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2001 Nov 01

8

 

NXP Semiconductors

Product specification

860 MHz, 21.5 dB gain power doubler 
amplifier

BGD906; BGD906MI

PACKAGE OUTLINE

UNIT

A2

max.

c

e

e1

q

Q

max.

q1

q2

U2

U1

W

 REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

 IEC

 JEDEC

 JEITA

mm

20.8

9.5

0.51
0.38

0.25 27.2

2.04
2.54

13.75 2.54 5.08 12.7 8.8

4.15
3.85

2.4

38.1 25.4 10.2 4.2

44.75
44.25

8.2
7.8

0.25

0.1

3.8

b

F

p

6-32

UNC

y

w

0.7

x

S

DIMENSIONS (mm are the original dimensions)

 SOT115J

0

5

10 mm

scale

A

max.

D

max.

L

min.

E

max.

Z

max.

Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads

SOT115J

D

U1

q

q2

q1

b

F

S

A

Z

p

E

A2

L

c

d

Q

U2

M

w

7

8

9

2

3

W

e

e1

5

p

1

d

x

M

B

y

M

B

B

04-02-04
10-06-18

y

M

B

Содержание BGD906

Страница 1: ...DATA SHEET Product specification Supersedes data of 2000 Mar 28 2001 Nov 01 DISCRETE SEMICONDUCTORS BGD906 BGD906MI 860 MHz 21 5 dB gain power doubler amplifier dbook halfpage M3D252...

Страница 2: ...re electrically identical only the pinning is different PINNING SOT115J PIN DESCRIPTION BGD906 BGD906MI 1 input output 2 3 common common 5 VB VB 7 8 common common 9 output input Fig 1 Simplified outli...

Страница 3: ...0 MHz 20 23 dB f 320 to 550 MHz 19 22 dB f 550 to 650 MHz 18 24 dB f 650 to 750 MHz 17 23 dB f 750 to 900 MHz 16 21 dB s21 phase response f 50 MHz 45 45 deg CTB composite triple beat 49 chs flat Vo 47...

Страница 4: ...0 MHz 4 5 5 dB f 750 MHz 5 6 dB f 900 MHz 6 7 5 dB Itot total current consumption DC note 9 405 420 435 mA SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Notes 1 Tilt 9 dB 50 to 550 MHz tilt 3 5 dB at 6...

Страница 5: ...handbook halfpage 0 Vo dBmV f MHz Xmod dB 200 50 60 80 90 70 52 48 40 36 44 400 600 800 MGS662 1 1 3 2 4 3 2 4 Fig 3 Cross modulation as a function of frequency under tilted conditions 1 Vo 2 Typ 3 Z...

Страница 6: ...860 MHz 3 Typ 4 Typ 3 handbook halfpage 0 Vo dBmV f MHz Xmod dB 200 1000 50 60 80 90 70 52 48 40 36 44 400 600 800 MGS665 3 1 2 4 Fig 6 Cross modulation as a function of frequency under tilted conditi...

Страница 7: ...50 70 40 60 50 55 MGS667 3 2 1 Fig 8 Composite triple beat as a function of output voltage 1 Typ 3 2 Typ 3 Typ 3 ZS ZL 75 VB 24 V 129 chs fm 859 25 MHz handbook halfpage 40 Vo dBmV CSO dB 45 20 30 50...

Страница 8: ...4 13 75 2 54 5 08 12 7 8 8 4 15 3 85 2 4 38 1 25 4 10 2 4 2 44 75 44 25 8 2 7 8 0 25 0 1 3 8 b F p 6 32 UNC y w 0 7 x S DIMENSIONS mm are the original dimensions SOT115J 0 5 10 mm scale A max D max L...

Страница 9: ...n specifications and product descriptions at any time and without notice This document supersedes and replaces all information supplied prior to the publication hereof Suitability for use NXP Semicond...

Страница 10: ...pyrights patents or other industrial or intellectual property rights Export control This document as well as the item s described herein may be subject to export control regulations Export might requi...

Страница 11: ...document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence o...

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