background image

The  end  user  can  enable  the  device  (exit  Ship  Mode)  by  connecting  an  adapter  to  IN  (V

IN

  >  V

BAT

  +  V

SLP

)  or

by toggling the MR button. Note that in the case where an adapter is connected while the MR is still held low
and immediately after the RESET timer has expired ( MR low for t

RESET

), the device will not enter Ship Mode,

but may enter it upon adapter removal (Same behavior as setting the EN_SHIPMODE bit when the adapter is
present). This will not be the case if MR has gone high when the adapter is connected or MR continues to be
held low for a period longer than t

WAKE1

 after the adapter is connected.

To  exit  Ship  Mode  through  and  MR  press  the  battery  voltage  must  be  above  the  maximum  programmable
BUVLO threshold when V

IN

 is not present. Once MR goes low, the device will start to exit Ship Mode, powering

PMID. The device will not complete the transition from Ship Mode until MR has been held low for at least t

WAKE1

.

Only  after  the  transition  is  complete  may  the  host  start  I

2

C  communication  if  the  device  has  not  entered  High

Impedance Mode.

9.3.2 High Impedance Mode

High Impedance mode is the lowest quiescent current state while operating from the battery. During Hi-Z mode
the SYS output is powered by BAT, the MR input is active, and the LSCTRL input is active. All other circuits are
in a low power or sleep state.The LS/LDO output can be enabled in Hi-Z mode with the LSCTRL input. If the
LS/LDO  output  has  been  enabled  through  I

2

C  prior  to  entering  Hi-Z  mode,  it  will  stay  enabled.  The CD  pin  is

used to put the device in a high-impedance mode when battery is present and V

IN

 < V

UVLO

. Drive CD high to

enable the device and enter active battery operation when V

IN

 is not valid. When the HZ_MODE bit is written by

the host, the I

2

C interface is disabled if only battery is present. To resume I

2

C, the CD pin must be toggled. If the

supply for the CD pull up glitches or experiences a brownout condition , it is recommended to toggle the CD pin
to resume I

2

C communication. The functionality of the pin is shown in 

Table 9-1

.

Table 9-1. CD, State Table

CD, STATE

V

IN

 < V

UVLO

V

IN

 > V

UVLO

L

Hi-Z

Charge Enabled

H

Active Battery

Charge Disabled

9.3.3 Active Battery Only Connected

When  the  battery  above  V

BATUVLO

  is  connected  with  no  input  source,  the  battery  discharge  FET  is  turned  on.

After  the  battery  rises  above  V

BATUVLO

  and  the  deglitch  time  is  reached,  the  SYS  output  starts  to  rise.  The

current from PMID and SYS is not regulated, but is protected by a short circuit current limit. If the short circuit
limit  is  reached  for  the  deglitch  time  (t

DGL_SC

),  the  battery  discharge  FET  is  turned  off  for  the  recovery  time

(t

REC_SC

). After the recovery time, the battery FET is turned on to test if the short has been removed. If it has not,

the FET turns off and the process repeats until the short is removed. This process protects the internal FET from
over current. During this event PMID will likely droop and cause SYS to go out of regulation.

To provide designers the most flexibility in optimizing their system, an adjustable BATUVLO is provided. When
the voltage drops below the V

BATUVLO

 threshold, the battery discharge FET is turned off. Deeper discharge of

the battery enables longer times between charging, but may shorten the battery life. The BATUVLO is adjustable
with a fixed 150-mV hysteresis.

If a valid V

IN

 is connected during active battery mode, V

IN

 > V

UVLO

, the supplement and battery discharge FET is

turned on when the battery voltage is above the minimum V

BATUVLO

.

Drive CD high or write the CE register to disable charge when V

IN

 > V

UVLO

 is present. CD is internally pulled

down. When exiting this mode, charging resumes if V

IN

 is present, CD is low and charging is enabled.

