LPC5411x
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© NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet
Rev. 2.1 — 9 May 2018
63 of 105
NXP Semiconductors
LPC5411x
32-bit ARM Cortex-M4/M0+ microcontroller
11. Dynamic characteristics
11.1 Flash memory
[1]
Typical ratings are not guaranteed.
[2]
Number of erase/program cycles.
[3]
Programming times are given for writing 256 bytes from RAM to the flash.
11.2 I/O pins
[1]
Simulated data.
Table 21.
Flash characteristics
T
amb
=
40
C to +105
C, unless otherwise specified. 1.62 V
V
DD
3.6 V unless otherwise
specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
N
endu
endurance sector
erase/program
10000
-
-
cycles
page erase/program; page
in a sector
1000
-
-
cycles
t
ret
retention time powered
10
-
-
years
unpowered
10
-
-
years
t
er
erase time
page, sector, or multiple
consecutive sectors
-
100
-
ms
t
prog
programming
time
-
1
-
ms
Table 22.
Dynamic characteristic: I/O pins
T
amb
=
40
C to +85
C unless otherwise specified; 1.62 V
V
DD
3.6 V unless otherwise
specified.
Symbol
Parameter Conditions
Min
Typ
Max
Unit
Standard I/O pins - normal drive strength
t
r
rise time
pin configured as output; SLEW = 1 (fast
mode);
2.7 V
V
DD
3.6 V
1.0
-
2.5
ns
1.62 V
V
DD
1.98 V
1.6
-
3.8
ns
t
f
fall time
pin configured as output; SLEW = 1 (fast
mode);
2.7 V
V
DD
3.6 V
0.9
-
2.5
ns
1.62 V
V
DD
1.98 V
1.7
-
4.1
ns
t
r
rise time
pin configured as output; SLEW = 0
(standard mode);
2.7 V
V
DD
3.6 V
1.9
-
4.3
ns
1.62 V
V
DD
1.98 V
2.9
-
7.8
ns
t
f
fall time
pin configured as output; SLEW = 0
(standard mode);
2.7 V
V
DD
3.6 V
1.9
-
4.0
ns
1.62 V
V
DD
1.98 V
2.7
-
6.7
ns
t
r
rise time
pin configured as input
0.3
-
1.3
ns
t
f
fall time
pin configured as input
0.2
-
1.2
ns