FX-MG9107ZT/UC
46
1
2
4
1
2
3
4
C
D
F
A
B
E
2R
2R
2R
2R
R
R
RAM2
Point
Vmemo
Fig.1
CH1 :
6
TE
CH2 :
8
TIN
CH3 :
*
CIN
CH4 :
4
EC
During inside/outside search
CH1 :
1
FIN
CH3 :
$
EC
CH3 :
@
FG
DISC stop
Mode:Test
Mode:Test
*note
RAM memory usage monitoring function
The memory usage within the RAM can be monitored by tracking the voltage levels at the test points,
RAM0,RAM1,RAM2, on the PCB.
Divide the total volume of the RAM by 7, and express the memory usage in 3 bits (3 binary digits),
RAM0,RAM1,RAM2. The RAM0 indicates the least significant bit. If then the combination of the voltage levels
measured at the RAM0,RAM1,RAM2 is converted to an octal number, X (Oct), the memory usage within the RAM
should be expressed by "X (Oct) / 7".
It is also possible to measure the memory usage within the RAM in voltage (appx 5V at max),
by adding the R/2R ladder resistance circuit detailed in the diagram on the right.
www. xiaoyu163. com
QQ 376315150
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TEL 13942296513
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TEL 13942296513 QQ 376315150 892498299
TEL 13942296513 QQ 376315150 892498299
