NXP Semiconductors BGD712, Техническое описание

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2001 Nov 02 3
NXP Semiconductors Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD712
CHARACTERISTICS
Bandwidth 40 to 750 MHz; V
B
= 24 V; T
mb
= 35

C; Z
S
= Z
L
= 75

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 45 MHz 18.2 18.5 18.8 dB
f = 750 MHz 19 19.5 20 dB
SL slope straight line f = 45 to 750 MHz; note 1 0.5 1 1.5 dB
FL flatness straight line f = 45 to 100 MHz
  
0.35 dB
f = 100 to 700 MHz
  
0.5 dB
f = 700 to 750 MHz
  
0.15 dB
S
11
input return losses f = 45 to 80 MHz 23
 
dB
f = 80 to 160 MHz 23
 
dB
f = 160 to 320 MHz 21
 
dB
f = 320 to 550 MHz 20
 
dB
f = 550 to 650 MHz 20
 
dB
f = 650 to 750 MHz 19
 
dB
f = 750 to 790 MHz 17
 
dB
S
22
output return losses f = 45 to 80 MHz 23
 
dB
f = 80 to 160 MHz 23
 
dB
f = 160 to 320 MHz 20
 
dB
f = 320 to 550 MHz 20
 
dB
f = 550 to 650 MHz 19
 
dB
f = 650 to 750 MHz 19
 
dB
f = 750 to 790 MHz 17
 
dB
S
21
phase response f = 50 MHz

45

+45 deg
CTB composite triple beat 112 channels flat; V
o
= 44 dBmV;
f
m
= 745.25 MHz
  
62 dB
79 channels flat; V
o
= 44 dBmV;
f
m
= 547.25 MHz
  
68 dB
79 channels; f
m
= 445.25 MHz;
V
o
= 49.3 dBmV at 547 MHz; note 2
  
63 dB
X
mod
cross modulation 112 channels flat; V
o
= 44 dBmV;
f
m
= 55.25 MHz
  
63 dB
79 channels flat; V
o
= 44 dBmV;
f
m
= 55.25 MHz
  
69 dB
79 channels; f
m
= 745.25 MHz;
V
o
= 49.3 dBmV at 547 MHz; note 2
  
60 dB