Harman Kardon MAS 101, Руководство по обслуживанию

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©2000 Fairchild Semiconductor International Rev. A, February 2000
TI
P32 Ser
ie
s(TIP3
2/3
2A
/32B/
32C)
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW
≤
300
µ
s, Duty Cycle
≤
2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP32
: TIP32A
: TIP32B
: TIP32C
- 40
- 60
- 80
- 100
V
V
V
V
V
CEO
Collector-Emitter Voltage : TIP32
: TIP32A
: TIP32B
: TIP32C
- 40
- 60
- 80
-100
V
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 3 A
I
CP
Collector Current (Pulse) - 5 A
I
B
Base Current - 3 A
P
C
Collector Dissipation (T
C
=25
°
C) 40 W
P
C
Collector Dissipation (T
a
=25
°
C) 2 W
T
J
Junction Temperature 150
°
C
T
STG
Storage Temperature - 65 ~ 150
°
C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: TIP32
: TIP32A
: TIP32B
: TIP32C I
C
= - 30mA, I
B
= 0 -40
-60
-80
-100
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP32/32A
: TIP32B/32C V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
- 0.3
- 0.3 mA
mA
I
CES
Collector Cut-off Current
: TIP32
: TIP32A
: TIP32B
: TIP32C V
CE
= - 40V, V
EB
= 0
V
CE
= - 60V, V
EB
= 0
V
CE
= - 80V, V
EB
= 0
V
CE
= - 100V, V
CE
= 0
- 200
- 200
- 200
- 200
µ
A
µ
A
µ
A
µ
A
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 1 mA
h
FE
* DC Current Gain V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
25
10
50
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 3A, I
B
= - 375mA - 1.2 V
V
BE
(sat) * Base-Emitter Saturation Voltage V
CE
= - 4V, I
C
= - 3A - 1.8 V
f
T
Current Gain Bandwidth Product V
CE
= - 10V, I
C
= - 500mA 3.0 MHz
TIP32 Series(TIP32/32A/32B/32C)
Medium Power Linear Switching Applications
• Complement to TIP31/31A/31B/31C
1.Base 2.Collector 3.Emitter
1
TO-220
40