background image

Schottky Barrier Diodes (SBD)

1

Publication date: October 2003

SKH00132AED

MA2SD32

Silicon epitaxial planar type

For super high speed switching

Features

I

F(AV)

 = 200 mA rectification is possible.

Small reverse current: I

R

 

<

 5 

µ

A (at V

R

 = 30 V)

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

30

V

Repetitive peak reverse voltage

V

RRM

30

V

Forward current (Average)

I

F(AV)

200

mA

Peak forward current

I

FM

300

mA

Non-repetitive peak forward

I

FSM

1

A

surge current 

*

Junction temperature

T

j

125

°

C

Storage temperature

T

stg

55 to

 +

125

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current

I

R1

V

R

 

=

 10 V

0.5

µ

A

I

R2

V

R

 

=

 30 V

5

Forward voltage

V

F

I

F

 

=

 200 mA

0.49

0.56

V

Terminal capacitance

C

t

V

R

 

=

 0 V, f 

=

 1 MHz

25

pF

Reverse recovery time 

*

t

rr

I

F

 

=

 I

R

 

=

 100 mA

2

ns

I

rr

 

=

 10 mA, R

L

 

=

 100 

Electrical Characteristics

  T

a

 

=

 

25

°

±

 

3

°

C

Marking Symbol: 8H

Unit: mm

0.80

+0.05

–0.03

0.60

+0.05

–0.03

0.12

+0.05

–0.02

1.20

+0.05 –0.03

0

+0

–0.05

0.30

±

0.05

0.01

±

0.01

1.60

±

0.05

0.01

±

0.01

1

2

0.80

±

0.05

(0.80)

(0.60)

(0.15)

(0.60)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 250 MHz

4. *: t

rr

 measurement circuit

1: Anode
2: Cathode

SSMini2-F1 Package

Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

90%

t

p

 

=

 2 

µ

s

t

r

 

=

 0.35 ns

δ

 

=

 0.05

I

F

 

=

 100 mA

I

R

 

=

 100 mA

R

L

 

=

 100 

10%

Input Pulse

Output Pulse

I

rr

 

=

 10 mA

t

r

t

p

t

rr

I

F

t

t

Bias Application Unit (N-50BU)

Pulse Generator
(PG-10N)
R

s

 

=

 50 

Wave Form
Analyzer
(SAS-8130)
R

i

 

=

 50 

V

R

A

This product complies with the RoHS Directive (EU 2002/95/EC).

Отзывы: