Device User Guide — 9S12C128DGV1/D V01.05
93
Table A-8 Supply Current Characteristics for MC9S12C32
Conditions are shown in Table A-4 with internal regulator enabled unless otherwise noted
Num
C
Rating
Symbol
Min
Typ
Max
Unit
1
P
Run Supply Current Single Chip
I
DD5
35
mA
2
P
P
C
Wait Supply current
All modules enabled
VDDR<4.9V, only RTI enabled
(2)
VDDR>4.9V, only RTI enabled
I
DDW
3.5
2.5
30
8
mA
3
C
P
C
P
C
P
C
P
Pseudo Stop Current (RTI and COP disabled)
(2)(3)
-40
°
C
27
°
C
85
°
C
"C" Temp Option 100˚C
105
°
C
"V" Temp Option 120˚C
125
°
C
"M" Temp Option 140
°
C
I
DDPS
1
NOTES
:
1. STOP current measured in production test at increased junction temperature, hence for Temp Option "C" the test is
carried out at 100˚C although the Temperature specification is 85˚C. Similarly for "v" and "M" options the temperature
used in test lies 15˚C above the temperature option specification.
340
360
500
550
590
720
780
1100
450
1450
1900
4500
µ
A
4
C
C
C
C
C
Pseudo Stop Current (RTI and COP enabled)
2 3
-40
°
C
27
°
C
85
°
C
105
°
C
125
°
C
2. PLL off
3. At those low power dissipation levels T
J
= T
A
can be assumed
I
DDPS
1
540
700
750
880
1300
µ
A
5
C
P
C
P
C
P
C
P
Stop Current
(3)
-40
°
C
27
°
C
85
°
C
"C" Temp Option 100˚C
105
°
C
"V" Temp Option 120˚C
125
°
C
"M" Temp Option 140
°
C
I
DDS
(1)
10
20
100
140
170
300
350
520
80
1000
1400
4000
µ
A
Содержание MC9S12C Series
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