All HOST interfaces ( CD, SDA/SCL, INT, RESET and LSCTRL) are active no later than 5 ms after SYS reaches
the programmed level.

9.3.4 Voltage Based Battery Monitor

The device implements a simple voltage battery monitor which can be used to determine the depth of discharge.
Prior to entering High-Z mode, the device will initiate a VBMON reading. The host can read the latched value
for  the  no-load  battery  voltage,  or  initiate  a  reading  using  VBMON_READ  to  see  the  battery  voltage  under  a
known load. The register will be updated and can be read 2 ms after a read is initiated. The VBMON voltage

BQ25123

SLUSCZ6A – JANUARY 2018 – REVISED MAY 2021

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BQ25123

Содержание BQ25123

Страница 1: ...output voltage adjustment 2 Applications Smart watches and other wearable devices Fitness accessories Health monitoring medical accessories Rechargeable toys 3 Description The BQ25123 is a highly int...

Страница 2: ...lication Information 47 10 2 Typical Application 47 11 Layout 63 11 1 Layout Guidelines 63 11 2 Layout Example 63 12 Device and Documentation Support 64 12 1 Device Support 64 12 2 Receiving Notificat...

Страница 3: ...y only mode the device can run from a battery up to 4 65 V A configurable load switch allows system optimization by disconnecting infrequently used devices The manual reset with timer allows mutliple...

Страница 4: ...drain output that signals charging status and fault interrupts INT pulls low during charging INT is high impedance when charging is complete disabled or the charger is in high impedance mode When a f...

Страница 5: ...he output filter cap from the buck converter to this ground as shown in the layout example PMID A3 B3 I O High Side Bypass Connection Connect at least 3 F of ceramic capacitance with DC bias derating...

Страница 6: ...JS 001 1 2000 V Charged device model CDM per JEDEC specification JESD22 C101 2 500 1 JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process 2 JEDEC...

Страница 7: ...Mode PWM Not Switching V BUVLO V BAT 6 6 V 0 9 1 5 A 0 C TJ 60 C VIN 0 V or floating High Z Mode PWM Switching No Load 0 75 3 5 A 0 C TJ 85 C VIN 0 V High Z Mode PWM Switching LSLDO enabled 1 35 4 25...

Страница 8: ...90 200 210 A I TERM Termination charge current Termination current programmable range over I2C 0 5 37 mA Termination current using IPRETERM I CHARGE 300 mA R ITERM 15 k 5 of ISET I CHARGE 300 mA R ITE...

Страница 9: ...mA 20 I OCL_LDO Output current Limit LDO VLS LDO 0 V 275 365 475 mA I LS LDO Output current V VINLS 3 6 V VLSLDO 3 3 V 100 mA V VINLS 3 3 V VLSLDO 0 8 V 100 mA V VINLS 2 2 V VLSLDO 0 8 V 10 mA IIN LDO...

Страница 10: ...N VUVLO 11 C tDGL_SHTDW N Deglitch time thermal shutdown TJ rising above TSHTDWN 4 s I2C INTERFACE I2C bus specification standard and fast mode frequency support 100 400 kHz VIL Input low threshold le...

Страница 11: ...00 s LS LDO OUTPUT tON_LDO Turn ON time 100 mA load 500 s tOFF_LDO Turn OFF time 100 mA load 5 s PUSHBUTTON TIMER tWAKE1 Push button timer wake 1 Programmable range for wake1 function 0 08 1 s tWAKE2...

Страница 12: ...T IQ Typical Start Up Timing and Operation VBAT VBUVLO Remove Battery Shows Charge Status VISET 3uA max 4uA max No SYS Load SYS Load Applied 3uA max 5uA max 4uA max nA of leakage with VIN present 0mA...

Страница 13: ...eral ms SYS starts to rise Device enters Active Battery Mode after valid MR 1uA max User depresses button SYS is pulled down shortly after VBATUVLO is reached VBAT VBUVLO 3uA max Conditions SW_LDO 1 M...

