3. TECHNICAL BRIEF
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3.5.3 UMTS Power Amplifier (U1005, U1007)
The AWT6277 (AWT6307) meets the increasing demands for higher output power in UMTS handsets.
The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm®
6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize
efficiency for different output power levels, and a shutdown mode with low leakage current, increase
handset talk and standby time.
The self-contained 4 mm x 4 mm x 1.1 mm surface mount package incorporates matching networks
optimized for output power, efficiency, and linearity in a 50 Ω system.
3.5.4 Thermistor (R1029)
This thermistor senses temperature variations around UMTS PA to adjust PA gain deviation for assure
compliance with the applicable transmit power control standards. Negative temperature compensation
thermistor is used in the L602i.
Figure1.5.3-1 UMTS PA functional block diagram
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Содержание L602i
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Страница 34: ...3 TECHNICAL BRIEF 35 3 7 Hardware Architecture Figure Simplified Block Diagram Z 3 X B O X C O M ...
Страница 46: ...3 TECHNICAL BRIEF 47 Figure PM6650 2 Functional Block Diagram Z 3 X B O X C O M ...
Страница 71: ...4 TROUBLE SHOOTING 72 4 2 SIGNAL PATH WCDMA Tx PATH WCDMA Rx PATH Z 3 X B O X C O M ...
Страница 83: ...4 TROUBLE SHOOTING 84 4 5 5 Check RF Rx Level TP1 TP3 TP4 Bias1 TP2 Z 3 X B O X C O M ...
Страница 101: ...4 TROUBLE SHOOTING 102 LCD Control data flow Z 3 X B O X C O M ...
Страница 109: ...4 TROUBLE SHOOTING 110 AUDIO AMP R502 C501 R503 FP500 501 CN600 PIN 14 15 Speaker Soldering Point Z 3 X B O X C O M ...
Страница 113: ...4 TROUBLE SHOOTING 114 Z 3 X B O X C O M ...
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Страница 130: ...5 DOWNLOAD 131 Click on X button to use another function Z 3 X B O X C O M ...
Страница 134: ...6 BLOCK DIAGRAM 135 Table 2 1 1 RF Block Component Z 3 X B O X C O M ...
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