65
LC-19LE510
LC-22LE510
LC-24LE510
21. FDC642
21.1.
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild’s advanced PowerTrench
® process that
has been especially tailored to minimize on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for
applications where the larger packages are impractical.
21.2.
Features
Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
Fast switching speed
Low gate charge (11nC typical)
High performance trench technology for extremely low rDS(on)
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1
mm thick)
Termination is Lead-free and RoHS Compliant
21.3.
Pinning
20.3
20.2
20.1
20.
Содержание LC-19LE510E
Страница 22: ...22 LC 19LE510 LC 22LE510 LC 24LE510 1 1 General Block Diagram 1 1 General Block Diagram ...
Страница 30: ...30 LC 19LE510 LC 22LE510 LC 24LE510 4 4 Frequency response ...
Страница 32: ...32 LC 19LE510 LC 22LE510 LC 24LE510 5 3 Absolute Ratings 5 3 1 Electrical Characteristics ...
Страница 33: ...33 LC 19LE510 LC 22LE510 LC 24LE510 5 3 2 Operating Specifications ...
Страница 34: ...34 LC 19LE510 LC 22LE510 LC 24LE510 5 4 Pinning ...
Страница 36: ...36 LC 19LE510 LC 22LE510 LC 24LE510 6 3 2 Operating Specifications 6 4 Pinning ...
Страница 38: ...38 LC 19LE510 LC 22LE510 LC 24LE510 Ì µ µ ò Ú ĞÉîê ĞÉîé µ º ò Ú ĞÍïêô ĞÍïéô ĞÍêğ µ µ ò ...
Страница 51: ...51 LC 19LE510 LC 22LE510 LC 24LE510 12 4 Pinning 11 4 ...
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Страница 76: ...76 LC 19LE510 LC 22LE510 LC 24LE510 STBY_ON OFF should be low for standby on condition please check R1677 ...
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