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S3F84B8_UM_REV 1.00
19 EMBEDDED FLASH MEMORY INTERFACE
19-2
19.1.3 USER PROGRAM MODE
This mode supports sector erase, byte programming, byte read, and protection mode (Hard Lock Protection).
S3F84B8 has an internal pumping circuit to generate high voltage. Therefore, there is no need to supply high
programming voltage to the Vpp (Test) pin. To program flash memory in this mode, several control registers are
used.
19.1.4 SMART OPTION
Smart option specifies the Program Memory option for starting condition of the chip. The Program Memory
Addresses used by the Smart option range from 003CH to 003FH. However, S3F84B8 only uses 003FH. The
default value of Smart option bits in Program Memory is 0FFH. Before executing the Program Memory code, you
can set the Smart option bits according to the hardware option you want to select.
NOTES :
1 . The unused bits of 3CH, 3DH, 3EH, 3FH must be logic "1".
2 . When LVR is enabled, LVR level must be set to appropriate value .
3 . P0.2 has only input (without pull -up) function when sets 003F.2 as 0.
4 . You must set P0.0,P0.1,P0.2 function on smart option. For example, if you select XIN (P0 .0)/XOUT (P0.1)/ nRESET(P0.2)
function by smart option , you can’t change them to Normal I/O after reset operation.
LVR enable
or disable bit:
0 = Disable
1 = Enable
LVR level selection
101 = 1.9 V
110 = 2.3 V
100 = 3.0 V
001 = 3.6V
011 = 3.9 V
ROM Address: 003FH
.7
.6
. 5
.4
.3
.2
.1
.0
MSB
LSB
Not used
P0.2/nRESET pin
selection bit:
0 = P0.2 pin enable
1 = nRESET
Pin enable
Oscillation selection bit :
00 = External crystal (Xin/Xtout pin
enable )
01 = External RC(Xin /Xtout pin enable)
10 = Internal oscillator (0.5MHz)
(P0.0,P0.1 are normal IOs)
11 = Internal oscilator (8 MHz)
(P0.0,P0.1 are normal IOs)
ROM Address : 003CH
.7
.6
. 5
.4
.3
.2
. 1
.0
MSB
LSB
ROM Address: 003DH
.7
.6
. 5
.4
.3
.2
. 1
.0
MSB
LSB
Not used
Not used
ROM Address: 003EH
.7
.6
.5
.4
.3
.2
.1
.0
MSB
LSB
Not used
Figure 19-1 Smart Option