
4.1.9.5 Ultra-low Frequency RC Oscillator (ULFRCO)
Table 4.25. Ultra-low Frequency RC Oscillator (ULFRCO)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Oscillation frequency
f
ULFRCO
0.95
1
1.07
kHz
4.1.10 Flash Memory Characteristics
Table 4.26. Flash Memory Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Flash erase cycles before
failure
EC
FLASH
10000
—
—
cycles
Flash data retention
RET
FLASH
10
—
—
years
Word (32-bit) programming
time
t
W_PROG
Burst write, 128 words, average
time per word
20
26.3
30
µs
Single word
62
68.9
80
µs
Page erase time
t
PERASE
20
29.5
40
ms
t
MERASE
20
30
40
ms
t
DERASE
—
56.2
70
ms
I
ERASE
Page Erase
—
—
2.0
mA
Write current
I
WRITE
—
—
3.5
mA
Supply voltage during flash
erase and write
V
FLASH
1.62
—
3.6
V
Note:
1. Flash data retention information is published in the Quarterly Quality and Reliability Report.
2. From setting the ERASEPAGE bit in MSC_WRITECMD to 1 until the BUSY bit in MSC_STATUS is cleared to 0. Internal setup
and hold times for flash control signals are included.
3. Mass erase is issued by the CPU and erases all flash.
4. Device erase is issued over the AAP interface and erases all flash, SRAM, the Lock Bit (LB) page, and the User data page Lock
Word (ULW).
5. From setting the DEVICEERASE bit in AAP_CMD to 1 until the ERASEBUSY bit in AAP_STATUS is cleared to 0. Internal setup
and hold times for flash control signals are included.
6. Measured at 25 °C.
BGM13S Blue Gecko
Bluetooth
®
SiP Module Data Sheet
Electrical Specifications
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