Harman Kardon MAS 101, Руководство по обслуживанию

Страница: 11 / 60

DMP3020LSS
Document number: DS31263 Rev. 4 - 2 www.diodes.com
May 2008
© Diodes Incorporated
DMP3020LSS
N
EW P
RO
D
U
C
T
SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• 14m
Ω
@ V
GS
= -10V
• 25m
Ω
@ V
GS
= -4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 2)
•
"Green" Device (Note 4)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072g (approximate)
SOP-8L
S
D
D
G
D
D
S
S
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
± 20 V
Drain Current (Note 1) Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-12
-6
A
Pulsed Drain Current (Note 3) I
DM
-40 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1) P
D
2.5 W
Thermal Resistance, Junction to Ambient
R
θ
JA
50 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-30
⎯ ⎯
V
V
GS
= 0V, I
D
= -250 μ A
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1
μ A V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ± 100 nA V
GS
= ± 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
GS(th)
-1 ⎯ -2 V V
DS
= V
GS
, I
D
= -250 μ A
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
11.6
18.6
14
25
m Ω
V
GS
= -10V, I
D
= -8A
V
GS
= -4.5V, I
D
= -5A
Forward Transconductance g
fs
⎯ 12 ⎯ S V
DS
= -10V, I
D
= -12A
Diode Forward Voltage (Note 5) V
SD
-0.5 ⎯ -1.1 V V
GS
= 0V, I
S
= -2A
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
⎯ 1655 ⎯ pF
Output Capacitance C
oss
⎯
286
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
240
⎯
pF
V
DS
= -20V, V
GS
= 0V
f = 1.0MHz
Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB with R
θ JA
= 50°C/W.
2. No purposefully added lead.
3. Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
9