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In order to achieve a long stand-by time, the handset conserves power by “sleeping” when not in use and occasionally “waking-up”. In the
“sleep” condition, the handset supplies power only to those circuits deemed essential for proper operation such as the microcontroller (MCU)
and memory. In the “wake-up” condition, in addition to the vital circuits, the handset powers the circuits that allow it to receive data. This
function is necessary to detect if the base requires the handset to act on a condition such as an incoming call. With this sleep/wake-up
sequence, this Machine handset is able to achieve an impressive seven day stand-by time.

4.2.1

Power Control
There are five power lines used in the handset. Four of the lines are supplied by a single 3VDC adjustable regulator and one line
comes straight off the battery. The power lines give the handset the flexibility of powering down circuits that are not needed to
minimize current consumption and to prevent audio signals from interfering with data and vice-versa. The MCU controls the switched
power lines through transistors switches.

The five power lines are labeled MCU_PWR, RX_PWR, TX_PWR, V_ANA and V_BAT. MCU_PWR is a full-time 3VDC regu-
lated line that is used to supply all of the handset circuits except for those in the RF module and microphone biasing. RX_PWR is a
switched in 3VDC regulated line that supplies the RF circuits associated with receiving and demodulating an incoming RF signal.
The TX_PWR is similar to the RX_PWR, but supplies the circuits associated with modulating and transmitting the RF signal.
V_ANA is also a switched 3VDC regulated supply and is used to bias the microphone. This supply is turned on with the TX_PWR
supply and is implemented to isolate noise from the RF section from the microphone circuits. And flatly, V_BAT is a direct line from
the battery and thus can vary from about 3VDC to 4VDC. The V_BAT supply is used to power the ringer which requires a good
voltage and current supply to operate properly. The ringer can also produce noise that can find its way onto its power supply so the
V_BAT line provides some isolation from the rest of the handset’s circuits.

4.2.2

Battery Maintenance and Low Voltage Detect
The battery is recharged via a cradle contact on the base. The handset has a corresponding charge contact at the bottom of the handset
chassis. The charge contact is protected from a short to ground by a diode placed in line with the battery connection. The diode
prevents the battery from discharging from the charge contact. Protection from ESD is afforded by a bypass capacitors installed at the
charge contact.

When the battery voltage drops below the minimum working voltage of the MCU, the phone will not function properly again if the
MCU is not properly reset. Therefore, circuits have been implemented to insure that the battery has sufficient charge for proper
operation.

The heart of the battery maintenance circuit and for that matter the power supply, is the adjustable regulator mentioned earlier. The
regulator features an integral reference to which battery charge is compared to. If the battery voltage drops below 3.3VDC a low
battery line is activated to inform the MCU. The latter action in turn causes the MCU to notify the user by activating the low battery
LED and by producing an audible tone. If the battery falls below 2.8VDC, the regulator turns off the power to prevent the handset
from being used while it operates improperly. A slight hysterics has been designed into the point where the low battery indicators are
turned off when charging. The low battery indicators are disable when the battery voltage exceeds 3.35VDC.

4.3 Audio Path

Audio circuits are necessary to condition speech for RF transmission and reception. The conditioning includes amplification, filtering, pre-
emphasis/de-emphasis and compression/expansion, all of which ensures that the speech is received and transmitted with maximum clarity
and legibility.

Pre-emphasis/de-emphasis is used to improve signal-to-noise ratio which is, as a consequence of frequency or phase modulation, degraded
at high audio frequencies. Compression/expansion is also used to improve the perceived signal-to-noise ratio by reducing the noise vulner-
ability of low level signals. The compression process amplifies low level signals more than it does for high level signals. Thus, by compress-
ing the dynamic range of the audio before transmission, noise picked up during transmission has less of an effect on the low Level signals.
Afire receiving the transmission, the expansion process maintains this improved signal-to-noise ratio while restoring the low level signals
back to their original levels.

