ON Semiconductor EZAIRO 7160 SL, Руководство пользователя

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EZAIRO 7160 SL HYBRID
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5
Table 2. ELECTRICAL SPECIFICATIONS
Description Screened Units Max Typ Min Conditions Symbol
INPUT STAGE
Input impedance R
IN
Non − 0dB preamplifier gains 370 500 725 k W n
Input referred noise IN
IRN
AIR connected to AGND
Unweighted, 100 Hz to
10 kHz BW
Preamplifier settings:
m
Vrms
0 dB − 53 −
12 dB − 13 −
15 dB − 9 −
18 dB − 6.6 10.6
n
21 dB − 4.9 −
24 dB − 4.3 −
27 dB − 3.7 −
30 dB − 3.2 −
33 dB − 3.2 −
36 dB − 3.2 −
Input Dynamic Range
(Note 7)
IN
DR
AIR connected to AGND
Unweighted, 100 Hz to
10 kHz BW
Preamplifier settings:
dB
0 dB − 86 −
12 dB − 86 −
15 dB − 86 −
18 dB 81 86 − n
21 dB − 85 −
24 dB − 82 −
27 dB − 82 −
30 dB − 80 −
33 dB − 77 −
36 dB − 74 −
Input peak THD+N IN
THD+N
Gain between 0 and 30 dB,
− 10 dBFS signal, 1 kHz
− − − 68 dB n
Input peak THD+N IN
THD+N
Gain between 33 and 36 dB,
− 10 dBFS signal, 1 kHz.
− − − 66 dB
OUTPUT DRIVER
Maximum peak current I
DO
High Power mode − − 25 mA
Output impedance R
DO
Normal mode, Iload = 1 mA − 4.5 5.5 W
Output impedance R
DO
High Power mode − 2.5 4
W
Output dynamic range DO
DR
Normal mode, VBAT = 1.25 V 90 − − dB
Output THD+N DO
THDN
At 1 kHz, − 6 dBFS, 8 kHz
bandwidth, VBAT = 1.25 V,
normal mode
− − 78 − 76 dB
10 − BIT LOW − SPEED A/D
Input voltage range LSAD
RANGE
Peak input voltage 0 − 1.94 V n
INL LSAD
INL
From GND to 2*VREG − 4 − +4 LSB
DNL LSAD
DNL
From GND to 2*VREG − 2 − +2 LSB
Sampling frequency LSAD
SF
All channels sequentially − 12.8 − kHz
Channel sampling frequency LSAD
CH_SF
− 1.6 − kHz