CHAPTER 20 ELECTRICAL SPECIFICATIONS (TARGET VALUES)
Preliminary User’s Manual U16898EJ1V0UD
292
Flash Memory Programming Characteristics (T
A
= –10
°
C to +70
°
C, 2.7 V
≤
V
DD
≤
5.5 V, V
SS
= 0 V)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Chip unit
t
eraca
T.B.D
T.B.D ms
Erase time
Note 1
Sector unit
t
erasa
T.B.D
T.B.D ms
Write time
t
wrwa
T.B.D
T.B.D
µ
s
Number of rewrites per chip
C
erwr
1 erase + 1 write after erase = 1 rewrite
Note 2
100
Times
Notes 1. The erase verify time is not included.
2. When a product is first written after shipment, “erase
→
write” and “write only” are both taken as one
rewrite.
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