The audio circuits are implemented around a compandor IC (TA31103F). The IC provides compression/expansion, amplification and muting
all in a clean, simple package. The IC is a good compromise between the parts cost, flexibility, size, and performance. Refer to the IC’s data
sheets for a detailed description of its operation.

4.3.1

Receive Direction (from RF module to ear piece receiver)
The receive audio is transmitted from the base to the handset using frequency modulation (FM).  The FM signal from the base enters
the handset’s RF module where the signal undergoes filtering, downconversion and finally demodulation. The baseband audio then
leaves the RF module via the demodulator IC at about -16dBv (for a deviation of +/- 25kHz). From the RF module, the audio is then
fed into a buffer amplifier where the audio is lowpass filtered and directed to both an audio channel and a data channel. The audio
undergoes this split in directions after the buffer amplifier because both data and audio share the same circuits upto and including the
buffer amplifier. The filtering at the buffer amplifier provided some rejection at higher frequencies (> 40kHz).

The buffer amplifier output is connected to an active third order lowpass filter with a - 3dB cut-off set at about 5.5kHz. The filter has
unity gain in its passband. The filtered audio is then passed to an active de-emphasis filter where de-emphasis occurs across the entire
audio band (300Hz to 3,400kHz) at a rate of 6dB/octave or 20dB/decade. After de-emphasis, the audio undergoes the expansion
process and is passed through a transmit audio level control. The level control which has a range of about 20dB, is used to set the

Содержание SPP-930

Страница 1: ...MICROFILM SPP A940 SPECIFICATIONS CORDLESS TELEPHONE Canadian Model SERVICEMANUAL ...

Страница 2: ...ds Handset Section 54 6 8 Schematic Diagram Handset Section 57 7 EXPLODED VIEWS 7 1 Base Unit Section 62 7 2 Handset Section 63 8 ELECTRICAL PARTS LIST 64 SAFETY RELATED COMPONENT WARNING COMPONENTS IDENTIFIED BY MARK OR DOTTED LINEWITH MARK ON THE SCHEMATIC DIAGRAMS AND IN THE PARTS LIST ARE CRITICAL TO SAFE OPERATION REPLACE THESE COMPONENTS WITH SONY PARTS WHOSE PART NUMBERS APPEAR AS SHOWN IN ...

Страница 3: ... USE lamp DC IN 10V jack POWER lamp LINE Telephone jack VOLUME button SELECT button DIAL MODE switch TIME SET button ª Display º ERASE button REPEAT button RECORD MEMO button 1 TALK lamp 2 VOL Volume H L switch 3 PMG Program button 4 Dialing keys 5 Charge terminals 6 Microphone 7 CHANNEL button 8 REDIAL button 9 SPEED DIAL button º OFF button BATT LOW lamp Speaker Antenna TALK FLASH button 1 2 3 4...

Страница 4: ... 4 This section is extracted from instruction manual ...

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Страница 12: ...e disassembly procedure in the numerical order given 2 1 BATTERY PACK REMOVAL HANDSET SECTION 1 2 Battery pack BP T23 Lid Battery case 3 Screws BTP 3x10 2 2 CABINET REAR HAND REMOVAL 1 2 1 2 3 Cabinet Front hand Cabinet Rear hand Claws Claws ...

Страница 13: ... 13 2 3 HAND MAIN BOARD REMOVAL 3 Screws P 2x8 1 Screw BTP 3x12 4 Cabinet Front hand Hand main board 2 Screw BTP 3x12 Antenna ANT1 Spring Washer ...

Страница 14: ...audio signals onto the RF carriers The following section will outline the transmit frequencies used by this Machine RF sections as well as the corresponding LO frequencies which are used for the receivers This is followed by the Block diagram and a block by block functional description of the modules 1 1 Frequency Tables This section outlines the frequencies and corresponding channel numbers used ...

Страница 15: ...locks in the RF module in detail All references to part numbers correspond to the handset schematic DETAILED OPERATION 2 1 Antenna Section 2 1 1 Antenna The antenna is a device which allows effective conversion of energy from air to the RF module circuitry The base antenna is a 1 2 wave with approximately 0dB gain relative to an isotropic radiator while the handset is a l 4 wave with approximately...

