Hitachi 32LD8600, Руководство по обслуживанию

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12
TFT TV Service Manual
11.9.3. Pin Descriptions
11.10. GAL16LV8
11.10.1. Description
The GAL16LV8D, at 3.5 ns maximum propagation delay time, provides the highest speed performance
available in the PLD market. The GAL16LV8C can interface with both 3.3V and 5Vsignal levels. The
GAL16LV8 is manufactured using Lattice Semiconductor's advanced 3.3V E
2
CMOS process, which
combines CMOS with Electrically Erasable (E
2
) floating gate technology. High speed erase times
(<100ms) allow the devices to be reprogrammed quickly and efficiently.
The 3.3V GAL16LV8 uses the same industry standard 16V8 architecture as its 5V counterpart and
supports all architectural features such as combinatorial or registered macrocell operations.
Unique test circuitry and reprogrammable cells allow complete AC, DC, and functional testing during
manufacture. As a result, Lattice Semiconductor delivers 100% field programmability and functionality
of all GAL products. In addition, 100 erase/write cycles and data retention in excess of 20 years are
specified.
11.10.2. Features
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
- 3.5 ns Maximum Propagation Delay
- Fmax = 250 MHz
- 2.5 ns Maximum from Clock Input to Data Output
- UltraMOS® Advanced CMOS Technology
• 3.3V LOW VOLTAGE 16V8 ARCHITECTURE
- JEDEC-Compatible 3.3V Interface Standard
- 5V Compatible Inputs
- I/O Interfaces with Standard 5V TTL Devices (GAL16LV8C)
• ACTIVE PULL-UPS ON ALL PINS (GAL16LV8D Only)
• E2 CELL TECHNOLOGY
- Reconfigurable Logic
- Reprogrammable Cells
- 100% Tested/100% Yields
- High Speed Electrical Erasure (<100ms)
- 20 Year Data Retention
• EIGHT OUTPUT LOGIC MACROCELLS
- Maximum Flexibility for Complex Logic Designs
- Programmable Output Polarity