NXP Semiconductors BGD814, Техническое описание

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2001 Nov 01 4
NXP Semiconductors Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. f
p
= 55.25 MHz; V
p
= 44 dBmV; f
q
= 805.25 MHz; V
q
= 44 dBmV; measured at f
p
+ f
q
= 860.5 MHz.
5. Measured according to DIN45004B: f
p
= 851.25 MHz; V
p
= V
o
; f
q
= 858.25 MHz; V
q
= V
o

6 dB; f
r
= 860.25 MHz;
V
r
= V
o

6 dB; measured at f
p
+ f
q

f
r
= 849.25 MHz.
6. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 35 V.
CSO composite second
order distortion 79 chs flat; V
o
= 44 dBmV; f
m
= 548.5 MHz
  
68 dB
112 chs flat; V
o
= 44 dBmV; f
m
= 746.5 MHz
  
61 dB
132 chs flat; V
o
= 44 dBmV; f
m
= 860.5 MHz
  
57 dB
112 chs; f
m
= 210 MHz; V
o
= 50.2 dBmV at
745 MHz; note 2
  
56 dB
79 chs; f
m
= 210 MHz; V
o
= 47.3 dBmV at
547 MHz; note 3
  
64 dB
d
2
second order distortion note 4
  
69 dB
V
o
output voltage d
im
=

60 dB; note 5 64
 
dBmV
CTB compression = 1 dB; 132 chs flat;
f = 859.25 MHz 48
 
dBmV
CSO compression = 1 dB; 132 chs flat;
f = 860.5 MHz 50
 
dBmV
NF noise figure f = 50 MHz
 
5.5 dB
f = 550 MHz
 
5.5 dB
f = 750 MHz
 
6.5 dB
f = 870 MHz
 
7.5 dB
I
tot
total current
consumption (DC) note 6 380 395 410 mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT