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Infineon IDP2303, Руководство по конструкции

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Design guide IDP2303(A) 

  

Introduction 

 

 

 

Application Note 

5 

Revision 2.0  

 

 

2017-05-03 

 

 

Symbol 

Pin 

Type 

Function 

VS 

6 

I 

Voltage sensing 
Pin VS is connected to a high ohmic resistor divider for directly sensing the bus 
voltage. 

N.C. 

7 

— 

Creepage distance 

HV 

8 

I 

High voltage input 
Pin HV is connected to the AC input via an external resistor and 2 diodes. There is 
a 600 V HV startup-cell internally connected that is used for initial VCC charge. It 
is also used to discharge the x-capacitors of the EMI network. Furthermore 
sampled high voltage sensing is supported for brownin/brownout detection. 

MFIO 
(UART for 
IDP2303A) 

9 

I 

MFIO  
Pin MFIO provides a half duplex UART communication IO interface for parameter 
configuration. It also can be used for PFC output redundant over voltage 
protection.   
UART  
Pin UART provides a half duplex UART communication IO interface for parameter 
configuration and AC voltage detection. 

HBFB 

10 

I 

Half bridge feedback 
Pin HBFB is connected to an optocoupler for the feedback path to control the 
LLC switching frequency. 

CS1 
(HBCS) 

11 

I 

Current sense 1 (half bridge current sense) 
Pin CS1 is connected to an external shunt resistor and the source of the 
PowerMOS in the half-bridge stage. 

GD1 
(LSGD) 

12 

O 

Gate driver output 1 (half bridge low side gate driver) 
Output for directly driving the lowside PowerMOS in the half-bridge. The peak 
source current capability is 120 mA and the peak sink current capability is 500 
mA. 

N.C. 

13 

— 

Creepage distance 

HSGND 

14 

G 

High side ground 
Ground for floating high side driver 

HSVCC 

15 

P 

High side VCC 
Power supply of the high side floating driver, supplied via bootstrap 

HSGD 

16 

O 

High side floating gate driver 
Output for directly driving the high side PowerMOS in the half-bridge. The peak 
source current capability is 0.52 A and the peak sink current capability is 1.3 A.  

 

2.3

 

Product highlights 

 

Integrated 600 V startup cell  

 

Integrated floating driver based on coreless transformer technology 

 

Digital multi-mode operation for higher efficiency  

 

Supports low standby power by means of  a direct X-cap discharge function and advanced burst mode 
control 

 

Eliminates the auxiliary power supply by means of anintegrated startup cell and burst mode  

 

UART interface for communication and in-circuit configuration 

 

Flexible design-in by means of one time programming capability for a wide range of parameters 

Содержание IDP2303

Страница 1: ...Introduction 4 2 1 IC Introduction 4 2 2 Pin configuration and description 4 2 3 Product highlights 5 2 4 Application 6 3 PFC design 7 3 1 Target specifications 7 3 2 Power stage 7 3 2 1 Bridge rectif...

Страница 2: ...heavy load 32 4 3 2 Current sense and OCP 32 4 3 3 Dead time 33 4 3 4 LLC model and regulation loop 33 4 3 4 1 LLC small signal model 33 4 3 4 2 VCO modeling 33 4 3 4 3 LLC regulation loop 34 5 Genera...

Страница 3: ...l as the settings for parameters associated with general functions and protection features Useful tips on PCB layout are included to help the customers optimize their PCB design Lastly the installatio...

Страница 4: ...rameters that help to ease the design in phase of the project 1 2 2 2 Pin configuration and description The pin configuration is shown in Figure 1 and Table 1 Figure 1 Pin configuration Table 1 Pin de...

Страница 5: ...ridge current sense Pin CS1 is connected to an external shunt resistor and the source of the PowerMOS in the half bridge stage GD1 LSGD 12 O Gate driver output 1 half bridge low side gate driver Outpu...

Страница 6: ...GND HV VAC ZCD VS CS0 Configuration HBFB Vout_2 MFIO Vout_1 STANDBY GD0 GD1 Figure 2 Typical application circuit for a power supply with IDP2303 HSGND HSVCC HSGD GD1 IDP2303A VCC GND 85 265 VAC CS1 Z...

Страница 7: ...at 90 VAC sys 87 Estimated efficiency of PFC at 90 VAC PFC 93 Estimated efficiency of PFC at 265 VAC PFC_265 96 Minimum switching frequency fsw_min 25 kHz Power factor 0 9 3 2 Power stage A simplified...

