2001 Nov 01
5
NXP Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler
amplifier
BGD906; BGD906MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
−
50
−
60
−
80
−
90
−
70
52
48
40
36
44
400
600
800
MGS661
(1)
(1)
(2)
(3)
(4)
(2)
(4)
(3)
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
(1) V
o
.
(2) Typ. +3
σ
.
Z
S
= Z
L
= 75
Ω
; V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−
6 dB offset (550 to 750 MHz).
(3) Typ.
(4) Typ.
−
3
σ
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
−
50
−
60
−
80
−
90
−
70
52
48
40
36
44
400
600
800
MGS662
(1)
(1)
(3)
(2)
(4)
(3)
(2)
(4)
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
(1) V
o
.
(2) Typ. +3
σ
.
Z
S
= Z
L
= 75
Ω
; V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−
6 dB offset (550 to 750 MHz).
(3) Typ.
(4) Typ.
−
3
σ
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
−
50
−
60
−
80
−
90
−
70
52
48
40
36
44
400
600
800
MGS663
(1)
(1)
(2)
(2)
(3)
(4)
(3)
(4)
Fig.4
Composite second order distortion as a
function of frequency under tilted
conditions.
(1) V
o
.
(2) Typ. +3
σ
.
Z
S
= Z
L
= 75
Ω
; V
B
= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
−
6 dB offset (550 to 750 MHz).
(3) Typ.
(4) Typ.
−
3
σ
.