Страница 16: ...e attenuated by at least 25dB before entering the receive section of the phone A plot of the low band filter is shown below Figure 2 Low band Ceramic filer response For this filter the insertion loss is less than 3dB at 902 to 905MHz while the 925 928MHZ band has 25dB attenuation This filter is used for the RX filter in the handset or the TX filter in the base The high band filter characteristic i...

Страница 17: ...39R The LO and RF signals are placed on the gates of the FET and the IF signal is coupled off of the drain The FET provides conversion gain along with adequate power handling characteristics Both the RF and LO ports are shorted to ground by rectangular microstrip inductors These inductors provide a high impedance at both the RF and LO frequencies while presenting a very low impedance at the IF fre...

Страница 18: ...uld nominally be 2 2V for the base and 1 2V for the handset when a signal is center tuned The recovered audio signal from the demodulator has a peak to peak amplitude of approx 0 5V for 50kHz p p modulation One path from the recovered audio port is filtered through a lowpass data filter and passed back into the data comparator The output of the data comparator is fed into the MPU for processing Th...

Страница 19: ... signal across the tip and ring is detected by anAC coupled opto coupler Zener diodes are used to set the threshold detection voltage and to meet the no ring response impedance requirement for EIA 470 Resistors limit the current flow into the opto coupler and maintain the necessary ringing impedance as specified in EIA 470 The diode across the opto coupler input provides a discharge path for the c...

Страница 20: ...is placed in the charger Note the spare battery does not supply any power to the base circuits in the event of a power failure 3 3 4 ESD Protection The charge contacts for the spare battery and handset are vulnerable to ESD because they of their exposure to the outside world Since the contacts are connected directly to the base s circuits ESD can damage some of the base s internal circuits if no p...

Страница 21: ...nal enters a pre emphasis circuit with an integrated level control The pre emphasis like the de emphasis is set at a rate of 6dB octave or 20dB decade throughout the entire audio band 300Hz to 3 400Hz The level control as in the transmit direction has a range of about 12dB and is used to set the level applied to the RF module This level control thus sets the FM deviation and is necessary to compen...

Страница 22: ...he default channel and the security code so that they are not lost in the event of power failure 3 5 6 ATE Interface ATE test points are available on the base to facilitate ATE testing The ATE uses these test points to access the signals required to complete a base alignment Base to ATE communication is accomplished through a dedicated port on the MCU which is connected directly to a charge contac...

Страница 23: ...ich battery charge is compared to If the battery voltage drops below 3 3VDC a low battery line is activated to inform the MCU The latter action in turn causes the MCU to notify the user by activating the low battery LED and by producing an audible tone If the battery falls below 2 8VDC the regulator turns off the power to prevent the handset from being used while it operates improperly A slight hy...

Страница 24: ...he audio goes through another stage of amplification and light lowpass filtering before being passed to an active 3rd order lowpass filter The filter s 3dB cut off is set to approximately 6 7kHz and has unity gain in the passband The 3rd order lowpass filter s output is then coupled to the RF module s frequency modulator 4 4 MCU Circuits A relatively inexpensive CMOS 8K x 4 bit MCU LSC442349DW is ...

Страница 25: ...UENCY 1 Hz FREQUENCY 2 Hz l 2 500 1 250 2 2 500 625 3 1 250 625 4 312 The MCU s ringing tones are coupled to the ringer via transistors These transistors are biased to insure that ringer output is consis tent from handset to handset 4 4 6 Sleep Timer The sleep timer wakes up the handset from sleep mode by pulling the IRQ line on the MCU low The sleep timer circuit is made up of a compactor an RC n...

Страница 26: ...D ON Tx Power On Rx Power On 2 Base manual test mode user interface To enter test mode Set the dial mode to TONE then put the power on with pressing and holding the PAGE button POWER IN USE and CHARGE LEDs are turn on and the unit is in Mode 1 of the test mode ITAD block is not in test mode Turn on Tx Rx at channel 6 1 10 Unmute audio To change the channel in test mode 1 press page button Charge M...

