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TMS570LS0714
SPNS226E – JUNE 2013 – REVISED NOVEMBER 2016
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TMS570LS0714
System Information and Electrical Specifications
Copyright © 2013–2016, Texas Instruments Incorporated
(1)
This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 144 bits at a time at the maximum specified operating frequency.
(2)
During bank erase, the selected sectors are erased simultaneously. The time to erase the bank is specified as equal to the time to erase
a sector.
6.10.5 Program Flash
Table 6-23. Timing Requirements for Program Flash
MIN
NOM
MAX
UNIT
t
prog(144bit)
Wide Word (144-bit) programming time
40
300
µs
t
prog(Total)
768KB programming time
(1)
–40°C to 125°C
8
s
0°C to 60°C, for first
25 cycles
2
4
s
t
erase(bank0)
Sector/Bank erase time
(2)
–40°C to 125°C
0.03
4
s
0°C to 60°C, for first
25 cycles
16
100
ms
t
wec
Write/erase cycles with 15-year Data Retention
requirement
–40°C to 125°C
1000
cycles
(1)
This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 72 bits at a time at the maximum specified operating frequency.
6.10.6 Data Flash
Table 6-24. Timing Requirements for Data Flash
MIN
NOM
MAX
UNIT
t
prog(144bit)
Wide Word (72-bit) programming time
47
310
µs
t
prog(Total)
EEPROM Emulation (bank 7) 64KByte
programming time
(1)
–40°C to 125°C
2.6
s
0°C to 60°C, for first
25 cycles
775
1435
ms
t
erase(bank7)
Sector/Bank erase time, EEPROM Emulation
(bank 7)
–40°C to 125°C
0.2
8
s
0°C to 60°C, for first
25 cycles
14
100
ms
t
wec
Write/erase cycles with 15-year Data Retention
requirement
–40°C to 125°C
100000
cycles