Specifications
Specification
Value
■ Half-height, half-width, half-length, low-profile PCIe 3.0 board
Performance
†‡
Sequential Read/Write: Up to 2500/1500 MB/sec
Sequential Latency (typical) Read/Write: 20/20 μsec
Random Latency (typical) Read/Write: 120/30 μsec
Power On to Ready Latency (typical): 2 sec
IOPS
■ Random Read/Write 4KB 70/30: Up to 160,000
■ Random Read/Write 8KB 70/30: Up to 75,000
■ Random 4K Read: Up to 440,000
■ Random 4K Write: Up to 70,000
■ Random 8K Read: Up to 260,000
■ Random 8K Write: Up to 42,000
■ Random Read/Write Consistency 4K/8K: 90%
Components
■ High Endurance Intel
®
20nm eMLC NAND Flash Memory
■ Intel
®
Flash Memory NVMe Controller ASIC
Reliability
■ Uncorrectable Bit Error Rate (UBER): 1 sector per 10
17
bits read
■ Mean Time Between Failure (MTBF): 2 million hours
■ T10 DIF protection
“Reliability Specifications” on page 18
Power
■ 3.3V and 12V supply rail
■ Active/Idle (typical): Up to 25W/4W (typical)
■ Enhanced power-loss data protection
“Electrical Specifications” on page 17
Certifications and declarations
UL, CE, C-Tick, BSMI, KCC, Microsoft WHQL, VCCI
Compliance
For compliance specifications, refer to the Oracle Flash Accelerator F160
PCIe Card Safety and Compliance Guide.
■ NVM Express 1.0c
■ PCI Express Base Specification Rev 3.0
■ Enterprise SSD Form Factor Version 1.0a
■ PCI Express Card Electro-Mechanical (CEM) Specification Rev 2.0
Endurance rating
■ Up to 14 PBW (petabytes written)
■ 5 Drive Writes/day (JESD219 workload)
Altitude (simulated)
■ Operating: -1,000 to 10,000 ft
■ Non-Operating: -1,000 to 40,000 ft
Temperature
■ Operating:
■ 0 to 55° C ambient, with specified airflow out of server through PCIe
Card Slot
■ Temperature monitoring (In-band and by way of SMBUS)
Product Overview
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