Страница 27: ...ect the FM rf signal generator to ANTENNA point FM rf signal generator condition Carrier frequency 903 8MHz Modulation 1kHz Deviation 25kHz Output level 50 dBm EMF 2 Connect the modulation meter to IC6 pin 3 Adjust the R114 for 21dBV 1dB reading on the modulation meter 5 1 BASE UNIT SECTION Perform the adjustment at 6CH RX 926 55MHz TX 903 8MHz by removing R1 as a rule 4 TX DEVIATION Adjustment Pr...

Страница 28: ... DEVIATION Adjustment C152 4 0MHz CLOCK REFERENCE Adjustment C151 QUAD TUNE VOLTAGE Adjustment R 1 C2 C1 IC6 R117 C93 R74 C116 IC1 IC5 IC3 1 14 1 12 13 24 18 15 28 26 IC3 pin 4 0MHz CLOCK REFERENCE Adjustment IC6 pin DEMODULATION LEVEL Adjustment ANTENNA point RX AUDIO QUAD TUNE VOLTAGE Adjustment GND ATE TERMINAL RX AUDIO TX LOOP V RX LOOP V TX PWR ATE I O ...

Страница 29: ...ure 1 Connect the FM rf signal generator to ANTENNA point FM rf signal generator condition Carrier frequency 903 8MHz Modulation 1kHz Deviation 25kHz Output level 50 dBm EMF 2 Connect the modulation meter to RECEIVER ATE terminal 3 Adjust the R113 for 19dBV 1dB reading on the modulation meter 5 2 HANDSET SECTION Perform the adjustment at 6CH RX 903 8MHz TX 926 55MHz by removing R1 as a rule 4 TX D...

Страница 30: ...C92 4 0MHz CLOCK REFERENCE Adjustment RX AUDIO QUAD TUNE VOLTAGE Adjustment C87 QUAD TUNE VOLTAGE Adjustment RECEIVER DEMODULATION LEVEL Adjustment R113 DEMODULATION LEVEL Adjustment R119 TX DEVIATION Adjustment ANTENNA point IC3 IC7 IC5 ATE TERMINAL Connect Location HAND MAIN BOARD SIDE A Adjustment Location HAND MAIN BOARD SIDE A ...

Страница 31: ...ystem clock oscillator 4kHz 28 Vdd Power supply terminal 3V 6 1 EXPLANATION OF IC TERMINALS Pin No Pin name I O Description 1 RESET I Reset terminal 2 IRQ I External interrupt terminal 3 8 PA7 2 O Used for DTMF genaration 9 EEPROM SEL O Chip select for EEPROM 10 PLL EN O Chip select for PLL 11 SDO O Serial data output 12 SDI I Serial data input 13 SCK O Serial clock 14 VSS Power supply terminal Gr...

Страница 32: ... supply terminal 5V 22 36 A14 A0 I O Address bus 37 RINGER DET I Ringer signal detect 38 PARALLEL DET I Parallel phone detect 39 DVSS2 Power supply terminal for digital Ground 40 R IN I RC oscillator input terminal 41 R OUT O RC oscillator output terminal 42 DVDD2 Power supply terminal for digital 5V 43 Not used Open 44 SD IN I Serial data input from flash ROM 45 SD OUT O Serial data output to fla...

Страница 33: ...t side 78 VREF Reference voltage for analog 79 SPO1 O Speaker amplifier output side Not used 80 SPO1 O Speaker amplifier output side 81 SPI1 I Speaker amplifier input 1 82 DAO O D A converter output Not used 83 SPO2 O Speaker amplifier output 2 side Not used 84 SPO2 O Speaker amplifier output 2 side 85 AVSS2 Power supply terminal for analog Ground 86 AVDD2 Power supply terminal for analog 5V 87 89...

