Rev.2.00 Nov 28, 2005 page 296 of 378
REJ09B0124-0200
M16C/6N Group (M16C/6NK, M16C/6NM)
22. Electric Characteristics (Normal-ver.)
Under development
This document is under development and its contents are subject to change.
Table 22.5 Electrical Characteristics (2)
(1)
Mask ROM
f(BCLK) = 24MHz,
PLL operation,
No division
On-chip oscillation,
No division
Flash Memory f(BCLK) = 24MHz,
PLL operation,
No division
On-chip oscillation,
No division
Flash Memory f(BCLK) = 10MHz,
Program
VCC = 5V
Flash Memory f(BCLK) = 10MHz,
Erase
VCC = 5V
Mask ROM
f(BCLK) = 32kHz,
Low power dissipation
mode, ROM
(2)
Flash Memory f(BCLK) = 32kHz,
Low power dissipation
mode, RAM
(2)
f(BCLK) = 32kHz,
Low power dissipation
mode,
Flash memory
(2)
Mask ROM
On-chip oscillation,
Flash Memory Wait mode
f(BCLK) = 32kHz,
Wait mode (3),
Oscillation capacity High
f(BCLK) = 32kHz,
Wait mode (3),
Oscillation capacity Low
Stop mode,
Topr = 25
°
C
NOTES:
1. Referenced to VCC = 3.0 to 5.5V, VSS = 0V at Topr = –40 to 85
°
C, f(BCLK) = 24MHz unless otherwise specified.
2. This indicates the memory in which the program to be executed exists.
3. With one timer operated using fC32.
21
1
23
1.8
15
25
25
25
420
50
8.5
3.0
0.8
Power Supply
Current
(VCC
= 3.0 to 5.5V)
I
CC
mA
mA
mA
mA
mA
mA
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
Measuring Condition
Standard
Min.
Unit
37
39
3.0
Parameter
Symbol
Output pins are open
and other pins are VSS.
Typ.
Max.