NXP Semiconductors BGD712, Техническое описание

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2001 Nov 02 5
NXP Semiconductors Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD712
handbook, halfpage
200 0 400 800 600
MCD842
f (MHz)
CTB
(dB)
−
50
−
60
−
80
−
90
−
70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
(1) V
o
.
(2) Typ. +3

.
Z
S
= Z
L
= 75

; V
B
= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ.

3

.
handbook, halfpage
200 0 400 800 600
MCD843
f (MHz)
Xmod
(dB)
−
50
−
60
−
80
−
90
−
70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
(1) V
o
.
(2) Typ. +3

.
Z
S
= Z
L
= 75

; V
B
= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ.

3

.
handbook, halfpage
200 0 400 800 600
MCD844
f (MHz)
CSO
(dB)
−
50
−
60
−
80
−
90
−
70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.4 Composite second order distortion as a
function of frequency under tilted
conditions.
(1) V
o
.
(2) Typ. +3

.
Z
S
= Z
L
= 75

; V
B
= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ.

3

.