LTE Module Series
BG96-NA Hardware Design
BG96-NA_Hardware_Design Confidential / Released 28 / 64
Table 6: VBAT and GND Pins
Pin Name
Pin No.
Description
Min.
Typ.
Max.
Unit
VBAT_RF 52,53
Power supply for module RF
part.
3.3 3.8 4.3
V
VBAT_BB 32,33
Power supply for module
baseband part.
3.3 3.8 4.3
V
GND
3, 31, 48,50, 54,
55,58, 59,
61,62, 67~74,
79~82,89~91,
100~102
Ground -
-
-
-
3.6.2. Decrease Voltage Drop
The power supply range of the module is from 3.3Vto4.3V. Please make sure that the input voltage will
never drop below 3.3V.
To decrease voltage drop, a bypass capacitor of about 100µF with low ESR should be used, and a
multi-layer ceramic chip (MLCC) capacitor array should also be used to provide the low ESR. The main
power supply from an external application has to be a single voltage source and can be expanded to two
sub paths with star structure. The width of VBAT_BB trace should be no less than 1mm, andthe width of
VBAT_RF trace should be no less than 2mm.In principle, the longerthe VBAT trace is, the wider it will be.
Three ceramic capacitors (100nF, 33pF, 10pF) are recommended to be applied to the VBAT pins. These
capacitors should be placed close to the VBAT pins. In addition, in order to get a stable power source, it is
suggested that you should use a zener diode of which reverse zener voltage is 5.1V and dissipation
power is more than 0.5W. The following figure shows the star structure of the power supply.
Figure 7: Star Structure of the Power Supply
