Device User Guide — 9S12C128DGV1/D V01.05
87
NOTE:
Instead of specifying ambient temperature all parameters are specified for the more
meaningful silicon junction temperature. For power dissipation calculations refer
to Section A.1.8 Power Dissipation and Thermal Characteristics.
A.1.8 Power Dissipation and Thermal Characteristics
Power dissipation and thermal characteristics are closely related. The user must assure that the maximum
operating junction temperature is not exceeded. The average chip-junction temperature (T
J
) in
°
C can be
obtained from:
The total power dissipation can be calculated from:
Table A-4 Operating Conditions
Rating
Symbol
Min
Typ
Max
Unit
I/O, Regulator and Analog Supply Voltage
V
DD5
2.97
5
5.5
V
Digital Logic Supply Voltage
1
NOTES
:
1. The device contains an internal voltage regulator to generate the logic and PLL supply out of the I/O supply. The
absolute maximum ratings apply when this regulator is disabled and the device is powered from an external
source.
V
DD
2.35
2.5
2.75
V
PLL Supply Voltage
(1)
V
DDPLL
2.35
2.5
2.75
V
Voltage Difference VDDX to VDDA
∆
VDDX
-0.1
0
0.1
V
Voltage Difference VSSX to VSSR and VSSA
∆
VSSX
-0.1
0
0.1
V
Oscillator
f
osc
0.5
-
16
MHz
Bus Frequency
f
bus
2
2. Some blocks e.g. ATD (conversion) and NVMs (program/erase) require higher bus frequencies for proper oper-
ation.
0.25
-
25
MHz
Operating Junction Temperature Range
T
J
-40
-
140
°
C
T
J
T
A
P
D
Θ
JA
•
(
)
+
=
T
J
Junction Temperature, [
°
C
]
=
T
A
Ambient Temperature, [
°
C
]
=
P
D
Total Chip Power Dissipation, [W]
=
Θ
JA
Package Thermal Resistance, [
°
C/W]
=
P
D
P
INT
P
IO
+
=
P
INT
Chip Internal Power Dissipation, [W]
=
Содержание MC9S12C Series
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