NXP Semiconductors BGD814, Техническое описание

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2001 Nov 01 3
NXP Semiconductors Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD814
CHARACTERISTICS
Bandwidth 40 to 870 MHz; V
B
= 24 V; T
mb
= 35

C; Z
S
= Z
L
= 75

.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 45 MHz 19.7

20.3 dB
f = 870 MHz 20.5

21.5 dB
SL slope straight line f = 45 to 870 MHz; note 1 0.5

1.5 dB
FL flatness straight line f = 45 to 100 MHz
  
0.25 dB
f = 100 to 800 MHz
  
0.5 dB
f = 800 to 870 MHz

0.4

0.1 dB
s
11
input return losses f = 45 to 80 MHz 25
 
dB
f = 80 to 160 MHz 22
 
dB
f = 160 to 320 MHz 19
 
dB
f = 320 to 550 MHz 17
 
dB
f = 550 to 650 MHz 17
 
dB
f = 650 to 750 MHz 16
 
dB
f = 750 to 870 MHz 15
 
dB
f = 870 to 914 MHz 12
 
dB
s
22
output return losses f = 45 to 80 MHz 24
 
dB
f = 80 to 160 MHz 22
 
dB
f = 160 to 320 MHz 17
 
dB
f = 320 to 550 MHz 18
 
dB
f = 550 to 650 MHz 16
 
dB
f = 650 to 750 MHz 15
 
dB
f = 750 to 870 MHz 15
 
dB
f = 870 to 914 MHz 13
 
dB
s
21
phase response f = 50 MHz

45

+45 deg
CTB composite triple beat 79 chs flat; V
o
= 44 dBmV; f
m
= 547.25 MHz
  
66 dB
112 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz
  
60.5 dB
132 chs flat; V
o
= 44 dBmV; f
m
= 859.25 MHz
  
56 dB
112 chs; f
m
= 547.25 MHz; V
o
= 50.2 dBmV at
745 MHz; note 2
  
55.5 dB
79 chs; f
m
= 331.25 MHz; V
o
= 47.3 dBmV at
547 MHz; note 3
  
65 dB
X
mod
cross modulation 79 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
  
66 dB
112 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
  
62.5 dB
132 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
  
61 dB
112 chs; f
m
= 745.25 MHz; V
o
= 50.2 dBmV at
745 MHz; note 2
  
57 dB
79 chs; f
m
= 445.25 MHz; V
o
= 47.3 dBmV at
547 MHz; note 3
  
66 dB