NXP Semiconductors BGD814, Техническое описание

Страница: 6 / 10

2001 Nov 01 6
NXP Semiconductors Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−
40
−
50
−
70
−
80
−
60
52
48
40
36
44
400 600 800
MLD348
(1)
(2)
(3)
(4)
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
Z
S
= Z
L
= 75

; V
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3

.
(3) Typ.
(4) Typ.

3

.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−
40
−
50
−
70
−
80
−
60
52
48
40
36
44
400 600 800
MLD349
(1)
(2)
(3)
(4)
Fig.6 Cross modulation as a function of frequency
under tilted conditions.
Z
S
= Z
L
= 75

; V
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3

.
(3) Typ.
(4) Typ.

3

.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−
50
−
60
−
80
−
90
−
70
52
48
40
36
44
400 600 800
MLD350
(1)
(2)
(3)
(4)
Fig.7 Composite second order distortion as a
function of frequency under tilted conditions.
Z
S
= Z
L
= 75

; V
B
= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) V
o
.
(2) Typ. +3

.
(3) Typ.
(4) Typ.

3

.