Страница 14: ...ture qC R DS ON m 40 25 10 5 20 35 50 65 80 95 110 125 0 100 200 300 400 500 600 700 D024 Figure 8 6 Blocking FET RDS ON vs Temperature Temperature qC R DS ON m 40 25 10 5 20 35 50 65 80 95 110 125 0...

Страница 15: ...vs Pre Charge Current Temperature qC R DS ON m 40 25 10 5 20 35 50 65 80 95 110 125 0 100 200 300 400 500 600 700 800 900 1000 D026 D024 VIN 5 V Figure 8 12 RDS ON of High Side MOSFET vs Temperature T...

Страница 16: ...OOL SYS 1C 0 5C Disable Disable VBATREG 140mV LDO Load Switch Control IINLIM Q1 Q2 Q3 Q4 VIN_DPM VSUPPLY VBATREG LDO Control VSYSREG Thermal Shutdown Termination Reference IBAT VIN VINOVP VBAT VBATOVP...

Страница 17: ...esent the device will enter Ship Mode upon removal of the supply The EN_SHIPMODE bit can be cleared using the I2C interface as well while the IN input is valid In addition to VIN VUVLO CD and MR must...

Страница 18: ...attery Charge Disabled 9 3 3 Active Battery Only Connected When the battery above VBATUVLO is connected with no input source the battery discharge FET is turned on After the battery rises above VBATUV...

Страница 19: ...V VBMON 98 VBMON 94 or 96 VBMON 90 or 92 VBMON 86 or 88 VBMON 84 D E C O D E R S3 S2 S1 S0 2 BAT TAP 4 BAT TAP 6 BAT TAP 8 BAT TAP 10 BAT TAP VREF 90 VB 80 VB 70 VB 60 VB VB 0 8 VBAT VBGUAGE_TH 2 0 F...

Страница 20: ...it in the control register determines whether a charge cycle is initiated When the CE bit is 1 and a valid input source is connected the battery discharge FET is turned off and the output at SYS is re...

Страница 21: ...gh an external resistor or through registers over I2C Set the termination current using the IPRETERM pin by connecting a resistor from IPRETERM to GND The termination can be set between 5 and 20 of th...

Страница 22: ...ernally programmed value the voltage at ISET reflects the actual charging current and can be used to monitor charge current The current out of ISET is 1 100 10 of the charge current The charge current...

Страница 23: ...tery pack thermistor is monitored by the host Additionally the device provides a flexible voltage based TS input for monitoring the battery pack NTC thermistor The voltage at TS is monitored to determ...

Страница 24: ...ol thresholds are not independently programmable The cool and warm NTC resistances for a selected resistor devider are calculated using Equation 3 and Equation 4 COOL COOL COOL LO HI COOL LO LO HI R x...

Страница 25: ...ith an LED for visual indication The PG pin can be configured as a MR shifted MRS output when the PGB_MRS bit is set to 1 PG is high impedance when the MR input is not low and PG pulls to GND when the...

Страница 26: ...PFM transition point where the part enters and exits Pulse Frequency Modulation to lower the power consumed at low loads the output voltage ripple and the efficiency The selected inductor must be sele...

Страница 27: ...he device integrates a low Iq load switch which can also be used as a regulated output The LSCTRL pin can be used to turn the load on or off Activating LSCTRL continuously holds the switch in the on s...

Страница 28: ...the host and the WAKE1 and or WAKE2 bits are updated on I2C The MR_WAKE bits and RESET FAULT bits are not cleared until the Push button Control Register is read from I2C When a MR reset condition is m...

Страница 29: ...Status Condition Responses FAULT or STATUS ACTIONS CHARGER BEHAVIOR SYS BEHAVIOR LS LDO BEHAVIOR TS BEHAVIOR VIN_OV Update VIN_OV status Update STAT to fault interrupt on INT PG shown not good Disabl...

