Panasonic Transistors 2SC3930G, Технические характеристики

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2SC3930G
2 SJC00357AED
This product complies with the RoHS Directive (EU 2002/95/EC).
I
B

V
BE
I
C

V
BE
V
CE(sat)

I
C
P
C

T
a
I
C

V
CE
I
C

I
B
h
FE

I
C
f
T

I
E
Z
rb

I
E
0 160 40 120 80
0
200
160
120
80
40
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
°
C)
0 18 6 12
0
12
10
8
6
4
2
T
a
=
25
°
C
I
B
=
100
µ
A
80
µ
A
60
µ
A
40
µ
A
20
µ
A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
0 100 80 20 60 40
0
15.0
12.5
10.0
7.5
5.0
2.5
V
CE
=
10 V
T
a
=
25
°
C
Base current I
B
(
µ
A)
Collector current I
C
(mA
)
0 1.0 0.8 0.2 0.6 0.4
0
120
100
80
60
40
20
V
CE
=
10 V
T
a
=
25
°
C
Base-emitter voltage V
BE
(V)
Base current I
B
(
µ
A
)
0 2.0 1.6 0.4 1.2 0.8
0
60
50
40
30
20
10
V
CE
=
10 V
T
a
=
75
°
C
−
25
°
C
25
°
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1 1 10 100
0.01
0.1
1
10
100
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
−
25
°
C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0.1 1 10 100
0
240
200
160
120
80
40
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
−
25
°
C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−
0.1
−
1
−
10
−
100
0
400
300
100
200
V
CB
=
10 V
f
=
100 MHz
T
a
=
25
°
C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
−
0.1
−
1
−
10
0
60
50
40
30
20
10
V
CB
=
10 V
f
=
2 MHz
T
a
=
25
°
C
Reverse transfer impedance Z
rb
(
Ω
)
Emitter current I
E
(mA)