Rev.2.00 Nov 28, 2005 page 3 of 378
REJ09B0124-0200
M16C/6N Group (M16C/6NK, M16C/6NM)
1. Overview
Under development
This document is under development and its contents are subject to change.
Table 1.2 Performance Outline of M16C/6N Group (128-pin Version: M16C/6NM)
Item
Performance
Normal-ver.
T/V-ver.
CPU
Number of Basic Instructions 91 instructions
Minimum Instruction
41.7ns (f(BCLK) = 24MHz,
50.0ns (f(BCLK) = 20MHz,
Execution Time
1/1 prescaler, without software wait) 1/1 prescaler, without software wait)
Operation Mode
Single-chip, memory expansion Single-chip mode
and microprocessor modes
Address Space
1 Mbyte
Memory Capacity
See
Table 1.3 Product List
Peripheral
Port
Input/Output: 113 pins, Input: 1 pin
Function
Multifunction Timer
Timer A: 16 bits
✕
5 channels
Timer B: 16 bits
✕
6 channels
Three-phase motor control circuit
Serial Interface
3 channels
Clock synchronous, UART, I
2
C-bus
(1)
, IEBus
(2)
4 channels
Clock synchronous
A/D Converter
10-bit A/D converter: 1 circuit, 26 channels
D/A Converter
8 bits
✕
2 channels
DMAC
2 channels
CRC Calculation Circuit
CRC-CCITT
CAN Module
2 channels with 2.0B specification
Watchdog Timer
15 bits
✕
1 channel (with prescaler)
Interrupt
Internal: 34 sources, External: 12 sources
Software: 4 sources, Priority level: 7 levels
Clock Generating Circuit
4 circuits
• Main clock oscillation circuit (*)
• Sub clock oscillation circuit (*)
• On-chip oscillator
• PLL frequency synthesizer
(*) Equipped with a built-in feedback resistor
Oscillation Stop Detection
Main clock oscillation stop and re-oscillation detection function
Function
Electrical
Supply Voltage
VCC = 3.0 to 5.5V (f(BCLK) = 24MHz, VCC = 4.2 to 5.5V (f(BCLK) = 20MHz,
Characteristics
1/1 prescaler, without software wait) 1/1 prescaler, without software wait)
Power
Mask ROM
21mA (f(BCLK) = 24MHz,
-
Consumption
PLL operation, no division)
Flash Memory 23mA (f(BCLK) = 24MHz,
21mA (f(BCLK) = 20MHz,
PLL operation, no division)
PLL operation, no division)
Mask ROM
3µA (f(BCLK) = 32kHz, Wait mode, Oscillation capacity Low)
Flash Memory 0.8µA (Stop mode, Topr = 25°C)
Flash Memory Program/Erase Supply Voltage 3.0 ± 0.3V or 5.0 ± 0.5V
5.0 ± 0.5V
Version
Program and Erase Endurance 100 times
I/O
I/O Withstand Voltage
5.0V
Characteristics Output Current
5mA
Operating Ambient Temperature
-40 to 85°C
T version: -40 to 85°C
V version: -40 to 125°C (option)
Device Configuration
CMOS high performance silicon gate
Package
128-pin plastic mold LQFP
NOTES:
1. I
2
C-bus is a registered trademark of Koninklijke Philips Electronics N.V.
2. IEBus is a registered trademark of NEC Electronics Corporation.
option: All options are on request basis.