Страница 30: ...state unless disabled in OTP or register settings FAULT A failure occurred The fault event must be cleared before going to the previous state DONE The termination requirements have been met VBAT is mo...

Страница 31: ...mpatible interface to program and read many parameters I2C is a 2 wire serial interface developed by NXP The bus consists of a data line SDA and a clock line SCL with pull up structures When the bus i...

Страница 32: ...ster ensures that data is valid A valid data condition requires the SDA line to be stable during the entire high period of the clock pulse see Figure 9 8 All devices recognize the address sent by the...

Страница 33: ...dressed slave All I2C compatible devices must recognize the STOP condition Upon the receipt of a STOP condition all devices know that the bus is released and wait for a START condition followed by a m...

Страница 34: ...only B6 STAT_0 R x B5 EN_SHIPMODE Write Only 0 0 Normal Operation 1 Ship Mode Enabled B4 RESET_FAULT R x 1 RESET fault Indicates when the device meets the RESET conditions and is cleared after I2C re...

Страница 35: ...one time Once read VIN_UV clears until the the UVLO event occurs B5 BAT_UVLO R x 1 BAT_UVLO fault BAT_UVLO continues to show fault after an I2C read as long as BAT_UVLO conditions exist B4 BAT_OCP R x...

Страница 36: ...fault indicated and charge has stopped B3 EN_INT R W 1 0 Disable INT function INT only shows faults and does not show charge status 1 Enable INT function INT shows faults and charge status B2 WAKE_M R...

Страница 37: ...mode ICHRG_RANGE and ICHRG bits are used to set the charge current The ICHRG is calculated using the following equation If ICHRG_RANGE is 0 then ICHRG 5 mA ICHRGCODE x 1 mA If ICHRG_RANGE is 1 then IC...

Страница 38: ...he following equation If IPRETERM_RANGE is 0 then ITERM 500 A ITERMCODE x 500 A If IPRETERM_RANGE is 1 then ITERM 6 mA ITERMCODE x 1 mA If a value greater than 5 mA IPRETERM_RANGE 0 is written the set...

Страница 39: ...ATREG is calculated using the following equation VBATREG 3 6 V VBREGCODE x 10 mV The charge voltage range is from 3 6 V to 4 65 V If a value greater than 4 65 V is written the setting goes to 4 65 V w...

Страница 40: ...tep if SYS_SEL is 01 or 11 B1 SYS_VOUT_0 R W 0 OUT Voltage 100 mV step if SYS_SEL is 01 or 11 B0 LSB 0 SW_VOUT Bits Use SYS_SEL and SYS_VOUT bits to set the output on SYS The SYS voltage is calculated...

Страница 41: ...0 2 V 10 0111 2 083 V 10 1000 2 167 V 10 1001 2 25 V 10 1010 2 333 V 10 1011 2 417 V 10 1100 2 5 V 10 1101 2 583 V 10 1110 2 667 V 10 1111 2 75 V 11 0000 1 8 V 11 0001 1 9 V 11 0010 2 V 11 0011 2 1 V...

Страница 42: ...S_LDO_1 R W 1 LS LDO Voltage 200 mV B2 LS_LDO_0 R W 0 LS LDO Voltage 100 mV B1 0 B0 LSB MRRESET_VIN R W x 0 Reset sent when MR Reset time is met 1 Reset sent when MR Reset time is met and VUVLO VSLP V...

Страница 43: ...0 0 After Reset device enters Ship mode 1 After Reset device enters Hi Z Mode B4 MRRESET_1 R W 1 MR Timer adjustment for reset 00 5 s 20 01 9 s 20 10 11 s 20 11 15 s 20 B3 MRRESET_0 R W 0 B2 PGB_MR R...

