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Philips Semiconductors

Product specification

 Logic level TOPFET

PIP3119-P 

 

 

INPUT CHARACTERISTICS

The supply for the logic and overload protection is taken from the input.
Limits are for -40˚C 

 T

mb

 

 150˚C; typicals are for T

mb

 = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

IS(TO)

Input threshold voltage

V

DS

 = 5 V; I

D

 = 1 mA

0.6

-

2.4

V

T

mb

 = 25˚C

1.1

1.6

2.1

V

I

IS

Input supply current

normal operation; 

V

IS

 = 5 V

100

220

400

µ

A

V

IS

 = 4 V

80

195

330

µ

A

I

ISL

Input supply current

protection latched; 

V

IS

 = 5 V

200

400

650

µ

A

V

IS

 = 3 V

130

250

430

µ

A

V

ISR

Protection reset voltage

1

reset time t

r

 

 100 

µ

s

1.5

2

2.9

V

t

lr

Latch reset time

V

IS1

 = 5 V, V

IS2

 < 1 V

10

40

100

µ

s

V

(CL)IS

Input clamping voltage

I

I

 = 1.5 mA

5.5

-

8.5

V

R

IG

Input series resistance

2

T

mb

 = 25˚C

-

33

-

k

to gate of power MOSFET

SWITCHING CHARACTERISTICS

T

mb

 = 25˚C; V

DD

 = 13 V; resistive load R

L

 = 4 

.  Refer to waveform figure and test circuit.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

t

d on

Turn-on delay time

V

IS

 = 5 V

-

25

50

µ

s

t

r

Rise time

-

50

100

µ

s

t

d off

Turn-off delay time

V

IS

 = 0 V

-

60

120

µ

s

t

f

Fall time

-

50

100

µ

s

The input voltage below which the overload protection circuits will be reset.

Not directly measureable from device terminals.

May 2001

4

Rev 1.000

Содержание Logic level TOPFET PIP3119-P

Страница 1: ...rent VIS 5 V 650 µA lamps motors solenoids heaters FEATURES FUNCTIONAL BLOCK DIAGRAM TrenchMOS output stage Current limiting Overload protection Overtemperature protection Protection latched reset by input 5 V logic compatible input level Control of output stage and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro controller ESD pr...

Страница 2: ... MOSFET is actively turned on to clamp overvoltage transients SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Inductive load turn off IDM 20 A VDD 20 V EDSM Non repetitive clamping energy Tmb 25 C 350 mJ EDRM Repetitive clamping energy Tmb 95 C f 250 Hz 45 mJ OVERLOAD PROTECTION LIMITING VALUE With an adequate protection supply provided via the input pin TOPFET can protect itself from two types of overlo...

Страница 3: ...ce IDM 10 A 52 mΩ Tmb 25 C 22 28 mΩ OVERLOAD CHARACTERISTICS VIS 5 V Tmb 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Short circuit load ID Drain current limiting VDS 13 V 28 5 43 57 A 4 4 V VIS 5 5 V 21 65 A 40 C Tmb 150 C Overload protection PD TO Overload power threshold device trips if PD PD TO 75 185 250 W TDSC Characteristic time which determines trip time1 20...

Страница 4: ...S 5 V 200 400 650 µA VIS 3 V 130 250 430 µA VISR Protection reset voltage1 reset time tr 100 µs 1 5 2 2 9 V tlr Latch reset time VIS1 5 V VIS2 1 V 10 40 100 µs V CL IS Input clamping voltage II 1 5 mA 5 5 8 5 V RIG Input series resistance2 Tmb 25 C 33 kΩ to gate of power MOSFET SWITCHING CHARACTERISTICS Tmb 25 C VDD 13 V resistive load RL 4 Ω Refer to waveform figure and test circuit SYMBOL PARAME...

Страница 5: ...DIMENSIONS mm are the original dimensions A E A1 c Notes 1 The positional accuracy of the terminals is controlled within zone L1 max 2 Mounting base configuration is not defined within the dimensions E and D Q L2 UNIT A1 b1 D1 e p mm 2 54 q Q A b 1 D c L2 max 3 0 3 8 3 6 4 3 4 1 15 0 13 5 3 30 2 79 3 0 2 7 2 6 2 2 w 0 4 0 7 0 4 15 8 15 2 0 85 0 60 1 3 1 0 4 5 4 1 1 39 1 27 6 4 5 9 10 3 9 7 L1 p1 E...

Страница 6: ...racteristics sections of this specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 2001 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the...

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