Electronic Component Distributor. Source::Freescale Semiconductor
P.N:MPC8349CZUAGDB Desc:IC MPU POWERQUICC II PRO 672TBGA
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MPC8349EA PowerQUICC II Pro Integrated Host Processor Hardware Specifications, Rev. 13
Freescale Semiconductor
15
DDR and DDR2 SDRAM
Table 11
lists the PLL and DLL lock times.
6
DDR and DDR2 SDRAM
This section describes the DC and AC electrical specifications for the DDR SDRAM interface of the
MPC8349EA. Note that DDR SDRAM is GV
DD
(typ) = 2.5 V and DDR2 SDRAM is GV
DD
(typ) = 1.8 V.
The AC electrical specifications are the same for DDR and DRR2 SDRAM.
NOTE
The information in this document is accurate for revision 3.0 silicon and
later. For information on revision 1.1 silicon and earlier versions see the
MPC8349E PowerQUICC II Pro Integrated Host Processor Hardware
Specifications.
See
Section 22.1, “Part Numbers Fully Addressed by This
Document
,” for silicon revision level determination.
6.1
DDR and DDR2 SDRAM DC Electrical Characteristics
Table 12
provides the recommended operating conditions for the DDR2 SDRAM component(s) of the
MPC8349EA when GV
DD
(typ) = 1.8 V
.
Table 11. PLL and DLL Lock Times
Parameter/Condition
Min
Max
Unit
Notes
PLL lock times
—
100
μ
s
—
DLL lock times
7680
122,880
csb_clk cycles
1, 2
Notes:
1. DLL lock times are a function of the ratio between the output clock and the coherency system bus clock (csb_clk). A 2:1 ratio
results in the minimum and an 8:1 ratio results in the maximum.
2. The csb_clk is determined by the CLKIN and system PLL ratio. See
Section 19, “Clocking.”
Table 12. DDR2 SDRAM DC Electrical Characteristics for GV
DD
(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GV
DD
1.71
1.89
V
1
I/O reference voltage
MV
REF
0.49
×
GV
DD
0.51
×
GV
DD
V
2
I/O termination voltage
V
TT
MV
REF
– 0.04
MV
REF
+ 0.04
V
3
Input high voltage
V
IH
MV
REF
+ 0.125
GV
DD
+ 0.3
V
—
Input low voltage
V
IL
–0.3
MV
REF
– 0.125
V
—
Output leakage current
I
OZ
–9.9
9.9
μ
A
4
Output high current (V
OUT
= 1.420 V)
I
OH
–13.4
—
mA
—
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