Страница 44: ...ing the following equation I INLIM 50 mA I INLIM CODE x 50 mA The default may be overridden by the external resistor on ILIM 9 6 11 Voltage Based Battery Monitor Register Memory location 0x0Ah Reset S...

Страница 45: ...ad then it will move to VBMON_RANGE 10 80 to 90 and continue until a non 000 value of VBMON_TH is found If this does not happen then VBMON_RANGE and VBMON_TH will be written with 00 000 The VBMON_READ...

Страница 46: ...B5 VINDPM_1 R W 0 Input V IN_DPM voltage 200 mV B4 VINDPM_0 R W 0 Input V IN_DPM voltage 100 mV B3 2XTMR_EN R W 0 0 Timer is not slowed at any time 1 Timer is slowed by 2x when in any control other t...

Страница 47: ...o shows the TS resistors which is also optional When powering up in default mode the battery voltage is the default for the part 4 2 V the SYS output is the default 1 8 V External resistors set the ch...

Страница 48: ...he application diagram 10 2 2 1 Default Settings Connect ISET ILIM and IPRETERM pins to ground to program fast charge current to 10 mA input current limit to 100 mA and pre charge termination current...

Страница 49: ...ermine that the battery is at a safe temperature during charging This device uses JEITA temperature profile which has four temperature thresholds Refer to Section 8 for the detailed thresholds number...

Страница 50: ...mV div Figure 10 4 Entering DPPM Mode Time 4 ms div 10 mA div 100 mA div 2 V div 500 mV div Figure 10 5 Exiting DPPM Mode Time 4 ms div 20 mA div 100 mA div 2 V div 500 mV div Figure 10 6 Entering Bat...

Страница 51: ...8 Charger On Off Using CD Time 4 ms div 10 mA div 20 mA div 2 V div 500 mV div Figure 10 9 OVP Fault www ti com BQ25123 SLUSCZ6A JANUARY 2018 REVISED MAY 2021 Copyright 2021 Texas Instruments Incorpo...

Страница 52: ...Figure 10 12 1 8 VSYS System Efficiency Load Current A Efficiency 1E 6 1E 5 0 0001 0 001 0 01 0 10 2 0 5 40 50 60 70 80 90 100 D010 3 0 V BAT 3 6 V BAT 3 8 V BAT 4 2 V BAT TA 25 C VSYS 2 5 V Figure 1...

Страница 53: ...T 4 2 V BAT TA 25 C VSYS 2 5 V Figure 10 18 2 5 VSYS Load Regulation Load Current A SYS Output Voltage V 1E 6 1E 5 0 0001 0 001 0 01 0 1 0 5 3 1845 3 2345 3 2845 3 3345 3 3845 D015 3 8 V BAT 4 2 V BAT...

Страница 54: ...1 PA 10 PA 100 PA 1 mA 10 mA 100 mA 4 2 TA 25 C VSYS 3 3 V Figure 10 24 3 3 VSYS Line Regulation Load Current mA Frequency F SW kHz 0 50 100 150 200 250 300 0 200 400 600 800 1000 1200 1400 D023 5 V...

Страница 55: ...tion Showing SW Time 400 ns div 500 mA div 200 mA div 2 V div 5 V div SW ILOAD 200 mA Figure 10 31 Light Load Operation Showing SW Time 400 ns div 500 mA div 200 mA div 2 V div 5 V div SW ILOAD 300 mA...

Страница 56: ...nsient 0 to 50 mA Time 4 s div m 500 mA div 50 mV div 50 mV div 5 V div SW VSYS 3 3 V Figure 10 37 3 3 VSYS Load Transient 0 to 50 mA Time 4 s div m 500 mA div 200 mV div 50 mV div 5 V div SW VSYS 1 2...

Страница 57: ...500 mA div 200 mV div 50 mV div 5 V div SW VSYS 3 3 V Figure 10 42 3 3 VSYS Load Transient 0 to 200 mA Time 1 ms div 1 V div 5 V div 2 V div Figure 10 43 Startup Showing SS on SYS in PWM Mode Time 20...