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Страница 42: ...MP DATA SLICER MIX OUT VCC1 IF IN IF DEC1 IF DEC2 IF OUT VCC2 LIM IN LIM DEC1 LIM DEC2 VCC N C VCC N C VCC N C VCC N C OUAD COIL DEMOD 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 LO IN LO EMIT VEE1 CAR DET RSSI VEE2 DS HOLD DATA OUT DS GND DS IN DEMOD OUAD COIL Bias Bias Mixer IF AMP LIM AMP DATA SLICER RF IN RF IN2 MIX OUT VCC1 IF IN IF DEC1 IF DEC2 IF OUT VCC2 LIM IN LIM DEC1 ...

Страница 43: ...13 12 11 10 9 8 OUTPUT 1 INPUT 1 INPUT 1 V INPUT 2 INPUT 2 OUTPUT 2 OUTPUT 4 INPUT 4 INPUT 4 GND INPUT 3 INPUT 3 OUTPUT 3 IC11 LP2953IM HANDSET SECTION IC2 TB31202FN BASE UNIT SECTION IC2 TB31202FN HANDSET SECTION 2 3 5 4 6 7 8 9 10 1 11 12 13 14 15 16 BUF BUF PROGRAMABLE DIVIDER PHASE COMPARATOR OUTPUT SWITCH L OSC REFERENCE DIVIDER LOCK DET CONTROL CIRCUIT 1 2 1 2 1 2 BUF 1 32 33 1 32 33 PHASE C...

Страница 44: ... 10 14 11 12 13 not supplied SP2 15 19 16 16 17 18 20 21 ANT2 1 A 3672 335 A BASE KEY BOARD COMPLETE 2 1 771 247 11 SWITCH RUBBER KEY 3 3 019 142 01 LENS ANSWER LED 4 3 019 140 01 BUTTON FUNCTION 5 3 019 141 01 LENS LED 6 A 3317 048 A BASE TEL BOARD COMPLETE 7 A 3672 336 A DSP BOARD COMPLETE 8 3 018 752 01 HOLDER MIC 9 3 019 214 01 HOLDER MICROPHONE UNIT 10 3 025 855 01 CABINET UPPER BASE 11 3 011...

Страница 45: ... RECEIVER 57 3 372 738 01 GASKET RECEIVER TWN 58 3 016 284 01 KNOB VOL 59 3 016 289 01 CASE FRONT SHIELD 60 A 3672 393 A HAND MAIN BOARD COMPLETE 61 3 012 337 01 CASE REAR SHIELD 62 3 016 281 01 CABINET REAR HAND 63 3 016 279 01 LID BATTERY CASE 64 3 016 288 01 HOLDER MIC 65 3 016 290 01 TERMINAL CHARGE H S 66 3 016 291 01 TERMINAL CHARGE H S 67 3 016 285 01 HOLDER BUZZER 68 3 020 780 01 TAPE COND...

Страница 46: ... 1 10W R13 1 216 045 00 METAL CHIP 680 5 1 10W R14 1 216 045 00 METAL CHIP 680 5 1 10W R15 1 216 041 11 METAL CHIP 470 5 1 10W A 3317 047 A BASE RF BOARD COMPLETE 3 011 466 01 CASE BASE SHIELD 7 685 104 19 SCREW BTP 2X6 TYPE2 CAPACITOR C1 1 162 913 11 CERAMIC CHIP 8PF 0 5PF 50V C2 1 162 909 11 CERAMIC CHIP 4PF 0 25PF 50V C3 1 162 912 11 CERAMIC CHIP 7PF 0 5PF 50V C4 1 162 933 11 CERAMIC CHIP 2 5PF...

Страница 47: ... 913 11 CERAMIC CHIP 8PF 0 5PF 50V C94 1 164 004 11 CERAMIC CHIP 0 1uF 10 25V C100 1 162 963 11 CERAMIC CHIP 680PF 10 50V C101 1 164 173 11 CERAMIC CHIP 0 0039uF 10 50V C102 1 162 970 11 CERAMIC CHIP 0 01uF 10 25V C103 1 162 977 11 CERAMIC CHIP 0 0018uF 10 50V C104 1 165 176 11 CERAMIC CHIP 0 047uF 10 16V C107 1 162 957 11 CERAMIC CHIP 220PF 5 50V C108 1 162 921 11 CERAMIC CHIP 33PF 5 50V C109 1 1...

