k RES, 16.2 k, 1%, 0.75 W, AEC-Q200
Grade 0, 2010 2010 CRCW201016K2F
KEF Vishay-Dale
R5, R6 2 499k RES, 499 k, 1%, 0.25 W, 1206 1206 CRCW1206499KF
KEA Vishay-Dale
R7 1 49.9k RES, 49.9 k, 1%, 0.1 W, 0603 0603 CRCW060349K9F
KEA Vishay-Dale
R8 1 10.0 RES, 10.0, 1%, 0.25 W, 1206 1206 CRCW120610R0F
KEA Vishay-Dale
R10, R11 2 1.00k RES, 1.00 k, 1%, 0.125 W, 0805 0805 CRCW08051K00F
KEA Vishay-Dale
R13 1 374k RES, 374 k, 1%, 0.1 W, 0603 0603 RC0603FR-
07374KL Yageo America
R14 1 1.00k RES, 1.00 k, 1%, 0.1 W, 0603 0603 CRCW06031K00F
KEA Vishay-Dale
R16 1 4.75k RES, 4.75 k, 1%, 0.1 W, 0603 0603 CRCW06034K75F
KEA Vishay-Dale
R17, R31, R32,
R33, R34 5 10.0 RES, 10.0 ohm, 1%, 0.1W, 0603 0603 CRCW060310R0F
KEA Vishay-Dale