Страница 58: ...Transient 0 to 10 mA Time 4 s div m 50 mV div 5 V div 20 mV div VSLSDO 1 2 V Figure 10 48 1 2 VLSLDO Load Transient 0 to 10 mA Time 4 s div m 50 mV div 5 V div 20 mV div VSLSDO 1 8 V Figure 10 49 1 8...

Страница 59: ...nsient 0 to 100 mA Time 4 s div m 50 mV div 5 V div 100 mV div VSLSDO 1 8 V Figure 10 54 1 8 VLSLDO Load Transient 0 to 100 mA Time 4 s div m 50 mV div 5 V div 100 mV div VSLSDO 2 5 V Figure 10 55 2 5...

Страница 60: ...rtup Showing SS on LS LDO in LDO Mode Time 20 ms div 200 mA div 2 V div 2 V div Figure 10 58 Short Circuit and Recovery for LDO BQ25123 SLUSCZ6A JANUARY 2018 REVISED MAY 2021 www ti com 60 Submit Docu...

Страница 61: ...PG Functions as Shifted MR Output Time 400 s div m 500 mV div 2 V div 2 V div 5 V div Figure 10 62 PG Functions as Shifted MR Output Time 200 ms div 2 V div 2 V div 500 mV div 2 V div Wake1 500 ms Wa...

Страница 62: ...igure 10 67 RESET Timing Time 2 s div 2 V div 2 V div 500 mV div 2 V div Figure 10 68 RESET Timing and Enter Ship Mode Power Supply Recommendations It is recommended to use a power supply that is capa...

Страница 63: ...e Place the bypass caps for PMID SYS and LSLDO close to the pins Place the GNDs of the PMID and IN caps close to each other Do not route so the power planes are interrupted 11 2 Layout Example Figure...

Страница 64: ...essarily reflect TI s views see TI s Terms of Use 12 4 Trademarks TI E2E is a trademark of Texas Instruments All trademarks are the property of their respective owners 12 5 Electrostatic Discharge Cau...

Страница 65: ...m threshold Antimony trioxide based flame retardants must also meet the 1000ppm threshold requirement 3 MSL Peak Temp The Moisture Sensitivity Level rating according to the JEDEC industry standard cla...

Страница 66: ...PACKAGE OPTION ADDENDUM www ti com 6 Jun 2021 Addendum Page 2...

Страница 67: ...ins SPQ Reel Diameter mm Reel Width W1 mm A0 mm B0 mm K0 mm P1 mm W mm Pin1 Quadrant BQ25123YFPR DSBGA YFP 25 3000 180 0 8 4 2 65 2 65 0 69 4 0 8 0 Q1 BQ25123YFPT DSBGA YFP 25 250 180 0 8 4 2 65 2 65...

Страница 68: ...Package Type Package Drawing Pins SPQ Length mm Width mm Height mm BQ25123YFPR DSBGA YFP 25 3000 182 0 182 0 20 0 BQ25123YFPT DSBGA YFP 25 250 182 0 182 0 20 0 PACKAGE MATERIALS INFORMATION www ti co...

Страница 69: ...BALL GRID ARRAY NOTES 1 All linear dimensions are in millimeters Any dimensions in parenthesis are for reference only Dimensioning and tolerancing per ASME Y14 5M 2 This drawing is subject to change...

Страница 70: ...nal dimensions may vary due to manufacturing tolerance considerations and also routing constraints See Texas Instruments Literature No SNVA009 www ti com lit snva009 SOLDER MASK DETAILS NOT TO SCALE S...

Страница 71: ...9 2019 DSBGA 0 5 mm max height YFP0025 DIE SIZE BALL GRID ARRAY NOTES continued 4 Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release SYMM SYMM SOLDER PAS...

Страница 72: ...are subject to change without notice TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource Other reproduction and...

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