Страница 48: ...ETAL CHIP 15K 0 5 1 10W R39 1 216 675 11 METAL CHIP 10K 0 5 1 10W R40 1 216 635 11 METAL CHIP 220 0 5 1 10W R41 1 216 817 11 METAL CHIP 470 5 1 16W R42 1 216 827 11 METAL CHIP 3 3K 5 1 16W R43 1 216 840 11 METAL CHIP 39K 5 1 16W R44 1 216 821 11 METAL CHIP 1K 5 1 16W R45 1 216 833 11 METAL CHIP 10K 5 1 16W R46 1 216 677 11 METAL CHIP 12K 0 5 1 10W R47 1 218 294 11 RES CHIP 30K 5 1 16W R48 1 219 57...

Страница 49: ...1 102 106 00 CERAMIC 100PF 10 50V C96 1 102 106 00 CERAMIC 100PF 10 50V C97 1 102 106 00 CERAMIC 100PF 10 50V C98 1 102 106 00 CERAMIC 100PF 10 50V C99 1 161 039 00 CERAMIC 0 001uF 10 50V C106 1 164 004 11 CERAMIC CHIP 0 1uF 10 25V C131 1 136 193 11 FILM 0 47uF 5 250V C132 1 126 795 11 ELECT 10uF 20 25V C133 1 126 795 11 ELECT 10uF 20 25V C134 1 115 872 11 ELECT 2 2uF 20 50V C135 1 161 772 11 CERA...

Страница 50: ...IP 47PF 5 50V C32 1 162 923 11 CERAMIC CHIP 47PF 5 50V C33 1 162 923 11 CERAMIC CHIP 47PF 5 50V C35 1 164 156 11 CERAMIC CHIP 0 1uF 25V C36 1 162 923 11 CERAMIC CHIP 47PF 5 50V C37 1 162 923 11 CERAMIC CHIP 47PF 5 50V C38 1 164 156 11 CERAMIC CHIP 0 1uF 25V C39 1 164 156 11 CERAMIC CHIP 0 1uF 25V C40 1 162 923 11 CERAMIC CHIP 47PF 5 50V C41 1 164 156 11 CERAMIC CHIP 0 1uF 25V C42 1 162 964 11 CERA...

Страница 51: ...11 METAL CHIP 10K 5 1 16W R41 1 216 841 11 METAL CHIP 47K 5 1 16W R42 1 216 837 11 METAL CHIP 22K 5 1 16W R43 1 216 841 11 METAL CHIP 47K 5 1 16W R44 1 216 841 11 METAL CHIP 47K 5 1 16W R45 1 216 841 11 METAL CHIP 47K 5 1 16W R46 1 216 841 11 METAL CHIP 47K 5 1 16W R47 1 216 841 11 METAL CHIP 47K 5 1 16W R48 1 216 841 11 METAL CHIP 47K 5 1 16W R49 1 216 841 11 METAL CHIP 47K 5 1 16W R50 1 216 841 ...

Страница 52: ...25PF 50V C72 1 162 912 11 CERAMIC CHIP 7PF 0 5PF 50V C73 1 162 909 11 CERAMIC CHIP 4PF 0 25PF 50V C74 1 162 910 11 CERAMIC CHIP 5PF 0 25PF 50V C75 1 162 919 11 CERAMIC CHIP 22PF 5 50V C76 1 104 700 11 CERAMIC CHIP 0 027uF 10 16V C77 1 164 315 11 CERAMIC CHIP 470PF 5 50V C78 1 164 217 11 CERAMIC CHIP 150PF 5 50V C79 1 164 217 11 CERAMIC CHIP 150PF 5 50V C80 1 162 909 11 CERAMIC CHIP 4PF 0 25PF 50V ...

