Panasonic Transistors 2SC3930G, Технические характеристики

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2SC3930G
3 SJC00357AED
This product complies with the RoHS Directive (EU 2002/95/EC).
C
re

V
CE
G
P

I
E
NF

I
E
b
ie

g
ie
b
re

g
re
b
fe

g
fe
b
oe

g
oe
0.1 1 10 100
0
3.0
2.5
2.0
1.5
1.0
0.5
f
=
10.7 MHz
T
a
=
25
°
C
I
C
=
3 mA
1 mA
Collector-emitter voltage V
CE
(V)
Reverse transfer capacitance
C
re
(pF)
(Common emitter)
−
0.1
−
1
−
10
−
100
0
24
20
16
12
8
4
V
CE
=
10 V
f
=
100 MHz
T
a
=
25
°
C
Power gain G
P
(dB
)
Emitter current I
E
(mA)
−
0.1
−
1
−
10
0
12
10
8
6
4
2
V
CB
=
6 V
f
=
100 MHz
R
g
=
50
Ω
T
a
=
25
°
C
Noise figure NF
(dB
)
Emitter current I
E
(mA)
0 40 32 8 24 16
0
24
20
16
12
8
4
V
ie
=
g
ie
+ jb
ie
V
CE
=
10 V
f
=
10.7 MHz
I
E
=
−
1 mA
−
2 mA
−
4 mA
−
7 mA
58
100
Input conductance g
ie
(mS)
Input susceptance b
ie
(mS
)
−
0.5 0
−
0.1
−
0.4
−
0.2
−
0.3
−
0.6
0
−
0.1
−
0.2
−
0.3
−
0.4
−
0.5
y
re
=
g
re
+
jb
re
V
CE
=
10 V
f
=
10.7 MHz
I
E
= −
1 mA
58
100
Reverse transfer conductance g
re
(mS)
Reverse transfer susceptance b
re
(mS
)
0 100 80 20 60 40
−
120
0
−
20
−
40
−
60
−
80
−
100
y
fe
=
g
fe
+
jb
fe
V
CE
=
10 V
f
=
10.7 MHz
10.7
−
0.1 mA
−
1 mA
−
2 mA
I
E
= −
4 mA
100
100
100
58
58
58
Forward transfer conductance g
fe
(mS)
Forward transfer susceptance b
fe
(mS
)
0 0.5 0.4 0.1 0.3 0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
=
g
oe
+
jb
oe
V
CE
=
10 V
f
=
10.7 MHz
I
E
= −
1 mA
58
100
Output conductance g
oe
(mS)
Output susceptance b
oe
(mS
)