2001 Nov 02
2
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD712
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2, 3
common
5
+V
B
7, 8
common
9
output
handbook, halfpage
7
8
9
2
3
5
1
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 45 MHz
18.2
18.8
dB
f = 750 MHz
19
20
dB
I
tot
total current consumption (DC)
V
B
= 24 V
380
410
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
B
supply voltage
30
V
V
i
RF input voltage
70
dBmV
T
stg
storage temperature
40
+100
C
T
mb
operating mounting base temperature
20
+100
C
