NXP Semiconductors BGD906, Техническое описание

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2001 Nov 01 7
NXP Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler
amplifier
BGD906; BGD906MI
handbook, halfpage
40
Vo (dBmV)
CTB
(dB)
45
−
20
−
30
−
50
−
70
−
40
−
60
50 55
MGS667
(3)
(2)
(1)
Fig.8 Composite triple beat as a function of output
voltage.
(1) Typ. +3
σ
.
(2) Typ.
(3) Typ.
−
3
σ
.
Z
S
= Z
L
= 75
Ω
; V
B
= 24 V; 129 chs; f
m
= 859.25 MHz.
handbook, halfpage
40
Vo (dBmV)
CSO
(dB)
45
−
20
−
30
−
50
−
70
−
40
−
60
50 55
MGS668
(3)
(2)
(1)
Fig.9 Composite second order distortion as a
function of output voltage.
(1) Typ. +3
σ
.
(2) Typ.
(3) Typ.
−
3
σ
.
Z
S
= Z
L
= 75
Ω
; V
B
= 24 V; 129 chs; f
m
= 860.5 MHz.