ON Semiconductor NTB30N20 Скачать руководство пользователя страница 6

NTB30N20

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6

SAFE OPERATING AREA

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

r(t)

, EFFECTIVE 

TRANSIENT

 THERMAL

 RESIST

ANCE

(NORMALIZED)

t, TIME (

m

s)

0.1

1.0

0.01

0.1

0.2

0.02

D = 0.5

0.05

0.01

SINGLE PULSE

R

q

JC

(t) = r(t) R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

 − T

C

 = P

(pk)

 R

q

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t

1

/t

2

1.0

10

0.1

0.01

0.001

0.0001

0.00001

T

J

, STARTING JUNCTION TEMPERATURE (

°

C)

E AS

, SINGLE PULSE DRAIN−T

O−SOURC

E

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

0.1

1.0

100

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 13. Thermal Response

1

1000

A

V

ALANCHE ENERGY

 (mJ)

I D

, DRAIN CURRENT

 (AMPS)

R

DS(on)

 LIMIT

THERMAL LIMIT
PACKAGE LIMIT

0.1

0

25

50

75

100

125

200

10

10

175

Figure 14. Diode Reverse Recovery Waveform

di/dt

t

rr

t

a

t

p

I

S

0.25 I

S

TIME

I

S

t

b

100

400

300

500

1000

100

V

GS

 = 20 V 

SINGLE PULSE
T

C

 = 25

°

C

1 ms

100 

m

s

10 ms

dc

10 

m

s

I

D

 = 30 A

150

Содержание NTB30N20

Страница 1: ...RG 25 W EAS 450 mJ Thermal Resistance Junction to Case Junction to Ambient Junction to Ambient Note 1 RqJC RqJA RqJA 0 7 62 5 50 C W Maximum Lead Temperature for Soldering Purposes for 10 seconds TL...

Страница 2: ...tance VDS 15 Vdc ID 15 Adc gFS 20 Mhos DYNAMIC CHARACTERISTICS Input Capacitance VDS 25 Vdc VGS 0 Vdc f 1 0 MHz Ciss 2335 pF Output Capacitance VDS 25 Vdc VGS 0 Vdc f 1 0 MHz VDS 160 Vdc VGS 0 Vdc f 1...

Страница 3: ...6 0 05 0 0 1 Figure 5 On Resistance Variation with Temperature TJ JUNCTION TEMPERATURE C 3 2 1 5 1 0 5 175 125 100 75 50 25 0 25 50 VDS DRAIN TO SOURCE VOLTAGE VOLTS 40 20 1000 100 10 0 100000 Figure...

Страница 4: ...t a voltage corresponding to the on state when calculating td off At high switching speeds parasitic circuit elements complicate the analysis The inductance of the MOSFET source lead inside the packag...

Страница 5: ...ermal Resistance General Data and Its Use Switching between the off state and the on state may traverse any load line provided neither rated peak current IDM nor rated voltage VDSS is exceeded and the...

Страница 6: ...0 10 0 1 0 01 0 001 0 0001 0 00001 TJ STARTING JUNCTION TEMPERATURE C E AS SINGLE PULSE DRAIN TO SOURCE Figure 12 Maximum Avalanche Energy versus Starting Junction Temperature 0 1 1 0 100 VDS DRAIN T...

Страница 7: ...45 0 055 1 14 1 40 B M B W W NOTES 1 DIMENSIONING AND TOLERANCING PER ANSI Y14 5M 1982 2 CONTROLLING DIMENSION INCH 3 418B 01 THRU 418B 03 OBSOLETE NEW STANDARD 418B 04 F 0 310 0 350 7 87 8 89 L 0 052...

Страница 8: ...product could create a situation where personal injury or death may occur Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application Buyer shall indemnify and hol...

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