Страница 8: ...characteristics With the CE in 500 V E6 and P6 family in 600 V Infineon offers various series with extremely low conduction and switching losses that can make switching applications more efficient mor...

Страница 9: ...plications Vgate_high up to VCC possible rail to rail operation Figure 5 Gate drive concept 3 2 3 2 Gate drive stability Due to the unique gate drive with configurable charge current and regulated gat...

Страница 10: ...atively slow for better EMI performance Apart from the gate drive resistance itself 10 k resistors R5 and R6 are also commonly connected between MOSFET gate and source to help damping some overshoot a...

Страница 11: ...the frequency law or when the ZCD signal is too weak to be detected within 40 us The second condition will not affect the design of inductor Figure 7 illustrates the inductor current and timing durin...

Страница 12: ...mum current defined by OCP and not become saturated Otherwise a large current will result from the saturation and potentially damage devices if it is present for some time 3 3 Control parameters and p...

Страница 13: ...ode operation If the average sensed PFC bus voltage falls below a configurable UVP threshold for a blanking time then PFC under voltage is detected As a result PFC and LLC will stop switching immediat...

Страница 14: ...IC is always active and the PFC and or LLC switch continuously so the voltage divider is always in circuit However the conduction loss is only a very small portion of the total loss With the IDP2303...

Страница 15: ...voltage Thus the clamping current can be calculated as Negative clamping current _ _ Positive clamping current _ _ _ For example with a turn ratio of 8 diode forward voltage drop of 0 7V each and mini...

Страница 16: ...g edge 1 2 V range tCSOCP1 20 320 620 ns 1 input signal slope dVCS dt 10 mV s 2 90 170 250 ns 1 input signal slope dVCS dt 150 mV s 2 90 140 210 ns 1 input signal slope dVCS dt 300 mV s 2 1 Not tested...

Страница 17: ...esign guide IDP2303 A PFC design Application Note 17 Revision 2 0 2017 05 03 A spradsheet based calculation example for selecting the current sense resistor and the OCP tolerance is shown in Figure 12...

Страница 18: ...Design guide IDP2303 A PFC design Application Note 18 Revision 2 0 2017 05 03 Figure 12 Accurate calculation of OCP tolerance...

Страница 19: ...6 7 200 39 99 0 34 This value is less than the saturation magnetic flux density B of 0 35 T PC40 magnetic material Therefore the PFC choke will not saturate under worst case conditions 3 3 5 Frequenc...

Страница 20: ...tw t t Figure 13 Current and timing in QR2 operation 3 3 5 2 Frequency law A frequency law consisting of a maximum switching frequency and the minimum switching frequency is defined for the valley se...

Страница 21: ...the switching frequency must increase by reducing the QRN When the switching frequency reaches the maximum frequency the frequency law defines that the frequency is too high and switching frequency mu...

Страница 22: ...unt resistor as shown in Figure 15 The internal shunt resistor RHV shunt set to 125 internal 500 series resistor and the external RHV resistors to save design effort a value of 51k with 1 tolerance is...

Страница 23: ..._24 3 5 A Output voltage Vo_12 12 V Output current Io_12 3 A Output power Po_LLC 120 W LLC efficiency LLC 93 Resonant frequency fr 100 kHz Hold up time thold 20 ms 4 2 Power stage A simplified applica...

Страница 24: ...turns ratio is less than the physical turns ratio due to the leakage inductance in the transformer secondary The equivalent turns ratio can be estimated as where 1 is the ratio between the primary in...

Страница 25: ...t in Figure 18 that can be derived with the First Harmonic Approximation FHA modelling methodology Figure 18 Equivalent circuit If the total output load is referred to 24 V the effective load resistan...

Страница 26: ...ign must be re calculated as 1 2 0 74 1 2 2 1 2 100 103 2 10 10 9 253 1 1 The value of can be achieved by adjusting the gap length From the gain curve with 0 74 in Figure 19 the normalized frequency 0...

Страница 27: ...is selected to avoid magnetic saturation Then can be calculated at minimum bus voltage _ by 2 7 5 24 0 5 2 87 10 3 88 10 6 0 62 20 The selection of the number of turns on the primary side must also ta...

Страница 28: ...ct on the shape of gain curves and the attainable maximum gain Larger values of result in flatter gain curves which leads to a wider operation frequency range In the real world the selection of is als...

Страница 29: ...d as below The maximum drain current through the MOSFET is the same as that through the resonant capacitor 2_ _ 0 89 2_ 2 0 892 2 5 1 98 2 5 is the on state resistance of MOSFET at junction temperatur...

