µ
PD754144, 754244
63
Data Sheet U10040EJ2V1DS
•
µ
PD754244
EEPROM Characteristics (T
A
= –40 to +85
°
C, V
DD
= 1.8 to 6.0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
EEPROM
I
EEW
4.19 MHz,
V
DD
= 5.0 V
±
10%
4.5
15
mA
write current
crystal oscillation
V
DD
= 3.0 V
±
10%
2.0
6
mA
EEPROM
t
EEW
3.8
10.0
ms
write time
EEPROM
EEWT
T
A
= –40 to +70
°
C
100000
times/byte
write times
T
A
= –40 to +85
°
C
80000
times/byte
Comparator Characteristics (T
A
= –40 to +85
°
C, V
DD
= 1.8 to 6.0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Comparison accuracy
V
ACOMP
±
100
mV
Threshold voltage
V
TH
Note
Note
V
PTH input voltage
V
IPTH
0
V
DD
V
AV
REF
input voltage
V
IAVREF
1.8
V
DD
V
Comparator circuit
I
DD5
When bit 7 of PTHM is set to 1
1
mA
current consumption
Note
The threshold voltage becomes as follows by settings bits 0 to 3 of PTHM.
V
TH
= V
IAVREF
x (n + 0.5)/16 (n = 0 to 15)
*