Document Number: 002-10634 Rev. *J
Page
242 of 307
S6J3350 Series
9.1.6
FLASH Memory
9.1.6.1
Electrical Characteristics
Parameter
Rating
Unit
Remarks
Min
Typ
Max
Sector erase time
-
120
180
ms
Large sector
*1
Internal preprogramming time included
-
120
180
ms
8kB sector
*1
Internal preprogramming time included
-
120
180
ms
4kB sector
*2
Internal preprogramming time included
16bit write time(Program)
-
30
60
µs
System-level overhead time excluded
*1
32bit write time(Program)
-
30
60
µs
System-level overhead time excluded
*1
64bit write time(Program)
-
30
60
µs
System-level overhead time excluded
*1
256bit write time(Program)
-
40
70
µs
System-level overhead time excluded
*1
Page mode write time(Program)
-
320
600
µs
System-level overhead time excluded
*1
32bit write time(Work)
-
30
60
µs
System-level overhead time excluded
*2
Erase count /
Data retention time(Program)
1,000/20
years
-
-
-
Temperature at write/erase time
Average temperature T
A
= +85 degrees
Celsius
Erase count /
Data retention time(Work)
1,000/20
years
10,000/10
years
100,000/5
years
-
-
-
Temperature at write/erase time
Average temperature T
A
= +85 degrees
Celsius
*1: Guaranteed value for up to 1,000 erases
*2: Guaranteed value for up to 100,000 erases
9.1.6.2
Notes
While the Flash memory is written or erased, shutdown of the external power (Vcc5) is prohibited.
In the application system where Vcc5 might be shut down while writing or erasing, be sure to turn the power off by using an
external voltage detection function.
To put it concretely, after the external power supply voltage falls below the detection voltage (V
DL
), hold Vcc5 at 2.7V or more within
the duration calculated by the following expression:
Td
*1
[μs] + ( 1 / F
CRF
*2
[MHz] ) x 1029 + 25 [μs]
*1: See "
9.1.4.11 Low Voltage Detection (External Voltage)
*2: See "