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2N5551 / MMBT5551 — NPN Ge
neral Purpose Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. B1
June 2009
2N5551 / MMBT5551
NPN General Purpose Amplifier
Features
• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
• Suffix “-Y” means h
FE
180~240 in 2N5551 (Test condition : I
C
= 10mA, V
CE
= 5.0V)
Absolute Maximum Ratings *
T
A
= 25 ° C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A
=25 ° C unless otherwise noted
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 160 V
V
CBO
Collector-Base Voltage 180 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector current - Continuous 600 mA
T
J
, T
stg
Junction and Storage Temperature -55 to +150 ° C
Symbol Parameter
Max
Units
2N5551 *MMBT5551
P
D
Total Device Dissipation
Derate above 25 ° C
625
5.0
350
2.8
mW
mW/ ° C
R
θ JC
Thermal Resistance, Junction to Case 83.3 ° C/W
R
θ JA
Thermal Resistance, Junction to Ambient 200 357 ° C/W
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
Marking: 3S
TO-92
2N5551 MMBT5551
34