Sharp LC-19LE510E, Руководство по обслуживанию

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LC-19LE510
LC-22LE510
LC-24LE510
12. DDR2 SDRAM 8M × 4 BANKS × 16 BIT (W9751G6JB) (U154, U155)
12.1. General Description
The W9751G6JB is a 512M bits DDR2 SDRAM, organized as 8,388,608 words × 4 banks × 16 bits. This device
achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for general applications.
W9751G6JB is sorted into the following speed grades: -18, -25 and -3. The -18 is compliant to the DDR2-
1066/CL7 specification. The -25 is compliant to the DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specification.
The -3 is compliant to the DDR2-667 (5-5-5) specification. All of the control and address inputs are
synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of
differential clocks (CLK rising and CLK falling). All I/Os are synchronized with a single ended DQS or
differential DQS- DQS pair in a source synchronous fashion.
12.2. Features

Power Supply: VDD, VDDQ = 1.8 V± 0.1 V

Double Data Rate architecture: two data transfers per clock cycle

CAS Latency: 3, 4, 5, 6 and 7

Burst Length: 4 and 8

Bi-directional, differential data strobes are transmitted / received with data
 Edge-aligned with Read data and center-aligned with Write data

DLL aligns DQ and DQS transitions with clock

Differential clock inputs (CLK and CLK )

Data masks (DM) for write data

Commands entered on each positive CLK edge, data and data mask are referenced to both
edges of DQS

Posted CAS programmable additive latency supported to make command and data bus
efficiency
 Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)

Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better
signal quality

Auto-precharge operation for read and write bursts

Auto Refresh and Self Refresh modes
 Precharged Power Down and Active Power Down

Write Data Mask

Write Latency = Read Latency - 1 (WL = RL - 1)

Interface: SSTL_18
12.3. Electrical Characteristics
11.
11.3
11.1
11.2