Hitachi 55293DLB, Руководство по обслуживанию

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10. 16M-BIT [16M X 1] CMOS SERIAL FLASH EEPROM
MX25L1602 MSTAR SPI FLASH
Key Features
■ HIGH DENSITY NAND FLASH MEMORIES
General

16,777,216 x 1 bit structure

256 Equal Sectors with 8K-byte each
o
Any sector can be erased

4096 Equal Segments with 512-byte each
o
Provides sequential output within any segment

Single Power Supply Operation
o
3.0 to 3.6 volt for read, erase, and program operations

Latch-up protected to 100mA from -1V to Vcc +1V

Low Vcc write inhibit is equal to or less than 2.5V
Performance

High Performance
o
Fast access time: 20MHz serial clock (50pF + 1TTL Load)
o
Fast program time: 5ms/page (typical, 128-byte per page)
o
Fast erase time: 300ms/sector (typical, 8K-byte per sector)

Low Power Consumption
o
Low active read current: 10mA (typical) at 17MHz
o
Low active programming current: 10mA (typical)
o
Low active erase current: 10mA (typical)
o
Low standby current: 30uA (typical, CMOS)

Minimum 100,000 erase/program cycle
Software Features

Input Data Format
o
1-byte Command code, 3-byte address, 1-byte byte address

512-byte Sequential Read Operation

Built in 9-bit (A0 to A8) pre-settable address counter to support the 512-byte sequential read operation

Auto Erase and Auto Program Algorithm
o
Automatically erases and verifies data at selected sector
o
Automatically programs and verifies data at selected page by an internal algroithm that automatically
times the program pulse widths (Any page to be programed should have page in the erased state first)

Status Register Feature
o
Provides detection of program and erase operation completion.
o
Provides auto erase/ program error report
Hardware Features

SCLK Input
o
Serial clock input