Philips Semiconductors
Product specification
Logic level TOPFET
PIP3119-P
OUTPUT CHARACTERISTICS
Limits are for -40˚C
≤
T
mb
≤
150˚C; typicals are for T
mb
= 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Off-state
V
IS
= 0 V
V
(CL)DSS
Drain-source clamping voltage
I
D
= 10 mA
50
-
-
V
I
DM
= 4 A; t
p
≤
300
µ
s;
δ
≤
0.01
50
60
70
V
I
DSS
Drain source leakage current
V
DS
= 40 V
-
-
100
µ
A
T
mb
= 25˚C
-
0.1
10
µ
A
On-state
V
IS
≥
4.4 V; t
p
≤
300
µ
s;
δ
≤
0.01
R
DS(ON)
Drain-source resistance
I
DM
= 10 A
-
-
52
m
Ω
T
mb
= 25˚C
-
22
28
m
Ω
OVERLOAD CHARACTERISTICS
V
IS
= 5 V; T
mb
= 25˚C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Short circuit load
I
D
Drain current limiting
V
DS
= 13 V
28.5
43
57
A
4.4 V
≤
V
IS
≤
5.5 V;
21
-
65
A
-40˚C
≤
T
mb
≤
150˚C
Overload protection
P
D(TO)
Overload power threshold
device trips if P
D
> P
D(TO)
75
185
250
W
T
DSC
Characteristic time
which determines trip time
1
200
380
600
µ
s
Overtemperature protection
T
j(TO)
Threshold junction
150
170
-
˚C
temperature
2
1 Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈
T
DSC
/ ln[ P
D
/ P
D(TO)
].
2 This is independent of the dV/dt of input voltage V
IS
.
May 2001
3
Rev 1.000
