Infineon CoolGaN IGI60F1414A1L, Руководство пользователя, Страница: 14 / 27

Application Note 14 of 27 V 1.0
2021-04-30
CoolGaN™ IPS half-bridge evaluation board with IGI60F1414A1L
Setup and use
The circuit is connected per Figure 10 , using a 1.1mH RF inductor. The input voltage is ramped up to 400 V, and
the output voltage is about 145 V (36 percent duty-cycle). The load is set to 98 ohm, about 200 W output power.
Figure 15 shows V
DS
of the high and low-side GaN transistors with the inductor current. Note that both the gate
and drain voltages are clean with minimal ringing or overshoot even though the switching speed is fast.
Temperature of the chipset and heatsink can be monitored in real-time using a FLIR infrared camera. Figure 17
shows the thermal image of the hardware in the buck testing condition without any thermal relief or heatsink.
IPS chipset operates around 100°C (below the recommended operating temperature Tj< 125°C).
Figure 15 Operating waveforms buck-mode at 100 kHz, 200 W load
Figure 16 Expanded view of the operating waveforms in buck-mode at 100 kHz, 200 W load