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SM320F2812-HT
SGUS062B
–
JUNE 2009
–
REVISED JUNE 2011
www.ti.com
6.31 Flash Timing
6.31.1 Recommended Operating Conditions
Table 6-62. Flash Endurance Timing
(1) (2)
ERASE/PROGRAM
MIN
NOM
MAX
UNIT
TEMPERATURE
N
f
Flash endurance for the array (write/erase cycles)
-40
°
C to 125
°
C (ambient)
20000
(3)
50000
(3)
cycles
N
OTP
OTP endurance for the array (write cycles)
-40
°
C to 125
°
C (ambient)
1
write
(1)
Write/erase operations outside of the temperature ranges indicated are not specified and may affect the endurance numbers.
(2)
Flash Timing Endurance is the minimum number of write/erase or write cycles specified over a programming temperature range of -40
°
C
to 125
°
C. Flash reads are supported within the recommended operating conditions specified in section 6.2.
(3)
The write/erase cycle numbers of 20000 (MIN) and 50000 (TYP) are applicable only for silicon revision G. For older silicon revisions, the
write/erase cycle numbers of 100 (MIN) and 1000 (TYP) are applicable.
Table 6-63. Flash Parameters at 150-MHz SYSCLKOUT
(1) (2)
PARAMETER
MIN
TYP
MAX
UNIT
16-Bit Word
35
μ
s
Program
8K Sector
170
ms
Time
16K Sector
320
ms
8K Sector
10
s
Erase Time
16K Sector
11
s
Erase
75
mA
I
DD3VFLP
V
DD3VFL
current consumption during the Erase/Program cycle
Program
35
mA
I
DDP
V
DD
current consumption during Erase/Program cycle
140
mA
I
DDIOP
V
DDIO
current consumption during Erase/Program cycle
20
mA
(1)
Typical parameters as seen at room temperature using flash API V1 including function call overhead.
(2)
Not production tested.
Table 6-64. Flash/OTP Access Timing
(1) (2)
PARAMETER
MIN
TYP
MAX
UNIT
t
a(fp)
Paged Flash access time
36
ns
t
a(fr)
Random Flash access time
36
ns
t
a(OTP)
OTP access time
60
ns
(1)
For 150 MHz, PAGE WS = 5 and RANDOM WS = 5
For 135 MHz, PAGE WS = 4 and RANDOM WS = 4
(2)
Not production tested.
146
Electrical Specifications
Copyright
©
2009
–
2011, Texas Instruments Incorporated
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