Страница 30: ...requency fHB based on the average LLC feedback voltage VHBFB With a DPdigital controller a VCO curve based on switching period can be easily implemented digitally The curve of the LLC switching period...

Страница 31: ...ined by the hardware configuration For example the IDP230x IO pullup voltage range is 0 3 3 V and the ADC range is 0 2 4 V thus the full VCO range should be within 0 2 4 V 4 3 1 2 _ and _ The frequenc...

Страница 32: ...uctance and 3 5 for the resonant capacitance Additional equivalent voltage drops caused by the transformer winding and PCB traces will affect the actual voltage gain Usually the transformer internal v...

Страница 33: ...ns During the LLC converter s switching dead time the magnetizing current charges or discharges the switching node to achieve ZVS The relevant capacitance at the switch node is the sum of the transist...

Страница 34: ...he LLC regulation loop is based on external analog circuits and is controlled by the TL431 regulation network The configuration is shown in Figure 22 below Figure 22 Analog control loop configuration...

Страница 35: ...ction is 0 1 1 1 1 0 1 0 0 2 1 2 1 1 1 There are 2 zeros 2 poles and an origin pole some of which are coupled to each other The resistance and capacitance are also limited by the physical circuit cons...

Страница 36: ...up cell depletion MOS normally on device is switched on during the VCC startup phase when the IC is inactive A current flows from the HV pin to the VCC pin via an internal diode which charges the capa...

Страница 37: ...es active and before the LLC starts to supply the VCC voltage To meet the first criteria _ 90_ 1 20 5 90 2 2 51 7 1 20 5 1 57 1 20 5 76 51 0 7 51 7 The value of VCC_ON can be found in the datasheet is...

Страница 38: ...HV pin occurs the AC voltage may be at a much lower value then the Y capacitor will be discharged through all possible discharge paths and thus causes spikes in the touch current This spike current ma...

Страница 39: ...one bit of 0 the following first byte can be read which indicates the state of the gearbox usually protection information Figure 25 Example of black box function OCP1 As an example the digital informa...

Страница 40: ...CC GND current sense GND MOSFET diode heatsink and EMI return GND shall all be star connected to the PFC bulk capacitor ground directly and the PCB traces should be as short as possible The second gro...

Страница 41: ...ZCD pin and IC GND pin This trace shall be kept far away from the LLC high side driver circuit including the high side GND pin to avoid high dv dt coupling The two PCB traces from the PFC choke auxil...

Страница 42: ...s possible so that the radiated EMI noise can be effectively reduced 6 7 Passing 4 kV lightning surge test To pass the 4 kV lightning surge test PCB spark gaps or spark gap devices across the input co...

Страница 43: ...possible mutual interference the HBFB and PFC ZCD signal related PCB traces shall not be close or in parallel to the HV pin related PCB traces and LLC main current loop Any PCB track carrying a high c...

Страница 44: ..._addon_generator msi file 3 Step 2 above will copy and paste documents images parameters to C Users Login Infineon Technologies AG dp vision 4 Connect the dpIFGen2 interface board using the USB cable...

Страница 45: ...uld turn green Figure 35 Power device On Off button and device status 9 Press the Test configuration set button so that parameter values are loaded into the IDP230x sample and application firmware sta...

Страница 46: ...t break time 2 s t_VCCOVP VCC OVP blanking time 9 ms Table 9 PFC parameters Parameter symbol Parameter description Pin Default Range Unit V_GD0H 1 PFC GD0 drive voltage GD0 10 5 4 5 15 V I_GD0H 1 PFC...

Страница 47: ...FB 2 0 1 2 3 V V_HLVCO LLC VCO heavy load voltage HBFB 2 0 1 2 3 V V_LLVCO LLC VCO light load voltage HBFB 0 45 0 1 2 3 V f_MaxVCO LLC VCO max frequency 250 1 300 kHz f_LLVCO LLC VCO light load freque...

Страница 48: ...Slope_TCO_min LLC min slope during soft start 0 36 0 0157 3 984 s 0 5 ms N_burst_sstart LLC soft start steps 4 1 218 N_burst_sstop LLC soft stop steps 4 1 218 T_burst_on_max 160 us Slope_burst_leave...

Страница 49: ...21 3 Infineon Technologies CrCM Boost PFC Converter Design Design Note DN 2013 10 V1 0 January 2013 4 Infineon Technologies Primary Side MOSFET Selection for LLC Topology Application note V1 0 June 2...

Страница 50: ...ect to such application For further information on the product technology delivery terms and conditions and prices please contact your nearest Infineon Technologies office www infineon com WARNINGS Du...

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