Страница 53: ...CHIP 56 5 1 16W R7 1 216 817 11 METAL CHIP 470 5 1 16W R8 1 216 841 11 METAL CHIP 47K 5 1 16W R9 1 216 809 11 METAL CHIP 100 5 1 16W R10 1 216 805 11 METAL CHIP 47 5 1 16W R11 1 216 823 11 METAL CHIP 1 5K 5 1 16W R12 1 216 852 11 METAL CHIP 390K 5 1 16W R13 1 216 813 11 METAL CHIP 220 5 1 16W R14 1 216 815 11 METAL CHIP 330 5 1 16W R15 1 216 821 11 METAL CHIP 1K 5 1 16W R16 1 216 847 11 METAL CHIP...

Страница 54: ...1 16W R108 1 216 848 11 METAL CHIP 180K 5 1 16W R109 1 216 848 11 METAL CHIP 180K 5 1 16W R110 1 216 848 11 METAL CHIP 180K 5 1 16W R111 1 216 845 11 METAL CHIP 100K 5 1 16W R112 1 216 856 11 METAL CHIP 820K 5 1 16W R114 1 216 821 11 METAL CHIP 1K 5 1 16W R115 1 216 844 11 METAL CHIP 82K 5 1 16W R116 1 216 856 11 METAL CHIP 820K 5 1 16W R117 1 216 815 11 METAL CHIP 330 5 1 16W R120 1 216 831 11 ME...

Страница 55: ...767 11 GUIDE QUICK START 7 621 849 40 SCREW WOOD R 3 1X25 HARDWARE LIST 1 7 623 208 22 SW 3 TYPE 2 2 7 685 105 19 SCREW P 2X8 TYPE2 NON SLIT 4 7 685 547 19 SCREW BTP 3X10 TYPE2 N S 5 7 685 548 19 SCREW BTP 3X12 TYPE2 N S 6 7 685 104 19 SCREW BTP 2X6 TYPE2 7 7 685 646 79 SCREW P 3X8 TYPE2 NON SLIT 8 7 685 534 14 SCREW BTP 2 6X8 TYPE2 N S The components identified by mark or dotted line with mark ar...

Страница 56: ... 74 9 925 737 31 Sony Corporation Personal Mobile Communication Company 98E02042 1 Printed in Japan 1998 5 Published by Quality Assurance Dept SPP A940 ...

Страница 57: ...SERVICE MANUAL SUPPLEMENT 1 File this Supplement with the Service Manual Subject Change of DSP Board ECN CP800943 Canadian Model Serial No 0 101 999 and later SPP A940 ...

Страница 58: ...4 Q14 C 1 ZD1 H 4 ZD2 C 3 Ref No Location r Semiconductor Location Note X parts extracted from the component side r Through hole b Pattern from the side which enables seeing The other layers patterns are not indicated Caution Pattern face side Parts on the pattern face side seen from Conductor Side the pattern face are indicated Parts face side Parts on the parts face side seen from Component Side...

Страница 59: ...e is dc10V and fed with regulated dc power supply from external power voltage jack J8 Voltages and waveforms are dc with respect to ground under no signal conditions Voltages are taken with a VOM Input impedance 10 MΩ Voltage variations may be noted due to normal produc tion tolerances Waveforms are taken with a oscilloscope Voltage variations may be noted due to normal produc tion tolerances Circ...

Страница 60: ...A22130 DSP 9 923 737 86 Sony Corporation Personal Mobile Communication Company Ref No Part No Description Remark Ref No Part No Description Remark DSP 98L02042 1 Printed in Japan 1998 12 Published by Quality Assurance Dept SPP A940 8 IC2 8 719 018 89 PHOTO COUPLER LTV817 C IC3 8 759 579 40 IC LM340MPX 5 0 IC4 8 759 441 31 IC MC14053BDTR2 IC6 8 759 489 41 IC TC88411BF 121 IC7 8 759 579 39 IC LH531V...

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